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制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
VS-5EWX06FN-M3

VS-5EWX06FN-M3

DIODE GEN PURP 600V 5A DPAK

Vishay General Semiconductor - Diodes Division

2,940 -
VS-5EWX06FN-M3

数据表

FRED Pt® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active Standard 600 V 2.9 V @ 5 A Fast Recovery =< 500ns, > 200mA (Io) 21 ns 20 µA @ 600 V - 5A - - Surface Mount TO-252AA (DPAK) -65°C ~ 175°C
VS-5EWH06FN-M3

VS-5EWH06FN-M3

DIODE GEN PURP 600V 5A D-PAK

Vishay General Semiconductor - Diodes Division

2,563 -
VS-5EWH06FN-M3

数据表

FRED Pt® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Active Standard 600 V 1.85 V @ 5 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 5 µA @ 600 V - 5A - - Surface Mount TO-252AA (DPAK) -65°C ~ 175°C
RFN3BM6SFHTL

RFN3BM6SFHTL

DIODE GEN PURP 600V 3A TO252

Rohm Semiconductor

2,451 -
RFN3BM6SFHTL

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active Standard 600 V 1.55 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 10 µA @ 600 V - 3A Automotive AEC-Q101 Surface Mount TO-252 150°C (Max)
TPUH6D S1G

TPUH6D S1G

DIODE GEN PURP 200V 6A TO277A

Taiwan Semiconductor Corporation

2,378 -
TPUH6D S1G

数据表

- TO-277, 3-PowerDFN Tape & Reel (TR) Active Standard 200 V 1.05 V @ 6 A Fast Recovery =< 500ns, > 200mA (Io) 45 ns 10 µA @ 200 V 50pF @ 4V, 1MHz 6A - - Surface Mount TO-277A (SMPC) -55°C ~ 175°C
GI1-1600GP-E3/73

GI1-1600GP-E3/73

DIODE GEN PURP 1.6KV 1A DO204AC

Vishay General Semiconductor - Diodes Division

1,985 -
GI1-1600GP-E3/73

数据表

SUPERECTIFIER® DO-204AC, DO-15, Axial Cut Tape (CT) Active Standard 1600 V 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) 1.5 µs 10 µA @ 1600 V - 1A - - Through Hole DO-204AC (DO-15) -65°C ~ 175°C
AS1PDHM3/84A

AS1PDHM3/84A

DIODE AVAL 200V 1.5A DO220AA

Vishay General Semiconductor - Diodes Division

1,070 -
AS1PDHM3/84A

数据表

eSMP® DO-220AA Tape & Reel (TR) Active Avalanche 200 V 1.15 V @ 1.5 A Standard Recovery >500ns, > 200mA (Io) 1.5 µs 5 µA @ 200 V 10.4pF @ 4V, 1MHz 1.5A Automotive AEC-Q101 Surface Mount DO-220AA (SMP) -55°C ~ 175°C
SE100PWTJ-M3/I

SE100PWTJ-M3/I

DIODE GP 600V 2.7A SLIMDPAK

Vishay General Semiconductor - Diodes Division

4,800 -
SE100PWTJ-M3/I

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active Standard 600 V 1.14 V @ 10 A Standard Recovery >500ns, > 200mA (Io) 2.6 µs 20 µA @ 600 V 78pF @ 4V, 1MHz 2.7A Automotive AEC-Q101 Surface Mount SlimDPAK -55°C ~ 175°C
IRD3CH11DF6

