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制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
1N4006G B0G

1N4006G B0G

DIODE GEN PURP 800V 1A DO204AL

Taiwan Semiconductor Corporation

2,193 -
1N4006G B0G

数据表

- DO-204AL, DO-41, Axial Bulk Active Standard 800 V 1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 800 V 10pF @ 4V, 1MHz 1A - - Through Hole DO-204AL (DO-41) -55°C ~ 150°C
1N4006GHB0G

1N4006GHB0G

DIODE GEN PURP 800V 1A DO204AL

Taiwan Semiconductor Corporation

2,723 -
1N4006GHB0G

数据表

- DO-204AL, DO-41, Axial Bulk Active Standard 800 V 1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 800 V 10pF @ 4V, 1MHz 1A Automotive AEC-Q101 Through Hole DO-204AL (DO-41) -55°C ~ 150°C
1N4007G B0G

1N4007G B0G

DIODE GEN PURP 1KV 1A DO204AL

Taiwan Semiconductor Corporation

5,035 -
1N4007G B0G

数据表

- DO-204AL, DO-41, Axial Bulk Active Standard 1000 V 1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 1000 V 10pF @ 4V, 1MHz 1A - - Through Hole DO-204AL (DO-41) -55°C ~ 150°C
1N4007GHB0G

1N4007GHB0G

DIODE GEN PURP 1KV 1A DO204AL

Taiwan Semiconductor Corporation

7,006 -
1N4007GHB0G

数据表

- DO-204AL, DO-41, Axial Bulk Discontinued at Digi-Key Standard 1000 V 1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 1000 V 10pF @ 4V, 1MHz 1A Automotive AEC-Q101 Through Hole DO-204AL (DO-41) -55°C ~ 150°C
1N4934G B0G

1N4934G B0G

DIODE GEN PURP 100V 1A DO204AL

Taiwan Semiconductor Corporation

9,926 -
1N4934G B0G

数据表

- DO-204AL, DO-41, Axial Bulk Active Standard 100 V 1.2 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 200 ns 5 µA @ 100 V 10pF @ 4V, 1MHz 1A - - Through Hole DO-204AL (DO-41) -55°C ~ 150°C
1N4936GHB0G

1N4936GHB0G

DIODE GEN PURP 400V 1A DO204AL

Taiwan Semiconductor Corporation

2,612 -
1N4936GHB0G

数据表

- DO-204AL, DO-41, Axial Bulk Active Standard 400 V 1.2 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 200 ns 5 µA @ 400 V 10pF @ 4V, 1MHz 1A Automotive AEC-Q101 Through Hole DO-204AL (DO-41) -55°C ~ 150°C
1N4937G B0G

1N4937G B0G

DIODE GEN PURP 600V 1A DO204AL

Taiwan Semiconductor Corporation

5,281 -
1N4937G B0G

数据表

- DO-204AL, DO-41, Axial Bulk Active Standard 600 V 1.2 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 200 ns 5 µA @ 600 V 10pF @ 4V, 1MHz 1A - - Through Hole DO-204AL (DO-41) -55°C ~ 150°C
1N5397G B0G

1N5397G B0G

DIODE GEN PURP 600V 1.5A DO204AC

Taiwan Semiconductor Corporation

8,571 -
1N5397G B0G

数据表

- DO-204AC, DO-15, Axial Bulk Active Standard 600 V 1 V @ 1.5 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 600 V 15pF @ 4V, 1MHz 1.5A - - Through Hole DO-204AC (DO-15) -55°C ~ 150°C
1N5398GHB0G

1N5398GHB0G

DIODE GEN PURP 800V 1.5A DO204AC

Taiwan Semiconductor Corporation

9,011 -
1N5398GHB0G

数据表

- DO-204AC, DO-15, Axial Bulk Active Standard 800 V 1 V @ 1.5 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 800 V 15pF @ 4V, 1MHz 1.5A Automotive AEC-Q101 Through Hole DO-204AC (DO-15) -55°C ~ 150°C
1N5400GHB0G

1N5400GHB0G

DIODE GEN PURP 50V 3A DO201AD

Taiwan Semiconductor Corporation

9,342 -
1N5400GHB0G

数据表

- DO-201AD, Axial Bulk Active Standard 50 V 1.1 V @ 3 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 50 V 25pF @ 4V, 1MHz 3A Automotive AEC-Q101 Through Hole DO-201AD -55°C ~ 150°C
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