| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)(最大值) | 电压 - 正向 (Vf)(最大值)@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流(Io) | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SF27G B0GDIODE GEN PURP 500V 2A DO204AC Taiwan Semiconductor Corporation |
3,659 | - |
|
数据表 |
- | DO-204AC, DO-15, Axial | Bulk | Discontinued at Digi-Key | Standard | 500 V | 1.7 V @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 5 µA @ 500 V | 20pF @ 4V, 1MHz | 2A | - | - | Through Hole | DO-204AC (DO-15) | -55°C ~ 150°C |
|
SF28G B0GDIODE GEN PURP 600V 2A DO204AC Taiwan Semiconductor Corporation |
4,559 | - |
|
数据表 |
- | DO-204AC, DO-15, Axial | Bulk | Active | Standard | 600 V | 1.7 V @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 5 µA @ 600 V | 20pF @ 4V, 1MHz | 2A | - | - | Through Hole | DO-204AC (DO-15) | -55°C ~ 150°C |
|
SF31G B0GDIODE GEN PURP 50V 3A DO201AD Taiwan Semiconductor Corporation |
9,817 | - |
|
数据表 |
- | DO-201AD, Axial | Bulk | Active | Standard | 50 V | 950 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 5 µA @ 50 V | 80pF @ 4V, 1MHz | 3A | - | - | Through Hole | DO-201AD | -55°C ~ 150°C |
|
SF34G B0GDIODE GEN PURP 200V 3A DO201AD Taiwan Semiconductor Corporation |
9,411 | - |
|
数据表 |
- | DO-201AD, Axial | Bulk | Active | Standard | 200 V | 950 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 5 µA @ 200 V | 80pF @ 4V, 1MHz | 3A | - | - | Through Hole | DO-201AD | -55°C ~ 150°C |
|
SF36G B0GDIODE GEN PURP 400V 3A DO201AD Taiwan Semiconductor Corporation |
7,604 | - |
|
数据表 |
- | DO-201AD, Axial | Bulk | Discontinued at Digi-Key | Standard | 400 V | 1.3 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 5 µA @ 400 V | 60pF @ 4V, 1MHz | 3A | - | - | Through Hole | DO-201AD | -55°C ~ 150°C |
|
SF38G B0GDIODE GEN PURP 600V 3A DO201AD Taiwan Semiconductor Corporation |
7,789 | - |
|
数据表 |
- | DO-201AD, Axial | Bulk | Discontinued at Digi-Key | Standard | 600 V | 1.7 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 5 µA @ 600 V | 60pF @ 4V, 1MHz | 3A | - | - | Through Hole | DO-201AD | -55°C ~ 150°C |
|
|
PU3BFSHDIODE GEN PURP 100V 3A SOD128 Taiwan Semiconductor Corporation |
9,099 | - |
|
数据表 |
- | SOD-128 | Tape & Reel (TR) | Active | Standard | 100 V | 930 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 2 µA @ 100 V | 47pF @ 4V, 1MHz | 3A | - | - | Surface Mount | SOD-128 | -55°C ~ 175°C |
|
|
RS1GL R3GDIODE GP 400V 800MA SUB SMA Taiwan Semiconductor Corporation |
8 | - |
|
数据表 |
- | DO-219AB | Tape & Reel (TR) | Active | Standard | 400 V | 1.3 V @ 800 mA | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 5 µA @ 400 V | 10pF @ 4V, 1MHz | 800mA | - | - | Surface Mount | Sub SMA | -55°C ~ 150°C |
|
SF44G B0GDIODE GEN PURP 200V 4A DO201AD Taiwan Semiconductor Corporation |
6,130 | - |
|
数据表 |
- | DO-201AD, Axial | Bulk | Active | Standard | 200 V | 1 V @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 5 µA @ 200 V | 100pF @ 4V, 1MHz | 4A | - | - | Through Hole | DO-201AD | -55°C ~ 150°C |
|
SF68G B0GDIODE GEN PURP 600V 6A DO201AD Taiwan Semiconductor Corporation |
5,286 | - |
|
数据表 |
- | DO-201AD, Axial | Bulk | Active | Standard | 600 V | 1.7 V @ 6 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 5 µA @ 600 V | 50pF @ 4V, 1MHz | 6A | - | - | Through Hole | DO-201AD | -55°C ~ 150°C |