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制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
VS-18TQ040-N3

VS-18TQ040-N3

DIODE SCHOTTKY 40V 18A TO220AC

Vishay General Semiconductor - Diodes Division

3,547 -
VS-18TQ040-N3

数据表

- TO-220-2 Tube Obsolete Schottky 40 V 720 mV @ 36 A Fast Recovery =< 500ns, > 200mA (Io) - 2.5 mA @ 40 V 1400pF @ 5V, 1MHz 18A - - Through Hole TO-220AC -55°C ~ 175°C
VS-19TQ015-N3

VS-19TQ015-N3

DIODE SCHOTTKY 15V 19A TO220AC

Vishay General Semiconductor - Diodes Division

4,567 -
VS-19TQ015-N3

数据表

- TO-220-2 Tube Obsolete Schottky 15 V 460 mV @ 38 A Fast Recovery =< 500ns, > 200mA (Io) - 10.5 mA @ 15 V 2000pF @ 5V, 1MHz 19A - - Through Hole TO-220AC -55°C ~ 125°C
VS-6TQ040-N3

VS-6TQ040-N3

DIODE SCHOTTKY 40V 6A TO220AC

Vishay General Semiconductor - Diodes Division

2,193 -
VS-6TQ040-N3

数据表

- TO-220-2 Tube Obsolete Schottky 40 V 600 mV @ 6 A Fast Recovery =< 500ns, > 200mA (Io) - 800 µA @ 40 V 400pF @ 5V, 1MHz 6A - - Through Hole TO-220AC -55°C ~ 175°C
VS-8ETH03-N3

VS-8ETH03-N3

DIODE GEN PURP 300V 8A TO220AC

Vishay General Semiconductor - Diodes Division

3,266 -
VS-8ETH03-N3

数据表

FRED Pt® TO-220-2 Tube Obsolete Standard 300 V 1.25 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 27 ns 20 µA @ 300 V - 8A - - Through Hole TO-220AC -65°C ~ 175°C
VS-8ETL06-N3

VS-8ETL06-N3

DIODE GEN PURP 600V 8A TO220AC

Vishay General Semiconductor - Diodes Division

7,753 -
VS-8ETL06-N3

数据表

FRED Pt® TO-220-2 Tube Obsolete Standard 600 V 1.05 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 170 ns 5 µA @ 600 V - 8A - - Through Hole TO-220AC -65°C ~ 175°C
VS-8ETU04-N3

VS-8ETU04-N3

DIODE GEN PURP 400V 8A TO220AC

Vishay General Semiconductor - Diodes Division

2,967 -
VS-8ETU04-N3

数据表

FRED Pt® TO-220-2 Tube Obsolete Standard 400 V 1.3 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 43 ns 10 µA @ 400 V - 8A - - Through Hole TO-220AC -65°C ~ 175°C
STPSC6H065DLF

STPSC6H065DLF

DIODE SIL CARB 650V 6A POWERFLAT

STMicroelectronics

10,686 -
STPSC6H065DLF

数据表

ECOPACK®2 8-PowerVDFN Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 1.55 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 60 µA @ 650 V 350pF @ 0V, 1MHz 6A - - Surface Mount PowerFlat™ (8x8) HV -40°C ~ 175°C
VS-60EPU06L-N3

VS-60EPU06L-N3

DIODE GEN PURP 600V 60A TO247AD

Vishay General Semiconductor - Diodes Division

168 -
VS-60EPU06L-N3

数据表

FRED Pt® TO-247-2 Tube Active Standard 600 V 1.68 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 81 ns 50 µA @ 600 V - 60A Automotive AEC-Q101 Through Hole TO-247AD -55°C ~ 175°C
VS-8TQ100-N3

VS-8TQ100-N3

DIODE SCHOTTKY 100V 8A TO220AC

Vishay General Semiconductor - Diodes Division

5,576 -
VS-8TQ100-N3

数据表

- TO-220-2 Tube Obsolete Schottky 100 V 720 mV @ 8 A Fast Recovery =< 500ns, > 200mA (Io) - 550 µA @ 100 V 500pF @ 5V, 1MHz 8A - - Through Hole TO-220AC -55°C ~ 175°C
STTH1512W

