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制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
FR305

FR305

DIODE GEN PURP 600V 3A DO201AD

SMC Diode Solutions

7,132 -
FR305

数据表

- DO-201AD, Axial Tape & Box (TB) Obsolete Standard 600 V 1.3 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 250 ns 5 µA @ 600 V 60pF @ 4V, 1MHz 3A - - Through Hole DO-201AD -65°C ~ 150°C
FR306

FR306

DIODE GEN PURP 800V 3A DO201AD

SMC Diode Solutions

5,113 -
FR306

数据表

- DO-201AD, Axial Tape & Box (TB) Obsolete Standard 800 V 1.3 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 500 ns 5 µA @ 800 V 60pF @ 4V, 1MHz 3A - - Through Hole DO-201AD -65°C ~ 150°C
V15PM63-M3/H

V15PM63-M3/H

DIODE SCHOTTKY 60V 4.6A TO277A

Vishay General Semiconductor - Diodes Division

4,373 -
V15PM63-M3/H

数据表

- TO-277, 3-PowerDFN Tape & Reel (TR) Active Schottky 60 V 660 mV @ 15 A Fast Recovery =< 500ns, > 200mA (Io) - 35 µA @ 60 V 2700pF @ 4V, 1MHz 4.6A Automotive AEC-Q101 Surface Mount TO-277A (SMPC) -40°C ~ 175°C
V15PM63HM3/H

V15PM63HM3/H

DIODE SCHOTTKY 60V 4.6A TO277A

Vishay General Semiconductor - Diodes Division

4,373 -
V15PM63HM3/H

数据表

- TO-277, 3-PowerDFN Tape & Reel (TR) Active Schottky 60 V 660 mV @ 15 A Fast Recovery =< 500ns, > 200mA (Io) - 35 µA @ 60 V 2700pF @ 4V, 1MHz 4.6A Automotive AEC-Q101 Surface Mount TO-277A (SMPC) -40°C ~ 175°C
6A04B-G

6A04B-G

DIODE GEN PURP 400V 6A R-6

Comchip Technology

5,789 -
6A04B-G

数据表

- R-6, Axial Bulk Active Standard 400 V 1 V @ 6 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 400 V 100pF @ 4V, 1MHz 6A - - Through Hole R-6 -55°C ~ 125°C
6A08B-G

6A08B-G

DIODE GEN PURP 800V 6A R-6

Comchip Technology

7,141 -
6A08B-G

数据表

- R-6, Axial Bulk Active Standard 800 V 1 V @ 6 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 800 V 100pF @ 4V, 1MHz 6A - - Through Hole R-6 -55°C ~ 125°C
6A10B-G

6A10B-G

DIODE GEN PURP 1KV 6A R-6

Comchip Technology

8,337 -
6A10B-G

数据表

- R-6, Axial Bulk Active Standard 1000 V 1 V @ 6 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 1000 V 100pF @ 4V, 1MHz 6A - - Through Hole R-6 -55°C ~ 125°C
SDT10A100P5-13D

SDT10A100P5-13D

DIODE SCHOTTKY 100V 10A PDI5 5K

Diodes Incorporated

2,262 -
SDT10A100P5-13D

数据表

- PowerDI™ 5 Tape & Reel (TR) Active Schottky 100 V 680 mV @ 10 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 100 V - 10A - - Surface Mount PowerDI™ 5 -55°C ~ 150°C
FE6B

FE6B

DIODE GEN PURP 100V 6A P600

Diotec Semiconductor

8,301 -
FE6B

数据表

- P600, Axial Bulk Active Standard 100 V 980 mV @ 5 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 5 µA @ 100 V - 6A - - Through Hole P-600 -50°C ~ 175°C
QD606S_S2_00001

QD606S_S2_00001

DIODE GEN PURP 600V 6A TO252

Panjit International Inc.

