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制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
STBR3008G2Y-TR

STBR3008G2Y-TR

DIODE GEN PURP 800V 30A D2PAK HV

STMicroelectronics

422 -
STBR3008G2Y-TR

数据表

ECOPACK®2 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 800 V 1.1 V @ 30 A Standard Recovery >500ns, > 200mA (Io) - 2 µA @ 800 V - 30A Automotive AEC-Q101 Surface Mount D2PAK HV -40°C ~ 175°C
IDW40E65D1FKSA1

IDW40E65D1FKSA1

DIODE GP 650V 80A TO247-3-1

Infineon Technologies

110 -
IDW40E65D1FKSA1

数据表

- TO-247-3 Tube Active Standard 650 V 1.7 V @ 40 A Fast Recovery =< 500ns, > 200mA (Io) 129 ns 40 µA @ 650 V - 80A - - Through Hole PG-TO247-3-1 -40°C ~ 175°C
VS-EPU6006L-N3

VS-EPU6006L-N3

DIODE GEN PURP 600V 60A TO247AD

Vishay General Semiconductor - Diodes Division

217 -
VS-EPU6006L-N3

数据表

FRED Pt® TO-247-2 Tube Active Standard 600 V 1.5 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 110 ns 30 µA @ 600 V - 60A - - Through Hole TO-247AD -55°C ~ 175°C
STBR3012W

STBR3012W

DIODE GEN PURP 1.2KV 30A DO247

STMicroelectronics

1,666 -
STBR3012W

数据表

- DO-247-2 (Straight Leads) Tube Active Standard 1200 V 1.3 V @ 30 A Standard Recovery >500ns, > 200mA (Io) - 2 µA @ 1200 V - 30A - - Through Hole DO-247 175°C (Max)
SDUR6030W

SDUR6030W

DIODE GEN PURP 300V 60A TO247AC

SMC Diode Solutions

4,362 -
SDUR6030W

数据表

- TO-247-2 Tube Active Standard 300 V 1.4 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 45 ns 10 µA @ 300 V - 60A - - Through Hole TO-247AC -55°C ~ 150°C
JANTX1N3595-1

JANTX1N3595-1

DIODE GEN PURP 125V 150MA DO35

Microchip Technology

174 -
JANTX1N3595-1

数据表

- DO-204AH, DO-35, Axial Bulk Active Standard 125 V 920 mV @ 100 mA Small Signal =< 200mA (Io), Any Speed 3 µs 1 nA @ 125 V - 150mA Military MIL-S-19500-241 Through Hole DO-204AH (DO-35) -65°C ~ 175°C
IDH06G65C5XKSA2

IDH06G65C5XKSA2

DIODE SIL CARB 650V 6A TO220-2-1

Infineon Technologies

1,287 -
IDH06G65C5XKSA2

数据表

CoolSiC™+ TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 1.7 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 110 µA @ 650 V 190pF @ 1V, 1MHz 6A - - Through Hole PG-TO220-2-1 -55°C ~ 175°C
1N4245

1N4245

DIODE GEN PURP 200V 1A AXIAL

Microchip Technology

264 -
1N4245

数据表

- A, Axial Bulk Active Standard 200 V 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 5 µs 1 µA @ 200 V - 1A - - Through Hole A, Axial -65°C ~ 175°C
VS-E5TX3006S2LHM3

VS-E5TX3006S2LHM3

30A, 600V, "X" SERIES GEN 5 FRED

Vishay General Semiconductor - Diodes Division

1,566 -
VS-E5TX3006S2LHM3

数据表

FRED Pt® G5 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 600 V 2.1 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 41 ns 20 µA @ 600 V - 30A Automotive AEC-Q101 Surface Mount TO-263AB (D2PAK) -55°C ~ 175°C
VS-45EPS12L-M3

VS-45EPS12L-M3

DIODE GEN PURP 1.2KV 45A TO247AD

Vishay General Semiconductor - Diodes Division

187 -
VS-45EPS12L-M3

数据表

- TO-247-2 Tube Active Standard 1200 V 1.14 V @ 45 A Standard Recovery >500ns, > 200mA (Io) - 100 µA @ 1200 V - 45A - - Through Hole TO-247AD -40°C ~ 150°C
VS-APU6006-N3

