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| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)(最大值) | 电压 - 正向 (Vf)(最大值)@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流(Io) | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SF62G-TPDIODE GEN PURP 100V 6A DO201AD |
4,661 | - |
|
数据表 |
- | DO-201AD, Axial | Tape & Reel (TR) | Not For New Designs | Standard | 100 V | 975 mV @ 6 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 5 µA @ 100 V | 120pF @ 4V, 1MHz | 6A | - | - | Through Hole | DO-201AD | -55°C ~ 150°C |
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SF63G-TPDIODE GEN PURP 150V 6A DO201AD |
8,292 | - |
|
数据表 |
- | DO-201AD, Axial | Tape & Reel (TR) | Not For New Designs | Standard | 150 V | 975 mV @ 6 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 5 µA @ 150 V | 120pF @ 4V, 1MHz | 6A | - | - | Through Hole | DO-201AD | -55°C ~ 150°C |
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IDH12G65C5XKSA1DIODE SIL CARB 650V 12A TO220-2 |
5,253 | - |
|
数据表 |
CoolSiC™+ | TO-220-2 | Tube | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 650 V | 1.7 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 190 µA @ 650 V | 360pF @ 1V, 1MHz | 12A | - | - | Through Hole | PG-TO220-2 | -55°C ~ 175°C |
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SF64G-TPDIODE GEN PURP 200V 6A DO201AD |
9,476 | - |
|
数据表 |
- | DO-201AD, Axial | Tape & Reel (TR) | Active | Standard | 200 V | 975 mV @ 6 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 5 µA @ 200 V | 120pF @ 4V, 1MHz | 6A | - | - | Through Hole | DO-201AD | -55°C ~ 150°C |
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IDK02G65C5XTMA1DIODE SIL CARB 650V 2A TO263-2 |
4,519 | - |
|
数据表 |
CoolSiC™+ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 650 V | 1.8 V @ 2 A | No Recovery Time > 500mA (Io) | 0 ns | 330 µA @ 650 V | 70pF @ 1V, 1MHz | 2A | - | - | Surface Mount | PG-TO263-2 | -55°C ~ 175°C |
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SF66G-TPDIODE GEN PURP 400V 6A DO201AD |
4,506 | - |
|
数据表 |
- | DO-201AD, Axial | Tape & Reel (TR) | Active | Standard | 400 V | 1.3 V @ 6 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 5 µA @ 400 V | 90pF @ 4V, 1MHz | 6A | - | - | Through Hole | DO-201AD | -55°C ~ 150°C |
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IDK04G65C5XTMA1DIODE SIL CARB 650V 4A TO263-2 |
4,835 | - |
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数据表 |
CoolSiC™+ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 650 V | 1.8 V @ 4 A | No Recovery Time > 500mA (Io) | 0 ns | 670 µA @ 650 V | 130pF @ 1V, 1MHz | 4A | - | - | Surface Mount | PG-TO263-2 | -55°C ~ 175°C |
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SF67G-TPInterface |
8,104 | - |
|
数据表 |
- | DO-201AD, Axial | Bulk | Not For New Designs | Standard | 500 V | 1.7 V @ 6 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 5 µA @ 500 V | 90pF @ 4V, 1MHz | 6A | - | - | Through Hole | DO-201AD | -55°C ~ 150°C |
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IDK06G65C5XTMA1DIODE SIL CARB 650V 6A TO263-2 |
8,619 | - |
|
数据表 |
CoolSiC™+ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 650 V | 1.8 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 1.1 mA @ 650 V | 190pF @ 1V, 1MHz | 6A | - | - | Surface Mount | PG-TO263-2 | -55°C ~ 175°C |
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SF68G-TPInterface |
9,000 | - |
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数据表 |
- | DO-201AD, Axial | Bulk | Active | Standard | 600 V | 1.7 V @ 6 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 5 µA @ 600 V | 90pF @ 4V, 1MHz | 6A | - | - | Through Hole | DO-201AD | -55°C ~ 150°C |
