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制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
GP3D010A120A

GP3D010A120A

DIODE SIL CARB 1.2KV 10A TO220-2

SemiQ

6 -
GP3D010A120A

数据表

Amp+™ TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 1.65 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 20 µA @ 1200 V 608pF @ 1V, 1MHz 10A - - Through Hole TO-220-2 -55°C ~ 175°C
GP3D015A120A

GP3D015A120A

DIODE SIL CARB 1.2KV 15A TO220-2

SemiQ

10 -
GP3D015A120A

数据表

Amp+™ TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 1.6 V @ 15 A No Recovery Time > 500mA (Io) 0 ns 30 µA @ 1200 V 962pF @ 1V, 1MHz 15A - - Through Hole TO-220-2 -55°C ~ 175°C
GP3D005A170B

GP3D005A170B

DIODE SIL CARB 1.7KV 21A TO247-2

SemiQ

1,517 -
GP3D005A170B

数据表

Amp+™ TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1700 V 1.65 V @ 5 A No Recovery Time > 500mA (Io) 0 ns 20 µA @ 1700 V 347pF @ 1V, 1MHz 21A - - Through Hole TO-247-2 -55°C ~ 175°C
GP2D008A065A

GP2D008A065A

DIODE SIL CARB 650V 8A TO220-2

SemiQ

3,519 -
GP2D008A065A

数据表

- TO-220-2 Tube Discontinued at Digi-Key SiC (Silicon Carbide) Schottky 650 V 1.45 V @ 30 A No Recovery Time > 500mA (Io) 0 ns 9 µA @ 650 V - 8A - - Through Hole TO-220-2 -
GP3D010A170B

GP3D010A170B

DIODE SIL CARB 1.7KV 39A TO247-2

SemiQ

360 -
GP3D010A170B

数据表

Amp+™ TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1700 V 1.65 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 1700 V 699pF @ 1V, 1MHz 39A - - Through Hole TO-247-2 -55°C ~ 175°C
GP2D050A120B

GP2D050A120B

DIODE SIL CARB 1.2KV 50A TO247-2

SemiQ

8,045 -
GP2D050A120B

数据表

Amp+™ TO-247-2 Tube Discontinued at Digi-Key SiC (Silicon Carbide) Schottky 1200 V 1.8 V @ 50 A No Recovery Time > 500mA (Io) 0 ns 100 µA @ 1200 V 3174pF @ 1V, 1MHz 50A - - Through Hole TO-247-2 -55°C ~ 175°C
GP2D003A065A

GP2D003A065A

DIODE SIL CARB 650V 3A TO220-2

SemiQ

7,306 -
GP2D003A065A

数据表

Amp+™ TO-220-2 Tube Obsolete SiC (Silicon Carbide) Schottky 650 V 1.65 V @ 3 A No Recovery Time > 500mA (Io) 0 ns 30 µA @ 650 V 158pF @ 1V, 1MHz 3A - - Through Hole TO-220-2 -55°C ~ 175°C
GP2D005A120A

GP2D005A120A

DIODE SIL CARB 1.2KV 5A TO220-2

SemiQ

9,665 -
GP2D005A120A

数据表

Amp+™ TO-220-2 Tube Discontinued at Digi-Key SiC (Silicon Carbide) Schottky 1200 V 1.8 V @ 5 A No Recovery Time > 500mA (Io) 0 ns 10 µA @ 1200 V 317pF @ 1V, 1MHz 5A - - Through Hole TO-220-2 -55°C ~ 175°C
GP2D005A120C

GP2D005A120C

DIODE SIL CARB 1.2KV 5A TO252-2L

SemiQ

8,410 -
GP2D005A120C

数据表

Amp+™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Discontinued at Digi-Key SiC (Silicon Carbide) Schottky 1200 V 1.8 V @ 5 A No Recovery Time > 500mA (Io) 0 ns 10 µA @ 1200 V 317pF @ 1V, 1MHz 5A - - Surface Mount TO-252-2L (DPAK) -55°C ~ 175°C
GP2D005A170B

GP2D005A170B

DIODE SIL CARB 1.7KV 5A TO247-2

SemiQ

3,053 -
GP2D005A170B

数据表

Amp+™ TO-247-2 Tube Discontinued at Digi-Key SiC (Silicon Carbide) Schottky 1700 V 1.75 V @ 5 A No Recovery Time > 500mA (Io) 0 ns 10 µA @ 1700 V 406pF @ 1V, 1MHz 5A - - Through Hole TO-247-2 -55°C ~ 175°C
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