IRD3CH11DF6

DIODE CHIP EMITTER CONTROLLED

Infineon Technologies

7,637 -
IRD3CH11DF6

数据表

- - Bulk Obsolete - - - - - - - - - - - - -
IRD3CH16DF6

IRD3CH16DF6

DIODE CHIP EMITTER CONTROLLED

Infineon Technologies

7,905 -
IRD3CH16DF6

数据表

- - Bulk Obsolete - - - - - - - - - - - - -
IRD3CH24DF6

IRD3CH24DF6

DIODE CHIP EMITTER CONTROLLED

Infineon Technologies

6,613 -
IRD3CH24DF6

数据表

- - Bulk Obsolete - - - - - - - - - - - - -
IRD3CH31DF6

IRD3CH31DF6

DIODE CHIP EMITTER CONTROLLED

Infineon Technologies

7,352 -
IRD3CH31DF6

数据表

- - Bulk Obsolete - - - - - - - - - - - - -
IRD3CH53DB6

IRD3CH53DB6

DIODE GEN PURP 1.2KV 100A DIE

Infineon Technologies

6,919 -
IRD3CH53DB6

数据表

- Die Bulk Obsolete Standard 1200 V 2.7 V @ 100 A Fast Recovery =< 500ns, > 200mA (Io) 270 ns 20 µA @ 1200 V - 100A - - Surface Mount Die -40°C ~ 150°C
IRD3CH53DF6

IRD3CH53DF6

DIODE CHIP EMITTER CONTROLLED

Infineon Technologies

2,541 -
IRD3CH53DF6

数据表

- - Bulk Obsolete - - - - - - - - - - - - -
IRD3CH5DB6

IRD3CH5DB6

DIODE GEN PURP 1.2KV 5A DIE

Infineon Technologies

5,947 -
IRD3CH5DB6

数据表

- Die Bulk Obsolete Standard 1200 V 2.7 V @ 5 A Fast Recovery =< 500ns, > 200mA (Io) 96 ns 100 nA @ 1200 V - 5A - - Surface Mount Die -40°C ~ 150°C
IRD3CH82DF6

IRD3CH82DF6

DIODE CHIP EMITTER CONTROLLED

Infineon Technologies

4,112 -
IRD3CH82DF6

数据表

- - Bulk Obsolete - - - - - - - - - - - - -
IRD3CH9DB6

IRD3CH9DB6

DIODE GEN PURP 1.2KV 10A DIE

Infineon Technologies

8,722 -
IRD3CH9DB6

数据表

- Die Bulk Obsolete Standard 1200 V 2.7 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) 154 ns 200 nA @ 1200 V - 10A - - Surface Mount Die -40°C ~ 150°C
IRD3CH9DF6

IRD3CH9DF6

DIODE CHIP EMITTER CONTROLLED

Infineon Technologies

5,274 -
IRD3CH9DF6

数据表

- - Bulk Obsolete - - - - - - - - - - - - -
FR107

FR107

DIODE GEN PURP 1KV 1A DO41

SMC Diode Solutions

6,202 -
FR107

数据表

- DO-204AL, DO-41, Axial Cut Tape (CT) Obsolete Standard 1000 V 1.3 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 500 ns 5 µA @ 1000 V 15pF @ 4V, 1MHz 1A - - Through Hole DO-41 -65°C ~ 150°C
BYW76RAS15-10-PH

BYW76RAS15-10-PH

DIODE GEN PURP 600V 3A SOD64

Vishay General Semiconductor - Diodes Division

5,191 -
BYW76RAS15-10-PH

数据表

- SOD-64, Axial Tape & Reel (TR) Obsolete Standard 600 V 1 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 200 ns 5 µA @ 600 V - 3A - - Through Hole SOD-64 -55°C ~ 175°C
LL101A-13

LL101A-13

DIODE SCHOT 60V 30MA SOD80

Vishay General Semiconductor - Diodes Division

5,348 -
LL101A-13

数据表

- DO-213AC, MINI-MELF, SOD-80 Tape & Reel (TR) Obsolete Schottky 60 V 410 mV @ 1 mA Small Signal =< 200mA (Io), Any Speed 1 ns 200 nA @ 50 V 2pF @ 0V, 1MHz 30mA Automotive AEC-Q101 Surface Mount SOD-80 MiniMELF 125°C (Max)
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