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| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)（最大值） | 电压 - 正向 (Vf)（最大值）@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流（Io） | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
HER153G B0GDIODE GEN PURP 200V 1.5A DO204AC Taiwan Semiconductor Corporation |
3,448 | - |
|
数据表 |
- | DO-204AC, DO-15, Axial | Bulk | Active | Standard | 200 V | 1 V @ 1.5 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 5 µA @ 200 V | 35pF @ 4V, 1MHz | 1.5A | - | - | Through Hole | DO-204AC (DO-15) | -55°C ~ 150°C |
|
|
HER156G B0GDIODE GEN PURP 600V 1.5A DO204AC Taiwan Semiconductor Corporation |
3,913 | - |
|
数据表 |
- | DO-204AC, DO-15, Axial | Bulk | Active | Standard | 600 V | 1 V @ 1.5 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 5 µA @ 600 V | 20pF @ 4V, 1MHz | 1.5A | - | - | Through Hole | DO-204AC (DO-15) | -55°C ~ 150°C |
|
|
HER208G B0GDIODE GEN PURP 2A DO204AC Taiwan Semiconductor Corporation |
7,220 | - |
|
数据表 |
- | DO-204AC, DO-15, Axial | Bulk | Discontinued at Digi-Key | Standard | 1000 V | 1.7 V @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 5 µA @ 1000 V | 20pF @ 4V, 1MHz | 2A | - | - | Through Hole | DO-204AC (DO-15) | -55°C ~ 150°C |
|
HER302G B0GDIODE GEN PURP 100V 3A DO201AD Taiwan Semiconductor Corporation |
6,363 | - |
|
数据表 |
- | DO-201AD, Axial | Bulk | Active | Standard | 100 V | 1 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 10 µA @ 100 V | 60pF @ 4V, 1MHz | 3A | - | - | Through Hole | DO-201AD | -55°C ~ 150°C |
|
|
HER308G B0GDIODE GEN PURP 3A DO201AD Taiwan Semiconductor Corporation |
8,157 | - |
|
数据表 |
- | DO-201AD, Axial | Bulk | Active | Standard | 1000 V | 1.7 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 10 µA @ 1000 V | 35pF @ 4V, 1MHz | 3A | - | - | Through Hole | DO-201AD | -55°C ~ 150°C |
|
HER602G B0GDIODE GEN PURP 100V 6A R-6 Taiwan Semiconductor Corporation |
3,693 | - |
|
数据表 |
- | R-6, Axial | Bulk | Discontinued at Digi-Key | Standard | 100 V | 1 V @ 6 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 10 µA @ 100 V | 80pF @ 4V, 1MHz | 6A | - | - | Through Hole | R-6 | -55°C ~ 150°C |
|
|
HER605G B0GDIODE GEN PURP 400V 6A R-6 Taiwan Semiconductor Corporation |
7,995 | - |
|
数据表 |
- | R-6, Axial | Bulk | Active | Standard | 400 V | 1.3 V @ 6 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 10 µA @ 400 V | 80pF @ 4V, 1MHz | 6A | - | - | Through Hole | R-6 | -55°C ~ 150°C |
|
|
MUR420HB0GDIODE GEN PURP 200V 4A DO201AD Taiwan Semiconductor Corporation |
2,898 | - |
|
数据表 |
- | DO-201AD, Axial | Bulk | Active | Standard | 200 V | 890 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 5 µA @ 200 V | 65pF @ 4V, 1MHz | 4A | Automotive | AEC-Q101 | Through Hole | DO-201AD | -55°C ~ 175°C |
|
|
MUR440 B0GDIODE GEN PURP 400V 4A DO201AD Taiwan Semiconductor Corporation |
4,504 | - |
|
数据表 |
- | DO-201AD, Axial | Bulk | Active | Standard | 400 V | 1.28 V @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 10 µA @ 400 V | 65pF @ 4V, 1MHz | 4A | - | - | Through Hole | DO-201AD | -55°C ~ 175°C |
|
|
MUR460 B0GDIODE GEN PURP 600V 4A DO201AD Taiwan Semiconductor Corporation |
3,827 | - |
|
数据表 |
- | DO-201AD, Axial | Bulk | Discontinued at Digi-Key | Standard | 600 V | 1.28 V @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 10 µA @ 600 V | 65pF @ 4V, 1MHz | 4A | - | - | Through Hole | DO-201AD | -55°C ~ 175°C |