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IDL04G65C5XUMA1DIODE SIL CARBIDE 650V 4A VSON-4 |
2,590 | - |
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数据表 |
CoolSiC™+ | 4-PowerTSFN | Tape & Reel (TR) | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 650 V | 1.7 V @ 4 A | No Recovery Time > 500mA (Io) | 0 ns | 70 µA @ 650 V | 130pF @ 1V, 1MHz | 4A | - | - | Surface Mount | PG-VSON-4 | -55°C ~ 175°C |
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SR5010HL-TPInterface |
2,689 | - |
|
数据表 |
- | DO-201AD, Axial | Bulk | Active | Schottky | 100 V | 780 mV @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 20 µA @ 100 V | 200pF @ 4V, 1MHz | 5A | - | - | Through Hole | DO-201AD | -55°C ~ 175°C |
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IDL06G65C5XUMA1DIODE SIL CARBIDE 650V 6A VSON-4 |
9,095 | - |
|
数据表 |
CoolSiC™+ | 4-PowerTSFN | Tape & Reel (TR) | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 650 V | 1.7 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 110 µA @ 650 V | 190pF @ 1V, 1MHz | 6A | - | - | Surface Mount | PG-VSON-4 | -55°C ~ 150°C |
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V10P8-M3/87ADIODE SCHOTTKY 80V 10A TO277A |
8,446 | - |
|
数据表 |
eSMP®, TMBS® | TO-277, 3-PowerDFN | Tape & Reel (TR) | Active | Schottky | 80 V | 680 mV @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 800 µA @ 80 V | - | 10A | - | - | Surface Mount | TO-277A (SMPC) | -40°C ~ 150°C |
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IDL08G65C5XUMA1DIODE SIL CARBIDE 650V 8A VSON-4 |
3,703 | - |
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数据表 |
CoolSiC™+ | 4-PowerTSFN | Tape & Reel (TR) | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 650 V | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 140 µA @ 650 V | 250pF @ 1V, 1MHz | 8A | - | - | Surface Mount | PG-VSON-4 | -55°C ~ 150°C |
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BAT1000Q-7-FDIODE SCHOTTKY 40V 1A SOT23-3 3K |
8,162 | - |
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数据表 |
- | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Active | Schottky | 40 V | 500 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 12 ns | 100 µA @ 30 V | 175pF @ 0V, 1MHz | 1A | Automotive | AEC-Q101 | Surface Mount | SOT-23-3 | -40°C ~ 125°C |
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IDL12G65C5XUMA1DIODE SIL CARB 650V 12A VSON-4 |
5,233 | - |
|
数据表 |
CoolSiC™+ | 4-PowerTSFN | Tape & Reel (TR) | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 650 V | 1.7 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 190 µA @ 650 V | 360pF @ 1V, 1MHz | 12A | - | - | Surface Mount | PG-VSON-4 | -55°C ~ 150°C |
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IDP1301GXUMA1DIODE GEN PURP DSO-19 |
5,055 | - |
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数据表 |
* | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IDW30E60AFKSA1DIODE GEN PURP 600V 60A TO247-3 |
7,578 | - |
|
数据表 |
- | TO-247-3 | Tube | Discontinued at Digi-Key | Standard | 600 V | 2 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 143 ns | 40 µA @ 600 V | - | 60A | - | - | Through Hole | PG-TO247-3 | -40°C ~ 175°C |
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FR601DIODE GEN PURP 50V 6A R-6 |
4,726 | - |
|
数据表 |
- | R-6, Axial | Tape & Reel (TR) | Obsolete | Standard | 50 V | 1.2 V @ 6 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 10 µA @ 50 V | 100pF @ 4V, 1MHz | 6A | - | - | Through Hole | R-6 | -65°C ~ 125°C |