VS-APU6006-N3

DIODE GEN PURP 600V 30A TO247AC

Vishay General Semiconductor - Diodes Division

486 -
VS-APU6006-N3

数据表

FRED Pt® TO-247-3 Tube Active Standard 600 V 2 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 45 ns 30 µA @ 600 V - 30A - - Through Hole TO-247AC -40°C ~ 150°C
UH1DHE3_A/I

UH1DHE3_A/I

DIODE GEN PURP 200V 1A DO214AC

Vishay General Semiconductor - Diodes Division

2,599 -
UH1DHE3_A/I

数据表

- DO-214AC, SMA Tape & Reel (TR) Active Standard 200 V 1.05 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 200 V 17pF @ 4V, 1MHz 1A Automotive AEC-Q101 Surface Mount DO-214AC (SMA) -55°C ~ 150°C
MPG06JHE3_A/73

MPG06JHE3_A/73

DIODE GEN PURP 600V 1A MPG06

Vishay General Semiconductor - Diodes Division

8,283 -
MPG06JHE3_A/73

数据表

- MPG06, Axial Tape & Box (TB) Active Standard 600 V 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) 600 ns 5 µA @ 600 V 10pF @ 4V, 1MHz 1A Automotive AEC-Q101 Through Hole MPG06 -55°C ~ 150°C
MPG06MHE3_A/73

MPG06MHE3_A/73

DIODE GEN PURP 1KV 1A MPG06

Vishay General Semiconductor - Diodes Division

7,617 -
MPG06MHE3_A/73

数据表

- MPG06, Axial Tape & Box (TB) Active Standard 1000 V 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) 600 ns 5 µA @ 1000 V 10pF @ 4V, 1MHz 1A Automotive AEC-Q101 Through Hole MPG06 -55°C ~ 150°C
RMPG06GHE3_A/73

RMPG06GHE3_A/73

DIODE GEN PURP 400V 1A MPG06

Vishay General Semiconductor - Diodes Division

3,237 -
RMPG06GHE3_A/73

数据表

Superectifier® MPG06, Axial Tape & Box (TB) Active Standard 400 V 1.3 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 5 µA @ 400 V 6.6pF @ 4V, 1MHz 1A Automotive AEC-Q101 Through Hole MPG06 -55°C ~ 150°C
VS-20ETF02SPBF

VS-20ETF02SPBF

DIODE GEN PURP 200V 20A TO263AB

Vishay General Semiconductor - Diodes Division

7,333 -
VS-20ETF02SPBF

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Discontinued at Digi-Key Standard 200 V 1.67 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 160 ns 100 µA @ 650 V - 20A - - Surface Mount TO-263AB (D2PAK) -40°C ~ 150°C
VS-20ETF12SPBF

VS-20ETF12SPBF

DIODE GEN PURP 1.2KV 20A TO263AB

Vishay General Semiconductor - Diodes Division

8,956 -
VS-20ETF12SPBF

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Discontinued at Digi-Key Standard 1200 V 1.31 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 400 ns 100 µA @ 1200 V - 20A - - Surface Mount TO-263AB (D2PAK) -40°C ~ 150°C
VS-MBRB1045PBF

VS-MBRB1045PBF

DIODE SCHOTTKY 45V 10A TO263AB

Vishay General Semiconductor - Diodes Division

4,781 -
VS-MBRB1045PBF

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Discontinued at Digi-Key Schottky 45 V 840 mV @ 20 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 45 V 600pF @ 5V, 1MHz 10A - - Surface Mount TO-263AB (D2PAK) -65°C ~ 150°C
VS-20ETF10STRRPBF

VS-20ETF10STRRPBF

DIODE GEN PURP 1KV 20A TO263AB

Vishay General Semiconductor - Diodes Division

3,038 -
VS-20ETF10STRRPBF

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Discontinued at Digi-Key Standard 1000 V 1.31 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 400 ns 100 µA @ 1000 V - 20A - - Surface Mount TO-263AB (D2PAK) -40°C ~ 150°C
VS-8ETU04STRLPBF

VS-8ETU04STRLPBF

DIODE GEN PURP 400V 8A TO263AB

Vishay General Semiconductor - Diodes Division

6,846 -
VS-8ETU04STRLPBF

数据表

FRED Pt® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Discontinued at Digi-Key Standard 400 V 1.3 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 60 ns 10 µA @ 400 V - 8A - - Surface Mount TO-263AB (D2PAK) -65°C ~ 175°C
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