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场效应晶体管（FETs）、MOSFETs

制造商	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
Alpha & Omega Semiconductor Inc. Analog Power Inc. ANBON SEMICONDUCTOR (INT'L) LIMITED APSEMI Bruckewell Cambridge GaN Devices Central Semiconductor Corp Coherent Corp Comchip Technology CoolCAD Diodes Incorporated Diotec Semiconductor EPC EPC Space, LLC EVVO Fairchild Semiconductor Fairchild/ON Semiconductor fastSiC Flip Electronics GaNPower GeneSiC Semiconductor Goford Semiconductor Good-Ark Semiconductor Harris Corporation Honeywell Aerospace HY Electronic (Cayman) Limited IceMOS Technology Infineon Technologies International Rectifier Intersil Inventchip IXYS IXYS Integrated Circuits Division Linear Integrated Systems, Inc. Littelfuse Inc. MaxLinear, Inc. MDD Meritek Micro Commercial Co Microchip Technology Microsemi Corporation Motorola National Semiconductor NEC Corporation Nexperia USA Inc. NextGen Components Group NoMIS Power NovuSem Nuvoton Technology Corporation NXP Semiconductors onsemi Panasonic - BSG Panjit International Inc. PN Junction Semiconductor Qorvo Quest Semi Rectron USA Renesas ROHM Semiconductor Sanken Electric USA Inc. Sanyo SemiQ Shenzhen Slkormicro Semicon Co., Ltd. Siemens Siliconix Skyworks Solutions Inc. SMC Diode Solutions SparkFun Electronics STMicroelectronics Taiwan Semiconductor Corporation Texas Instruments Torex Semiconductor Ltd Toshiba Semiconductor and Storage Transphorm TT Electronics/Optek Technology UMW Venkel Vicor Corporation Vishay Vishay General Semiconductor - Diodes Division Vishay Siliconix WeEn Semiconductors Wise-Integration Wolfspeed, Inc. YAGEO XSemi