STTH1512W

DIODE GEN PURP 1.2KV 15A DO247

STMicroelectronics

380 -
STTH1512W

数据表

- DO-247-2 (Straight Leads) Tube Active Standard 1200 V 2.1 V @ 15 A Fast Recovery =< 500ns, > 200mA (Io) 105 ns 15 µA @ 1200 V - 15A - - Through Hole DO-247 175°C (Max)
VS-20ETF06SLHM3

VS-20ETF06SLHM3

DIODE GEN PURP 600V 20A TO263AB

Vishay General Semiconductor - Diodes Division

5,516 -
VS-20ETF06SLHM3

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 600 V 1.67 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 160 ns 100 µA @ 600 V - 20A Automotive AEC-Q101 Surface Mount TO-263AB (D2PAK) -40°C ~ 150°C
VS-E5TH3012S2L-M3

VS-E5TH3012S2L-M3

DIODE GEN PURP 1.2KV 30A TO263AB

Vishay General Semiconductor - Diodes Division

1,046 -
VS-E5TH3012S2L-M3

数据表

FRED Pt® G5 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 1200 V 2.5 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 113 ns 50 µA @ 1200 V - 30A - - Surface Mount TO-263AB (D2PAK) -55°C ~ 175°C
STTH30R06PI

STTH30R06PI

DIODE GEN PURP 600V 30A DOP3I

STMicroelectronics

2,646 -
STTH30R06PI

数据表

- DOP3I-2 Insulated (Straight Leads) Tube Active Standard 600 V 1.85 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 70 ns 25 µA @ 600 V - 30A - - Through Hole DOP3I 175°C (Max)
VS-8EWS16STR-M3

VS-8EWS16STR-M3

DIODE GEN PURP 1.6KV 8A D-PAK

Vishay General Semiconductor - Diodes Division

3,778 -
VS-8EWS16STR-M3

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active Standard 1600 V 1.1 V @ 8 A Standard Recovery >500ns, > 200mA (Io) - 50 µA @ 1600 V - 8A - - Surface Mount TO-252AA (DPAK) -40°C ~ 150°C
VS-E5TH3012S2LHM3

VS-E5TH3012S2LHM3

DIODE GEN PURP 1.2KV 30A TO263AB

Vishay General Semiconductor - Diodes Division

176 -
VS-E5TH3012S2LHM3

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 1200 V 2.5 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 113 ns 50 µA @ 1200 V - 30A Automotive AEC-Q101 Surface Mount TO-263AB (D2PAK) -55°C ~ 175°C
VS-3C04ET07S2L-M3

VS-3C04ET07S2L-M3

650 V POWER SIC GEN 3 MERGED PIN

Vishay General Semiconductor - Diodes Division

1,518 -
VS-3C04ET07S2L-M3

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 1.5 V @ 4 A No Recovery Time > 500mA (Io) 0 ns 25 µA @ 650 V 175pF @ 1V, 1MHz 4A - - Surface Mount TO-263AB (D2PAK) -55°C ~ 175°C
DHG10I1200PM

DHG10I1200PM

DIODE GP 1.2KV 10A TO220ACFP

IXYS

190 -
DHG10I1200PM

数据表

- TO-220-2 Full Pack, Isolated Tab Tube Active Standard 1200 V 2.69 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) 75 ns 15 µA @ 1200 V - 10A - - Through Hole TO-220ACFP -55°C ~ 150°C
STTH3012WL

STTH3012WL

DIODE GP 1.2KV 30A DO247 LL

STMicroelectronics

569 -
STTH3012WL

数据表

- TO-247-2 Tube Active Standard 1200 V 2.25 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 115 ns 20 µA @ 1200 V - 30A - - Through Hole DO-247 LL 175°C
MSC010SDA070B

MSC010SDA070B

DIODE SIL CARBIDE 700V 24A TO247

Microchip Technology

122 -
MSC010SDA070B

数据表

- TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 700 V 1.8 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 700 V 353pF @ 1V, 1MHz 24A - - Through Hole TO-247 -55°C ~ 175°C
C3D06060G-TR

C3D06060G-TR

DIODE SIL CARB 600V 19A TO263-2

Wolfspeed, Inc.

4,800 -
C3D06060G-TR

数据表

Z-Rec® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 600 V 1.7 V @ 6 A No Recovery Time > 500mA (Io) - 50 µA @ 600 V 295pF @ 0V, 1MHz 19A - - Surface Mount TO-263-2 -55°C ~ 175°C
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