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| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)（最大值） | 电压 - 正向 (Vf)（最大值）@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流（Io） | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
GP3D010A120BDIODE SIL CARB 1.2KV 10A TO247-2 SemiQ |
4,098 | - |
|
数据表 |
Amp+™ | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 1.65 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 1200 V | 608pF @ 1V, 1MHz | 10A | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
|
GP3D015A120BDIODE SIL CARB 1.2KV 15A TO247-2 SemiQ |
7,032 | - |
|
数据表 |
Amp+™ | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 1.6 V @ 15 A | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 1200 V | 962pF @ 1V, 1MHz | 15A | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
GP3D006A065ADIODE SIL CARB 650V 20A TO220-2L SemiQ |
50 | - |
|
数据表 |
Amp+™ | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 1.55 V @ 6 A | No Recovery Time > 500mA (Io) | - | 15 µA @ 650 V | 229pF @ 1V, 1MHz | 20A | - | - | Through Hole | TO-220-2L | -55°C ~ 175°C |
|
GP3D040A065UDIODE SIL CARB 650V 40A TO247-3 SemiQ |
3,520 | - |
|
数据表 |
Amp+™ | TO-247-3 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 1.7 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 835pF @ 1V, 1MHz | 40A | - | - | Through Hole | TO-247-3 | -55°C ~ 175°C |
|
|
GP3D020A170BDIODE SIL CARB 1.7KV 67A TO247-2 SemiQ |
39 | - |
|
数据表 |
Amp+™ | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1700 V | 1.65 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 80 µA @ 1700 V | 1403pF @ 1V, 1MHz | 67A | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
|
GP3D020A120BDIODE SIL CARB 1.2KV 20A TO247-2 SemiQ |
4,590 | - |
|
数据表 |
Amp+™ | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 1.65 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 1200 V | 1179pF @ 1V, 1MHz | 20A | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
GP3D050A065BDIODE SIL CARB 650V 135A TO247-2 SemiQ |
6,200 | - |
|
数据表 |
Amp+™ | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 1.6 V @ 50 A | No Recovery Time > 500mA (Io) | - | 125 µA @ 650 V | 1946pF @ 1V, 1MHz | 135A | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
|
GP3D050A120BDIODE SIL CARB 1.2KV 50A TO247-2 SemiQ |
44 | - |
|
数据表 |
Amp+™ | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 1.7 V @ 50 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 1200 V | 3040pF @ 1V, 1MHz | 50A | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
|
GP3D020A065BDIODE SIL CARB 650V 20A TO247-2 SemiQ |
99 | - |
|
数据表 |
Amp+™ | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 1.7 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 835pF @ 1V, 1MHz | 20A | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
|
GP3D030A120BDIODE SIL CARB 1.2KV 30A TO247-2 SemiQ |
9,900 | - |
|
数据表 |
Amp+™ | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 1.7 V @ 30 A | No Recovery Time > 500mA (Io) | 0 ns | 60 µA @ 1200 V | 1762pF @ 1V, 1MHz | 30A | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