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厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
HUF75852G3 MOSFET N-CH 150V 75A TO247-3 onsemi	15	-	询价单	数据表	UltraFET™	TO-247-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	75A (Tc)	10V	16mOhm @ 75A, 10V	Through Hole	4V @ 250µA	480 nC @ 20 V	150 V	±20V	7690 pF @ 25 V	-	-	TO-247-3	-	500W (Tc)	-55°C ~ 175°C (TJ)
SCT4062KRHRC15 1200V, 26A, 4-PIN THD, TRENCH-ST Rohm Semiconductor	401	-	询价单	数据表	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	26A (Tc)	18V	81mOhm @ 12A, 18V	Through Hole	4.8V @ 6.45mA	64 nC @ 18 V	1200 V	+21V, -4V	1498 pF @ 800 V	AEC-Q101	-	TO-247-4L	Automotive	115W	175°C (TJ)
SCT3080AW7TL SICFET N-CH 650V 29A TO263-7 Rohm Semiconductor	905	-	询价单	数据表	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	29A (Tc)	-	104mOhm @ 10A, 18V	Surface Mount	5.6V @ 5mA	48 nC @ 18 V	650 V	+22V, -4V	571 pF @ 500 V	-	-	TO-263-7	-	125W	175°C (TJ)
NTBG060N090SC1 SIC MOS N-CH 900V 5.8A D2PAK-7 onsemi	786	-	询价单	数据表	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	5.8A (Ta), 44A (Tc)	15V	84mOhm @ 20A, 15V	Surface Mount	4.3V @ 5mA	88 nC @ 15 V	900 V	+19V, -10V	1800 pF @ 450 V	-	-	D2PAK-7	-	3.6W (Ta), 211W (Tc)	-55°C ~ 175°C (TJ)
TW083N65C,S1F G3 650V SIC-MOSFET TO-247 83MOH Toshiba Semiconductor and Storage	142	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	30A (Tc)	18V	113mOhm @ 15A, 18V	Through Hole	5V @ 600µA	28 nC @ 18 V	650 V	+25V, -10V	873 pF @ 400 V	-	-	TO-247	-	111W (Tc)	175°C
IXFT100N30X3HV MOSFET N-CH 300V 100A TO268HV Littelfuse Inc.	550	-	询价单	数据表	HiPerFET™, Ultra X3	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100A (Tc)	10V	13.5mOhm @ 50A, 10V	Surface Mount	4.5V @ 4mA	122 nC @ 10 V	300 V	±20V	7660 pF @ 25 V	-	-	TO-268HV (IXFT)	-	480W (Tc)	-55°C ~ 150°C (TJ)
S2M0080120D MOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions	211	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	41A (Tc)	20V	100mOhm @ 20A, 20V	Through Hole	4V @ 10mA	54 nC @ 20 V	1200 V	+25V, -10V	1324 pF @ 1000 V	-	-	TO-247AD	-	231W (Tc)	-55°C ~ 175°C (TJ)
NTHL033N65S3HF MOSFET N-CH 650V 70A TO247-3 onsemi	402	-	询价单	数据表	FRFET®, SuperFET® III	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	70A (Tc)	10V	33mOhm @ 35A, 10V	Through Hole	5V @ 2.5mA	188 nC @ 10 V	650 V	±30V	6720 pF @ 400 V	-	-	TO-247-3	-	500W (Tc)	-55°C ~ 150°C (TJ)
IXFH54N65X3 MOSFET 54A 650V X3 TO247 Littelfuse Inc.	300	-	询价单	数据表	HiPerFET™, Ultra X3	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	54A (Tc)	10V	59mOhm @ 27A, 10V	Through Hole	5.2V @ 4mA	49 nC @ 10 V	650 V	±20V	3360 pF @ 25 V	-	-	TO-247 (IXFH)	-	625W (Tc)	-55°C ~ 150°C (TJ)
IXFX180N25T MOSFET N-CH 250V 180A PLUS247-3 Littelfuse Inc.	509	-	询价单	数据表	HiPerFET™, Trench	TO-247-3 Variant	Tube	Active	N-Channel	MOSFET (Metal Oxide)	180A (Tc)	10V	12.9mOhm @ 60A, 10V	Through Hole	5V @ 8mA	345 nC @ 10 V	250 V	±20V	28000 pF @ 25 V	-	-	PLUS247™-3	-	1390W (Tc)	-55°C ~ 150°C (TJ)
SIHP5N50D-E3 MOSFET N-CH 500V 5.3A TO220AB Vishay Siliconix	7,221	-	询价单	数据表	-	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	5.3A (Tc)	10V	1.5Ohm @ 2.5A, 10V	Through Hole	5V @ 250µA	20 nC @ 10 V	500 V	±30V	325 pF @ 100 V	-	-	TO-220AB	-	104W (Tc)	-55°C ~ 150°C (TJ)
NTB18N06LT4 MOSFET N-CH 60V 15A D2PAK onsemi	5,700	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	15A (Tc)	5V	100mOhm @ 7.5A, 5V	Surface Mount	2V @ 250µA	20 nC @ 5 V	60 V	±10V	440 pF @ 25 V	-	-	D2PAK	-	48.4W (Tc)	-55°C ~ 175°C (TJ)
NTB18N06L MOSFET N-CH 60V 15A D2PAK onsemi	4,838	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	15A (Tc)	5V	100mOhm @ 7.5A, 5V	Surface Mount	2V @ 250µA	20 nC @ 5 V	60 V	±10V	440 pF @ 25 V	-	-	D2PAK	-	48.4W (Tc)	-55°C ~ 175°C (TJ)
SIHS90N65E-GE3 E SERIES POWER MOSFET SUPER-247, Vishay Siliconix	233	-	询价单	数据表	E	TO-274AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	87A (Tc)	10V	29mOhm @ 45A, 10V	Through Hole	4V @ 250µA	591 nC @ 10 V	650 V	±30V	11826 pF @ 100 V	-	-	SUPER-247™ (TO-274AA)	-	625W (Tc)	-55°C ~ 150°C (TJ)
S2M0080120K MOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions	260	-	询价单	数据表	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	41A (Tc)	20V	100mOhm @ 20A, 20V	Through Hole	4V @ 10mA	54 nC @ 20 V	1200 V	+25V, -10V	1324 pF @ 1000 V	-	-	TO-247-4	-	231W (Tc)	-55°C ~ 175°C (TJ)
IMZA65R030M1HXKSA1 SILICON CARBIDE MOSFET, PG-TO247 Infineon Technologies	144	-	询价单	数据表	CoolSiC™	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	53A (Tc)	18V	42mOhm @ 29.5A, 18V	Through Hole	5.7V @ 8.8mA	48 nC @ 18 V	650 V	+20V, -2V	1643 pF @ 400 V	-	-	PG-TO247-4-3	-	197W (Tc)	-55°C ~ 175°C (TJ)
SCT2280KEHRC11 1200V, 14A, THD, SILICON-CARBIDE Rohm Semiconductor	410	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	14A (Tc)	18V	364mOhm @ 4A, 18V	Through Hole	4V @ 1.4mA	36 nC @ 400 V	1200 V	+22V, -6V	667 pF @ 800 V	AEC-Q101	-	TO-247N	Automotive	108W (Tc)	175°C (TJ)
FCH041N65EF-F155 MOSFET N-CH 650V 76A TO247 onsemi	358	-	询价单	数据表	FRFET®, SuperFET® II	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	76A (Tc)	10V	41mOhm @ 38A, 10V	Through Hole	5V @ 7.6mA	298 nC @ 10 V	650 V	±20V	12560 pF @ 100 V	-	-	TO-247-3	-	595W (Tc)	-55°C ~ 150°C (TJ)
NTH4L040N65S3F MOSFET N-CH 650V 65A TO247-4 onsemi	310	-	询价单	数据表	FRFET®, SuperFET® III	TO-247-4	Tube	Active	N-Channel	MOSFET (Metal Oxide)	65A (Tc)	10V	40mOhm @ 32.5A, 10V	Through Hole	5V @ 2.1mA	158 nC @ 10 V	650 V	±30V	5940 pF @ 400 V	-	-	TO-247-4L	-	446W (Tc)	-55°C ~ 150°C (TJ)
IXTH6N120 MOSFET N-CH 1200V 6A TO247 Littelfuse Inc.	1,160	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	6A (Tc)	10V	2.6Ohm @ 3A, 10V	Through Hole	5V @ 250µA	56 nC @ 10 V	1200 V	±20V	1950 pF @ 25 V	-	-	TO-247 (IXTH)	-	300W (Tc)	-55°C ~ 150°C (TJ)

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