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制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
SF27G B0G

SF27G B0G

DIODE GEN PURP 500V 2A DO204AC

Taiwan Semiconductor Corporation

3,659 -
SF27G B0G

数据表

- DO-204AC, DO-15, Axial Bulk Discontinued at Digi-Key Standard 500 V 1.7 V @ 2 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 5 µA @ 500 V 20pF @ 4V, 1MHz 2A - - Through Hole DO-204AC (DO-15) -55°C ~ 150°C
SF28G B0G

SF28G B0G

DIODE GEN PURP 600V 2A DO204AC

Taiwan Semiconductor Corporation

4,559 -
SF28G B0G

数据表

- DO-204AC, DO-15, Axial Bulk Active Standard 600 V 1.7 V @ 2 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 5 µA @ 600 V 20pF @ 4V, 1MHz 2A - - Through Hole DO-204AC (DO-15) -55°C ~ 150°C
SF31G B0G

SF31G B0G

DIODE GEN PURP 50V 3A DO201AD

Taiwan Semiconductor Corporation

9,817 -
SF31G B0G

数据表

- DO-201AD, Axial Bulk Active Standard 50 V 950 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 5 µA @ 50 V 80pF @ 4V, 1MHz 3A - - Through Hole DO-201AD -55°C ~ 150°C
SF34G B0G

SF34G B0G

DIODE GEN PURP 200V 3A DO201AD

Taiwan Semiconductor Corporation

9,411 -
SF34G B0G

数据表

- DO-201AD, Axial Bulk Active Standard 200 V 950 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 5 µA @ 200 V 80pF @ 4V, 1MHz 3A - - Through Hole DO-201AD -55°C ~ 150°C
SF36G B0G

SF36G B0G

DIODE GEN PURP 400V 3A DO201AD

Taiwan Semiconductor Corporation

7,604 -
SF36G B0G

数据表

- DO-201AD, Axial Bulk Discontinued at Digi-Key Standard 400 V 1.3 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 5 µA @ 400 V 60pF @ 4V, 1MHz 3A - - Through Hole DO-201AD -55°C ~ 150°C
SF38G B0G

SF38G B0G

DIODE GEN PURP 600V 3A DO201AD

Taiwan Semiconductor Corporation

7,789 -
SF38G B0G

数据表

- DO-201AD, Axial Bulk Discontinued at Digi-Key Standard 600 V 1.7 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 5 µA @ 600 V 60pF @ 4V, 1MHz 3A - - Through Hole DO-201AD -55°C ~ 150°C
PU3BFSH

PU3BFSH

DIODE GEN PURP 100V 3A SOD128

Taiwan Semiconductor Corporation

9,099 -
PU3BFSH

数据表

- SOD-128 Tape & Reel (TR) Active Standard 100 V 930 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 2 µA @ 100 V 47pF @ 4V, 1MHz 3A - - Surface Mount SOD-128 -55°C ~ 175°C
RS1GL R3G

RS1GL R3G

DIODE GP 400V 800MA SUB SMA

Taiwan Semiconductor Corporation

8 -
RS1GL R3G

数据表

- DO-219AB Tape & Reel (TR) Active Standard 400 V 1.3 V @ 800 mA Fast Recovery =< 500ns, > 200mA (Io) 150 ns 5 µA @ 400 V 10pF @ 4V, 1MHz 800mA - - Surface Mount Sub SMA -55°C ~ 150°C
SF44G B0G

SF44G B0G

DIODE GEN PURP 200V 4A DO201AD

Taiwan Semiconductor Corporation

6,130 -
SF44G B0G

数据表

- DO-201AD, Axial Bulk Active Standard 200 V 1 V @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 5 µA @ 200 V 100pF @ 4V, 1MHz 4A - - Through Hole DO-201AD -55°C ~ 150°C
SF68G B0G

SF68G B0G

DIODE GEN PURP 600V 6A DO201AD

Taiwan Semiconductor Corporation

5,286 -
SF68G B0G

数据表

- DO-201AD, Axial Bulk Active Standard 600 V 1.7 V @ 6 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 5 µA @ 600 V 50pF @ 4V, 1MHz 6A - - Through Hole DO-201AD -55°C ~ 150°C
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