Taiwan Semiconductor Corporation|单个二极管 - 页 309

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	技术	电压 - 直流反向 (Vr)（最大值）	电压 - 正向 (Vf)（最大值）@ If	速度	反向恢复时间 (trr)	电流 - 反向漏电 @ Vr	电容 @ Vr, F	电流 - 平均整流（Io）	等级	认证	安装类型	供应商设备封装	工作温度 - 结点
3A60 B0G DIODE GEN PURP 600V 3A DO204AC Taiwan Semiconductor Corporation	3,991	-	询价单	数据表	-	DO-204AC, DO-15, Axial	Bulk	Discontinued at Digi-Key	Standard	600 V	1.1 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 600 V	27pF @ 4V, 1MHz	3A	-	-	Through Hole	DO-204AC (DO-15)	-55°C ~ 150°C
6A100G B0G DIODE GEN PURP 1KV 6A R-6 Taiwan Semiconductor Corporation	6,408	-	询价单	数据表	-	R-6, Axial	Bulk	Active	Standard	1000 V	1 V @ 6 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 1000 V	60pF @ 4V, 1MHz	6A	-	-	Through Hole	R-6	-55°C ~ 150°C
6A10G B0G DIODE GEN PURP 100V 6A R-6 Taiwan Semiconductor Corporation	2,069	-	询价单	数据表	-	R-6, Axial	Bulk	Discontinued at Digi-Key	Standard	100 V	1.1 V @ 6 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 100 V	60pF @ 4V, 1MHz	6A	-	-	Through Hole	R-6	-55°C ~ 150°C
6A10GHB0G DIODE GEN PURP 100V 6A R-6 Taiwan Semiconductor Corporation	5,123	-	询价单	数据表	-	R-6, Axial	Bulk	Active	Standard	100 V	1.1 V @ 6 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 100 V	60pF @ 4V, 1MHz	6A	Automotive	AEC-Q101	Through Hole	R-6	-55°C ~ 150°C
HERAF1606G DIODE GEN PURP 600V 16A ITO220AC Taiwan Semiconductor Corporation	8,154	-	询价单	数据表	-	TO-220-2 Full Pack	Tube	Active	Standard	600 V	1.7 V @ 16 A	Fast Recovery =< 500ns, > 200mA (Io)	80 ns	10 µA @ 600 V	110pF @ 4V, 1MHz	16A	-	-	Through Hole	ITO-220AC	-55°C ~ 150°C
S15JLWHRVG DIODE GEN PURP 600V 1.5A SOD123W Taiwan Semiconductor Corporation	9,025	-	询价单	数据表	-	SOD-123W	Tape & Reel (TR)	Active	Standard	600 V	1.1 V @ 1.5 A	Standard Recovery >500ns, > 200mA (Io)	-	1 µA @ 600 V	10pF @ 4V, 1MHz	1.5A	-	-	Surface Mount	SOD-123W	-55°C ~ 175°C
6A20G B0G DIODE GEN PURP 200V 6A R-6 Taiwan Semiconductor Corporation	9,408	-	询价单	数据表	-	R-6, Axial	Bulk	Discontinued at Digi-Key	Standard	200 V	1 V @ 6 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 200 V	60pF @ 4V, 1MHz	6A	-	-	Through Hole	R-6	-55°C ~ 150°C
6A40GHB0G DIODE GEN PURP 400V 6A R-6 Taiwan Semiconductor Corporation	5,672	-	询价单	数据表	-	R-6, Axial	Bulk	Discontinued at Digi-Key	Standard	400 V	1 V @ 6 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 400 V	60pF @ 4V, 1MHz	6A	Automotive	AEC-Q101	Through Hole	R-6	-55°C ~ 150°C
6A60G B0G DIODE GEN PURP 600V 6A R-6 Taiwan Semiconductor Corporation	6,135	-	询价单	数据表	-	R-6, Axial	Bulk	Discontinued at Digi-Key	Standard	600 V	1 V @ 6 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 600 V	60pF @ 4V, 1MHz	6A	-	-	Through Hole	R-6	-55°C ~ 150°C
6A60GHB0G DIODE GEN PURP 600V 6A R-6 Taiwan Semiconductor Corporation	3,662	-	询价单	数据表	-	R-6, Axial	Bulk	Discontinued at Digi-Key	Standard	600 V	1 V @ 6 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 600 V	60pF @ 4V, 1MHz	6A	Automotive	AEC-Q101	Through Hole	R-6	-55°C ~ 150°C

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