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制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
LFUSCD15120A

LFUSCD15120A

DIODE SIL CARB 1.2KV 15A TO220AC

Littelfuse Inc.

4,573 -
LFUSCD15120A

数据表

- TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 1.7 V @ 15 A No Recovery Time > 500mA (Io) 0 ns 375 µA @ 1200 V 750pF @ 1V, 1MHz 15A - - Through Hole TO-220AC 175°C (Max)
LFUSCD20065B

LFUSCD20065B

DIODE SIL CARB 650V 20A TO247AD

Littelfuse Inc.

7,813 -
LFUSCD20065B

数据表

- TO-247-3 Tube Active SiC (Silicon Carbide) Schottky 650 V 1.7 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 500 µA @ 650 V 580pF @ 1V, 1MHz 20A - - Through Hole TO-247AD 175°C (Max)
IDC51D120T6MX1SA3

IDC51D120T6MX1SA3

DIODE GP 1.2KV 100A WAFER

Infineon Technologies

7,346 -
IDC51D120T6MX1SA3

数据表

- Die Bulk Active Standard 1200 V 2.05 V @ 100 A Standard Recovery >500ns, > 200mA (Io) - 18 µA @ 1200 V - 100A - - Surface Mount Sawn on foil -40°C ~ 175°C
SIDC06D120H8X1SA2

SIDC06D120H8X1SA2

DIODE GP 1.2KV 7.5A WAFER

Infineon Technologies

3,294 -
SIDC06D120H8X1SA2

数据表

- Die Bulk Active Standard 1200 V 1.97 V @ 7.5 A Standard Recovery >500ns, > 200mA (Io) - 27 µA @ 1200 V - 7.5A - - Surface Mount Sawn on foil -40°C ~ 175°C
UH6PJ-M3/87A

UH6PJ-M3/87A

DIODE GEN PURP 600V 6A TO277A

Vishay General Semiconductor - Diodes Division

5,291 -
UH6PJ-M3/87A

数据表

eSMP® TO-277, 3-PowerDFN Tape & Reel (TR) Obsolete Standard 600 V 3 V @ 6 A Fast Recovery =< 500ns, > 200mA (Io) 45 ns 10 µA @ 600 V - 6A - - Surface Mount TO-277A (SMPC) -55°C ~ 175°C
SMAJ5817E3/TR13

SMAJ5817E3/TR13

DIODE SCHOTTKY 1A 20V SMAJ

Microchip Technology

4,558 -
SMAJ5817E3/TR13

数据表

* - Tape & Reel (TR) Active - - - - - - - - - - - - -
SMAJ5818E3/TR13

SMAJ5818E3/TR13

DIODE SCHOTTKY 1A 30V SMAJ

Microchip Technology

4,920 -
SMAJ5818E3/TR13

数据表

* - Tape & Reel (TR) Active - - - - - - - - - - - - -
SMAJ5819E3/TR13

SMAJ5819E3/TR13

DIODE SCHOTTKY 1A 40V SMAJ

Microchip Technology

8,923 -
SMAJ5819E3/TR13

数据表

* - Tape & Reel (TR) Active - - - - - - - - - - - - -
SIDC08D120H8X1SA1

SIDC08D120H8X1SA1

DIODE GEN PURP 1.2KV 150A WAFER

Infineon Technologies

8,432 -
SIDC08D120H8X1SA1

数据表

- - Bulk Active Standard 1200 V 1.41 V @ 45 A Standard Recovery >500ns, > 200mA (Io) - 27 µA @ 1200 V - 150A - - - - -40°C ~ 175°C
DB3Y313KEL

DB3Y313KEL

DIODE SCHOTTKY 30V 200MA SOT23-3

Panasonic Electronic Components

3,858 -
DB3Y313KEL

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete Schottky 30 V 550 mV @ 200 mA Small Signal =< 200mA (Io), Any Speed 1.5 ns 50 µA @ 30 V 3.8pF @ 10V, 1MHz 200mA - - Surface Mount SOT-23-3 125°C (Max)
BAS19-HE3-08

BAS19-HE3-08

DIODE GP 100V 200MA SOT23-3

Vishay General Semiconductor - Diodes Division

6,523 -
BAS19-HE3-08

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete Standard 100 V 1.25 V @ 200 mA Small Signal =< 200mA (Io), Any Speed 50 ns 100 nA @ 100 V 5pF @ 0V, 1MHz 200mA Automotive AEC-Q101 Surface Mount SOT-23-3 -55°C ~ 150°C
MSE07PDHM3/89A