8,719 -
QD606S_S2_00001

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete Standard 600 V 1.45 V @ 6 A Fast Recovery =< 500ns, > 200mA (Io) 75 ns 3 µA @ 600 V - 6A - - Surface Mount TO-252 -55°C ~ 175°C
EGF1C-E3/67A

EGF1C-E3/67A

DIODE GEN PURP 150V 1A DO214BA

Vishay General Semiconductor - Diodes Division

8,693 -
EGF1C-E3/67A

数据表

SUPERECTIFIER® DO-214BA Tape & Reel (TR) Active Standard 150 V 1 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 5 µA @ 150 V 15pF @ 4V, 1MHz 1A - - Surface Mount DO-214BA (GF1) -65°C ~ 175°C
RO 2BV

RO 2BV

DIODE GEN PURP 800V 1.2A AXIAL

Sanken Electric USA Inc.

7,308 -
RO 2BV

数据表

- Axial Tape & Reel (TR) Active Standard 800 V 920 mV @ 1.5 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 800 V - 1.2A - - Through Hole - -40°C ~ 150°C
RO 2BV1

RO 2BV1

DIODE GEN PURP 800V 1.2A AXIAL

Sanken Electric USA Inc.

8,461 -
RO 2BV1

数据表

- Axial Tape & Box (TB) Active Standard 800 V 920 mV @ 1.5 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 800 V - 1.2A - - Through Hole - -40°C ~ 150°C
ES3F

ES3F

DIODE GEN PURP 300V 3A SMC

Diotec Semiconductor

2,383 -
ES3F

数据表

- DO-214AB, SMC Bulk Active Standard 300 V 1.3 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 5 µA @ 300 V - 3A - - Surface Mount DO-214AB (SMC) -50°C ~ 150°C
RL205-T

RL205-T

DIODE GEN PURP 600V 2A DO15

Diodes Incorporated

8,532 -
RL205-T

数据表

- DO-204AC, DO-15, Axial Tape & Reel (TR) Obsolete Standard 600 V 1 V @ 2 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 600 V - 2A - - Through Hole DO-15 -65°C ~ 150°C
RL204-T

RL204-T

DIODE GEN PURP 400V 2A DO15

Diodes Incorporated

9,512 -
RL204-T

数据表

- DO-204AC, DO-15, Axial Tape & Reel (TR) Obsolete Standard 400 V 1 V @ 2 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 400 V - 2A - - Through Hole DO-15 -65°C ~ 150°C
RB521S30

RB521S30

DIODE SCHOTTKY 30V 200MA SOD523F

onsemi

3,965 -
RB521S30

数据表

- SC-79, SOD-523F Tape & Reel (TR) Obsolete Schottky 30 V 500 mV @ 200 mA Small Signal =< 200mA (Io), Any Speed - 30 µA @ 10 V - 200mA - - Surface Mount SOD-523F -55°C ~ 125°C
FR307

FR307

DIODE GEN PURP 1KV 3A DO201AD

SMC Diode Solutions

2,169 -
FR307

数据表

- DO-201AD, Axial Tape & Box (TB) Obsolete Standard 1000 V 1.3 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 500 ns 5 µA @ 1000 V 60pF @ 4V, 1MHz 3A - - Through Hole DO-201AD -65°C ~ 150°C
LFUSCD10065A

LFUSCD10065A

DIODE SIL CARB 650V 10A TO220AC

Littelfuse Inc.

9,504 -
LFUSCD10065A

数据表

- TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 1.7 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 250 µA @ 650 V 290pF @ 1V, 1MHz 10A - - Through Hole TO-220AC 175°C (Max)
LFUSCD05120A

LFUSCD05120A

DIODE SIL CARB 1.2KV 5A TO220AC

Littelfuse Inc.

7,017 -
LFUSCD05120A

数据表

- TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 1.7 V @ 5 A No Recovery Time > 500mA (Io) 0 ns 190 µA @ 1200 V 260pF @ 1V, 1MHz 5A - - Through Hole TO-220AC 175°C (Max)
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