| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)(最大值) | 电压 - 正向 (Vf)(最大值)@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流(Io) | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
RFS60TZ6SGC13DIODE GEN PURP 650V 60A TO247GE Rohm Semiconductor |
566 | - |
|
数据表 |
- | TO-247-2 | Tube | Not For New Designs | Standard | 650 V | 2.3 V @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | 55 ns | 10 µA @ 650 V | - | 60A | - | - | Through Hole | TO-247GE | 175°C |
|
SCS210KGC17DIODE SIC 1.2KV 10A TO220ACFP Rohm Semiconductor |
397 | - |
|
数据表 |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 1.6 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 1200 V | 550pF @ 1V, 1MHz | 10A | - | - | Through Hole | TO-220ACFP | 175°C |
|
SCS220AEGC11DIODE SIL CARBIDE 650V 20A TO247 Rohm Semiconductor |
345 | - |
|
数据表 |
- | TO-247-3 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 1.55 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 400 µA @ 600 V | 730pF @ 1V, 1MHz | 20A | - | - | Through Hole | TO-247 | 175°C |
|
RB151L-40TE25DIODE SCHOTTKY 40V PMDS Rohm Semiconductor |
6,532 | - |
|
数据表 |
- | DO-214AC, SMA | Tape & Reel (TR) | Not For New Designs | Schottky | 40 V | - | Fast Recovery =< 500ns, > 200mA (Io) | - | - | - | - | - | - | Surface Mount | PMDS | - |
|
SCS215AJHRTLLDIODE SIL CARB 650V 15A TO263AB Rohm Semiconductor |
2,008 | - |
|
数据表 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 1.55 V @ 15 A | No Recovery Time > 500mA (Io) | 0 ns | 300 µA @ 600 V | 550pF @ 1V, 1MHz | 15A | Automotive | AEC-Q101 | Surface Mount | TO-263AB | 175°C (Max) |
|
SCS220AJHRTLLDIODE SIL CARB 650V 20A TO263AB Rohm Semiconductor |
2,697 | - |
|
数据表 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 1.55 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 400 µA @ 600 V | 730pF @ 1V, 1MHz | 20A | Automotive | AEC-Q101 | Surface Mount | TO-263AB | 175°C (Max) |
|
SCS220KGC17DIODE SIC 1.2KV 20A TO220ACFP Rohm Semiconductor |
991 | - |
|
数据表 |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 1.6 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 400 µA @ 1200 V | 1050pF @ 1V, 1MHz | 20A | - | - | Through Hole | TO-220ACFP | 175°C |
|
RBLQ3LAM10TRTRENCH MOS STRUCTURE, 100V, 3A, Rohm Semiconductor |
2,293 | - |
|
数据表 |
- | SOD-128 | Tape & Reel (TR) | Obsolete | Schottky | 100 V | 640 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 30 µA @ 100 V | 140pF @ 4V, 1MHz | 3A | - | - | Surface Mount | PMDTM | 175°C |
|
RB541VM-30FHTE-17DIODE SCHOTTKY 30V 200MA UMD2 Rohm Semiconductor |
4 | - |
|
数据表 |
- | SC-90, SOD-323F | Tape & Reel (TR) | Obsolete | Schottky | 30 V | 640 mV @ 200 mA | Small Signal =< 200mA (Io), Any Speed | - | 45 µA @ 30 V | - | 200mA | Automotive | AEC-Q101 | Surface Mount | UMD2 | 125°C (Max) |
|
RSX205L-30TE25DIODE SCHOTTKY 30V 2A PMDS Rohm Semiconductor |
4 | - |
|
数据表 |
- | DO-214AC, SMA | Tape & Reel (TR) | Not For New Designs | Schottky | 30 V | 490 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200 µA @ 30 V | - | 2A | - | - | Surface Mount | PMDS | 150°C |