MSE07PDHM3/89A

DIODE GP 200V 700MA MICROSMP

Vishay General Semiconductor - Diodes Division

3,039 -
MSE07PDHM3/89A

数据表

- DO-219AD Tape & Reel (TR) Active Standard 200 V 1.08 V @ 700 mA Standard Recovery >500ns, > 200mA (Io) 780 ns 1 µA @ 200 V - 700mA Automotive AEC-Q101 Surface Mount DO-219AD (MicroSMP) -55°C ~ 175°C
RB521ES-30T15R

RB521ES-30T15R

DIODE SCHOTTKY 30V 100MA SMD0603

Rohm Semiconductor

9,626 -
RB521ES-30T15R

数据表

- 2-SMD, No Lead Tape & Reel (TR) Obsolete Schottky 30 V 370 mV @ 10 mA Small Signal =< 200mA (Io), Any Speed - 7 µA @ 10 V - 100mA - - Surface Mount SMD0603 150°C (Max)
2A05G A0G

2A05G A0G

DIODE GEN PURP 600V 2A DO204AC

Taiwan Semiconductor Corporation

5,014 -
2A05G A0G

数据表

- DO-204AC, DO-15, Axial Cut Tape (CT) Active Standard 600 V 1 V @ 2 A Fast Recovery =< 500ns, > 200mA (Io) - 5 µA @ 600 V 15pF @ 4V, 1MHz 2A - - Through Hole DO-204AC (DO-15) -55°C ~ 150°C
SR106 A0G

SR106 A0G

DIODE SCHOTTKY 60V 1A DO204AL

Taiwan Semiconductor Corporation

2,192 -
SR106 A0G

数据表

- DO-204AL, DO-41, Axial Cut Tape (CT) Active Schottky 60 V 700 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) - 500 µA @ 60 V - 1A - - Through Hole DO-204AL (DO-41) -55°C ~ 150°C
CDBVRL240-HF

CDBVRL240-HF

DIODE SCHOTTKY 40V 2A WBFBP-02L

Comchip Technology

9,919 -
CDBVRL240-HF

数据表

- 0603 (1608 Metric) Tape & Reel (TR) Active Schottky 40 V 580 mV @ 2 A Fast Recovery =< 500ns, > 200mA (Io) - 50 µA @ 40 V 180pF @ 0V, 1MHz 2A - - Surface Mount WBFBP-02L 125°C
SIDC81D120H8X1SA3

SIDC81D120H8X1SA3

DIODE GEN PURP 1.2KV 150A WAFER

Infineon Technologies

6,278 -
SIDC81D120H8X1SA3

数据表

- - Bulk Active Standard 1200 V 2.15 V @ 150 A Standard Recovery >500ns, > 200mA (Io) - 27 µA @ 1200 V - 150A - - - - -40°C ~ 175°C
IRD3CH101DB6

IRD3CH101DB6

DIODE GEN PURP 1.2KV 200A DIE

Infineon Technologies

4,094 -
IRD3CH101DB6

数据表

- Die Bulk Obsolete Standard 1200 V 2.7 V @ 200 A Fast Recovery =< 500ns, > 200mA (Io) 360 ns 100 µA @ 1200 V - 200A - - Surface Mount Die -40°C ~ 175°C
BAT54QCZ

BAT54QCZ

DIODE SCHOT 30V 200MA DFN1412D-3

Nexperia USA Inc.

9,021 -
BAT54QCZ

数据表

- 3-XDFN Exposed Pad Tape & Reel (TR) Obsolete Schottky 30 V 800 mV @ 100 mA Small Signal =< 200mA (Io), Any Speed 5 ns 2 µA @ 25 V 10pF @ 1V, 1MHz 200mA - - Surface Mount, Wettable Flank DFN1412D-3 150°C
BAS21QCZ

BAS21QCZ

DIODE GP 200V 250MA DFN1412D-3

Nexperia USA Inc.

5,346 -
BAS21QCZ

数据表

- 3-XDFN Exposed Pad Tape & Reel (TR) Obsolete Standard 200 V 1.25 V @ 200 mA Fast Recovery =< 500ns, > 200mA (Io) 50 ns 100 nA @ 200 V 5pF @ 0V, 1MHz 250mA - - Surface Mount, Wettable Flank DFN1412D-3 150°C
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