| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)(最大值) | 电压 - 正向 (Vf)(最大值)@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流(Io) | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1N4006G B0GDIODE GEN PURP 800V 1A DO204AL Taiwan Semiconductor Corporation |
2,193 | - |
|
数据表 |
- | DO-204AL, DO-41, Axial | Bulk | Active | Standard | 800 V | 1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 800 V | 10pF @ 4V, 1MHz | 1A | - | - | Through Hole | DO-204AL (DO-41) | -55°C ~ 150°C |
|
1N4006GHB0GDIODE GEN PURP 800V 1A DO204AL Taiwan Semiconductor Corporation |
2,723 | - |
|
数据表 |
- | DO-204AL, DO-41, Axial | Bulk | Active | Standard | 800 V | 1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 800 V | 10pF @ 4V, 1MHz | 1A | Automotive | AEC-Q101 | Through Hole | DO-204AL (DO-41) | -55°C ~ 150°C |
|
1N4007G B0GDIODE GEN PURP 1KV 1A DO204AL Taiwan Semiconductor Corporation |
5,035 | - |
|
数据表 |
- | DO-204AL, DO-41, Axial | Bulk | Active | Standard | 1000 V | 1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 1000 V | 10pF @ 4V, 1MHz | 1A | - | - | Through Hole | DO-204AL (DO-41) | -55°C ~ 150°C |
|
1N4007GHB0GDIODE GEN PURP 1KV 1A DO204AL Taiwan Semiconductor Corporation |
7,006 | - |
|
数据表 |
- | DO-204AL, DO-41, Axial | Bulk | Discontinued at Digi-Key | Standard | 1000 V | 1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 1000 V | 10pF @ 4V, 1MHz | 1A | Automotive | AEC-Q101 | Through Hole | DO-204AL (DO-41) | -55°C ~ 150°C |
|
1N4934G B0GDIODE GEN PURP 100V 1A DO204AL Taiwan Semiconductor Corporation |
9,926 | - |
|
数据表 |
- | DO-204AL, DO-41, Axial | Bulk | Active | Standard | 100 V | 1.2 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 200 ns | 5 µA @ 100 V | 10pF @ 4V, 1MHz | 1A | - | - | Through Hole | DO-204AL (DO-41) | -55°C ~ 150°C |
|
1N4936GHB0GDIODE GEN PURP 400V 1A DO204AL Taiwan Semiconductor Corporation |
2,612 | - |
|
数据表 |
- | DO-204AL, DO-41, Axial | Bulk | Active | Standard | 400 V | 1.2 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 200 ns | 5 µA @ 400 V | 10pF @ 4V, 1MHz | 1A | Automotive | AEC-Q101 | Through Hole | DO-204AL (DO-41) | -55°C ~ 150°C |
|
1N4937G B0GDIODE GEN PURP 600V 1A DO204AL Taiwan Semiconductor Corporation |
5,281 | - |
|
数据表 |
- | DO-204AL, DO-41, Axial | Bulk | Active | Standard | 600 V | 1.2 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 200 ns | 5 µA @ 600 V | 10pF @ 4V, 1MHz | 1A | - | - | Through Hole | DO-204AL (DO-41) | -55°C ~ 150°C |
|
1N5397G B0GDIODE GEN PURP 600V 1.5A DO204AC Taiwan Semiconductor Corporation |
8,571 | - |
|
数据表 |
- | DO-204AC, DO-15, Axial | Bulk | Active | Standard | 600 V | 1 V @ 1.5 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 600 V | 15pF @ 4V, 1MHz | 1.5A | - | - | Through Hole | DO-204AC (DO-15) | -55°C ~ 150°C |
|
1N5398GHB0GDIODE GEN PURP 800V 1.5A DO204AC Taiwan Semiconductor Corporation |
9,011 | - |
|
数据表 |
- | DO-204AC, DO-15, Axial | Bulk | Active | Standard | 800 V | 1 V @ 1.5 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 800 V | 15pF @ 4V, 1MHz | 1.5A | Automotive | AEC-Q101 | Through Hole | DO-204AC (DO-15) | -55°C ~ 150°C |
|
1N5400GHB0GDIODE GEN PURP 50V 3A DO201AD Taiwan Semiconductor Corporation |
9,342 | - |
|
数据表 |
- | DO-201AD, Axial | Bulk | Active | Standard | 50 V | 1.1 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 50 V | 25pF @ 4V, 1MHz | 3A | Automotive | AEC-Q101 | Through Hole | DO-201AD | -55°C ~ 150°C |