ROHM Semiconductor|单个二极管 - 页 129

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	技术	电压 - 直流反向 (Vr)（最大值）	电压 - 正向 (Vf)（最大值）@ If	速度	反向恢复时间 (trr)	电流 - 反向漏电 @ Vr	电容 @ Vr, F	电流 - 平均整流（Io）	等级	认证	安装类型	供应商设备封装	工作温度 - 结点
RFN20TJ6SFHGC9 DIODE GP 600V 20A TO220ACFP Rohm Semiconductor	978	-	询价单	数据表	-	TO-220-2 Full Pack	Tube	Active	Standard	600 V	1.55 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	140 ns	10 µA @ 600 V	-	20A	Automotive	AEC-Q101	Through Hole	TO-220ACFP	150°C
RFN20NS3STL DIODE GEN PURP 350V 20A LPDS Rohm Semiconductor	784	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	Standard	350 V	1.35 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 350 V	-	20A	-	-	Surface Mount	LPDS	150°C
RFS30TZ6SGC13 DIODE GEN PURP 650V 30A TO247GE Rohm Semiconductor	584	-	询价单	数据表	-	TO-247-2	Tube	Not For New Designs	Standard	650 V	2.3 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	5 µA @ 650 V	-	30A	-	-	Through Hole	TO-247GE	175°C
RFUH20TF6SC9 DIODE GEN PURP 600V 20A TO220NFM Rohm Semiconductor	932	-	询价单	数据表	-	TO-220-2 Full Pack	Tube	Active	Standard	600 V	2.8 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 600 V	-	20A	-	-	Through Hole	TO-220NFM	150°C
SCS304AJTLL DIODE SIL CARBIDE 650V 4A LPTL Rohm Semiconductor	974	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Not For New Designs	SiC (Silicon Carbide) Schottky	650 V	1.5 V @ 4 A	No Recovery Time > 500mA (Io)	0 ns	20 µA @ 650 V	200pF @ 1V, 1MHz	4A	-	-	Surface Mount	LPTL	175°C (Max)
RFV30TG6SGC9 DIODE GP 600V 30A TO220ACFP Rohm Semiconductor	822	-	询价单	数据表	-	TO-220-2	Tube	Active	Standard	600 V	2.8 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	60 ns	10 µA @ 600 V	-	30A	-	-	Through Hole	TO-220ACFP	150°C
SCS308AJTLL DIODE SIL CARBIDE 650V 8A LPTL Rohm Semiconductor	915	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	1.5 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	400pF @ 1V, 1MHz	8A	-	-	Surface Mount	LPTL	175°C (Max)
SCS220AGC17 DIODE SIC 650V 20A TO220ACFP Rohm Semiconductor	706	-	询价单	数据表	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	1.55 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	400 µA @ 600 V	730pF @ 1V, 1MHz	20A	-	-	Through Hole	TO-220ACFP	175°C
SCS206AJHRTLL DIODE SIL CARB 650V 6A TO263AB Rohm Semiconductor	2,756	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	1.55 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	120 µA @ 600 V	219pF @ 1V, 1MHz	6A	Automotive	AEC-Q101	Surface Mount	TO-263AB	175°C (Max)
SCS310AJTLL DIODE SIL CARBIDE 650V 10A LPTL Rohm Semiconductor	518	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	1.5 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	500pF @ 1V, 1MHz	10A	-	-	Surface Mount	LPTL	175°C (Max)

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