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| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)（最大值） | 电压 - 正向 (Vf)（最大值）@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流（Io） | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
GP2D003A060CDIODE SIL CARB 600V 3A TO252-2L SemiQ |
8,478 | - |
|
数据表 |
Amp+™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 600 V | 1.65 V @ 3 A | No Recovery Time > 500mA (Io) | 0 ns | 10 µA @ 600 V | 158pF @ 1V, 1MHz | 3A | - | - | Surface Mount | TO-252-2L (DPAK) | -55°C ~ 175°C |
|
GP3D008A065ADIODE SIL CARB 650V 8A TO220-2 SemiQ |
7,088 | - |
|
数据表 |
Amp+™ | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 1.6 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 650 V | 336pF @ 1V, 1MHz | 8A | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
|
GP3D010A065ADIODE SIL CARB 650V 10A TO220-2 SemiQ |
8,334 | - |
|
数据表 |
Amp+™ | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 1.6 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 25 µA @ 650 V | 419pF @ 1V, 1MHz | 10A | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
GP3D010A065BDIODE SIL CARB 650V 10A TO247-2 SemiQ |
7,555 | - |
|
数据表 |
Amp+™ | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 1.6 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 25 µA @ 650 V | 419pF @ 1V, 1MHz | 10A | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
|
GP3D012A065ADIODE SIL CARB 650V 12A TO220-2 SemiQ |
6,993 | - |
|
数据表 |
Amp+™ | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 1.5 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 650 V | 572pF @ 1V, 1MHz | 12A | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
GP3D008A065DDIODE SIC 650V 8A TO263-2L SemiQ |
3,278 | - |
|
数据表 |
- | - | Tape & Reel (TR) | Active | - | 650 V | - | - | - | - | - | 8A | - | - | - | - | - |
|
GP3D010A065CDIODE SILICON CARBIDE SemiQ |
8,544 | - |
|
数据表 |
* | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
GP3D010A065DDIODE SIC 650V 8A TO263-2L SemiQ |
5,502 | - |
|
数据表 |
- | - | Tape & Reel (TR) | Active | - | 650 V | - | - | - | - | - | 10A | - | - | - | - | - |
|
|
GP3D012A065BDIODE SIL CARB 650V 12A TO247-2 SemiQ |
2 | - |
|
数据表 |
Amp+™ | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 1.5 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 650 V | 572pF @ 1V, 1MHz | 12A | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
|
GP3D020A065ADIODE SIL CARB 650V 20A TO220-2 SemiQ |
8,484 | - |
|
数据表 |
Amp+™ | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 1.65 V @ 30 A | No Recovery Time > 500mA (Io) | - | 75 µA @ 650 V | 1247pF @ 1V, 1MHz | 20A | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
