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| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)（最大值） | 电压 - 正向 (Vf)（最大值）@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流（Io） | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SCS312AJTLLDIODE SIL CARBIDE 650V 12A LPTL Rohm Semiconductor |
849 | - |
|
数据表 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 1.5 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 60 µA @ 650 V | 600pF @ 1V, 1MHz | 12A | - | - | Surface Mount | LPTL | 175°C (Max) |
|
RFL30TZ6SGC13DIODE GEN PURP 650V 30A TO247GE Rohm Semiconductor |
624 | - |
|
数据表 |
- | TO-247-2 | Tube | Not For New Designs | Standard | 650 V | 1.5 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 55 ns | 5 µA @ 650 V | - | 30A | - | - | Through Hole | TO-247GE | 175°C |
|
SCS208AJHRTLLDIODE SIL CARB 650V 8A TO263AB Rohm Semiconductor |
932 | - |
|
数据表 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 1.55 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 160 µA @ 600 V | 291pF @ 1V, 1MHz | 8A | Automotive | AEC-Q101 | Surface Mount | TO-263AB | 175°C (Max) |
|
RB531ES-30T15RDIODE SCHOTTKY 30V 100MA SMD0603 Rohm Semiconductor |
2,330 | - |
|
数据表 |
- | 0201 (0603 Metric) | Tape & Reel (TR) | Obsolete | Schottky | 30 V | 500 mV @ 100 mA | Small Signal =< 200mA (Io), Any Speed | - | 50 µA @ 30 V | - | 100mA | - | - | Surface Mount | DSN0603-2, SOD-962, SMD0603 | 150°C (Max) |
|
|
DA2J10100LDIODE GEN PURP 80V 100MA SMINI2 Rohm Semiconductor |
8,664 | - |
|
数据表 |
* | - | Cut Tape (CT) | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
SCS315AJTLLDIODE SIL CARBIDE 650V 15A LPTL Rohm Semiconductor |
400 | - |
|
数据表 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 1.5 V @ 15 A | No Recovery Time > 500mA (Io) | 0 ns | 75 µA @ 650 V | 750pF @ 1V, 1MHz | 15A | - | - | Surface Mount | LPTL | 175°C (Max) |
|
|
SCS210AJHRTLLDIODE SIL CARB 650V 10A TO263AB Rohm Semiconductor |
894 | - |
|
数据表 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 1.55 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 600 V | 365pF @ 1V, 1MHz | 10A | Automotive | AEC-Q101 | Surface Mount | TO-263AB | 175°C (Max) |
|
|
RFL60TZ6SGC13DIODE GEN PURP 650V 60A TO247GE Rohm Semiconductor |
601 | - |
|
数据表 |
- | TO-247-2 | Tube | Not For New Designs | Standard | 650 V | 1.5 V @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 10 µA @ 650 V | - | 60A | - | - | Through Hole | TO-247GE | 175°C |
|
SCS215KGC17DIODE SIC 1.2KV 15A TO220ACFP Rohm Semiconductor |
1,996 | - |
|
数据表 |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 1.6 V @ 15 A | No Recovery Time > 500mA (Io) | 0 ns | 300 µA @ 1200 V | 790pF @ 1V, 1MHz | 15A | - | - | Through Hole | TO-220ACFP | 175°C |
|
SCS215AEGC11DIODE SIL CARBIDE 650V 15A TO247 Rohm Semiconductor |
293 | - |
|
数据表 |
- | TO-247-3 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 1.55 V @ 15 A | No Recovery Time > 500mA (Io) | 0 ns | 300 µA @ 600 V | 550pF @ 1V, 1MHz | 15A | - | - | Through Hole | TO-247 | 175°C |
