| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)(最大值) | 电压 - 正向 (Vf)(最大值)@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流(Io) | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1N5819 B0GDIODE SCHOTTKY 40V 1A DO204AL Taiwan Semiconductor Corporation |
9,680 | - |
|
数据表 |
- | DO-204AL, DO-41, Axial | Bulk | Active | Schottky | 40 V | 600 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1 mA @ 40 V | 55pF @ 4V, 1MHz | 1A | - | - | Through Hole | DO-204AL (DO-41) | -55°C ~ 125°C |
|
1N5819HB0GDIODE SCHOTTKY 40V 1A DO204AL Taiwan Semiconductor Corporation |
2,371 | - |
|
数据表 |
- | DO-204AL, DO-41, Axial | Bulk | Active | Schottky | 40 V | 600 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1 mA @ 40 V | 55pF @ 4V, 1MHz | 1A | Automotive | AEC-Q101 | Through Hole | DO-204AL (DO-41) | -55°C ~ 125°C |
|
1N5820 B0GDIODE SCHOTTKY 20V 3A DO201AD Taiwan Semiconductor Corporation |
4,819 | - |
|
数据表 |
- | DO-201AD, Axial | Bulk | Active | Schottky | 20 V | 475 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 20 V | 200pF @ 4V, 1MHz | 3A | - | - | Through Hole | DO-201AD | -55°C ~ 125°C |
|
2A06G B0GDIODE GEN PURP 800V 2A DO204AC Taiwan Semiconductor Corporation |
6,981 | - |
|
数据表 |
- | DO-204AC, DO-15, Axial | Bulk | Active | Standard | 800 V | 1 V @ 2 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 800 V | 15pF @ 4V, 1MHz | 2A | - | - | Through Hole | DO-204AC (DO-15) | -55°C ~ 150°C |
|
2A07G B0GDIODE GEN PURP 2A DO204AC Taiwan Semiconductor Corporation |
2,450 | - |
|
数据表 |
- | DO-204AC, DO-15, Axial | Bulk | Active | Standard | 1000 V | 1 V @ 2 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 1000 V | 15pF @ 4V, 1MHz | 2A | - | - | Through Hole | DO-204AC (DO-15) | -55°C ~ 150°C |
|
31DF4 B0GDIODE GEN PURP 400V 3A DO201AD Taiwan Semiconductor Corporation |
5,306 | - |
|
数据表 |
- | DO-201AD, Axial | Bulk | Active | Standard | 400 V | 1.7 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 20 µA @ 400 V | - | 3A | - | - | Through Hole | DO-201AD | -40°C ~ 150°C |
|
3A100 B0GDIODE GEN PURP 3A DO204AC Taiwan Semiconductor Corporation |
9,182 | - |
|
数据表 |
- | DO-204AC, DO-15, Axial | Bulk | Discontinued at Digi-Key | Standard | 1000 V | 1.1 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 1000 V | 27pF @ 4V, 1MHz | 3A | - | - | Through Hole | DO-204AC (DO-15) | -55°C ~ 150°C |
|
|
ES1GLW RVGDIODE GEN PURP 400V 1A SOD123W Taiwan Semiconductor Corporation |
7,694 | - |
|
数据表 |
- | SOD-123W | Tape & Reel (TR) | Active | Standard | 400 V | 1.3 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 5 µA @ 400 V | 20pF @ 4V, 1MHz | 1A | - | - | Surface Mount | SOD-123W | -55°C ~ 175°C |
|
|
S1GFS MWGDIODE GEN PURP 400V 1A SOD128 Taiwan Semiconductor Corporation |
5,767 | - |
|
数据表 |
- | SOD-128 | Tape & Reel (TR) | Active | Standard | 400 V | 1.1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | - | 1 µA @ 400 V | 9pF @ 4V, 1MHz | 1A | - | - | Surface Mount | SOD-128 | -55°C ~ 150°C |
|
PE2DBH20NS, 2A, 200V, ULTRA FAST RECOV Taiwan Semiconductor Corporation |
3,752 | - |
|
数据表 |
- | DO-214AA, SMB | Tape & Reel (TR) | Active | Standard | 200 V | 900 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 20 ns | 2 µA @ 200 V | 30pF @ 4V, 1MHz | 2A | Automotive | AEC-Q101 | Surface Mount | DO-214AA (SMB) | -55°C ~ 175°C |