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制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
SS3H10HE3_A/H

SS3H10HE3_A/H

DIODE SCHOTTKY 100V 3A DO214AB

Vishay General Semiconductor - Diodes Division

6,196 -
SS3H10HE3_A/H

数据表

- DO-214AB, SMC Tape & Reel (TR) Obsolete Schottky 100 V 650 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) - 20 µA @ 100 V - 3A Automotive AEC-Q101 Surface Mount DO-214AB (SMC) -65°C ~ 175°C
PMEG4030ETP-QX

PMEG4030ETP-QX

DIODE SCHOTTKY 40V 3A SOD128

Nexperia USA Inc.

3,992 -
PMEG4030ETP-QX

数据表

- SOD-128 Tape & Reel (TR) Active Schottky 40 V 490 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) - 200 µA @ 40 V 350pF @ 1V, 1MHz 3A Automotive AEC-Q101 Surface Mount SOD-128/CFP5 175°C
UH1DHE3_A/H

UH1DHE3_A/H

DIODE GEN PURP 200V 1A DO214AC

Vishay General Semiconductor - Diodes Division

6,237 -
UH1DHE3_A/H

数据表

- DO-214AC, SMA Tape & Reel (TR) Active Standard 200 V 1.05 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 200 V 17pF @ 4V, 1MHz 1A Automotive AEC-Q101 Surface Mount DO-214AC (SMA) -55°C ~ 175°C
MA2C85600E

MA2C85600E

DIODE GEN PURP 35V 100MA DO34-A1

Panasonic Electronic Components

4,324 -
MA2C85600E

数据表

- DO-204AG, DO-34, Axial Tape & Box (TB) Obsolete Standard 35 V 1 V @ 100 mA Small Signal =< 200mA (Io), Any Speed - 100 nA @ 33 V 2pF @ 15V, 1MHz 100mA - - Through Hole DO34-A1 -25°C ~ 85°C
RS5DC-HF

RS5DC-HF

DIODE GEN PURP 200V 5A DO214AB

Comchip Technology

7,646 -
RS5DC-HF

数据表

- DO-214AB, SMC Tape & Reel (TR) Active Standard 200 V 1.3 V @ 5 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 5 µA @ 200 V 50pF @ 4V, 1MHz 5A - - Surface Mount DO-214AB (SMC) -55°C ~ 150°C
RS5GC-HF

RS5GC-HF

DIODE GEN PURP 400V 5A DO214AB

Comchip Technology

7,256 -
RS5GC-HF

数据表

- DO-214AB, SMC Tape & Reel (TR) Active Standard 400 V 1.3 V @ 5 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 5 µA @ 400 V 50pF @ 4V, 1MHz 5A - - Surface Mount DO-214AB (SMC) -55°C ~ 150°C
SCS208AGC17

SCS208AGC17

DIODE SIL CARB 650V 8A TO220ACFP

Rohm Semiconductor

901 -
SCS208AGC17

数据表

- TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 1.55 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 160 µA @ 600 V 291pF @ 1V, 1MHz 8A - - Through Hole TO-220ACFP 175°C
VS-20ETF12SLHM3

VS-20ETF12SLHM3

DIODE GEN PURP 1.2KV 20A TO263AB

Vishay General Semiconductor - Diodes Division

3,426 -
VS-20ETF12SLHM3

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 1200 V 1.31 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 400 ns 100 µA @ 1200 V - 20A Automotive AEC-Q101 Surface Mount TO-263AB (D2PAK) -40°C ~ 150°C
APT30D40BG

APT30D40BG

DIODE GP 400V 30A TO247

Microchip Technology

345 -
APT30D40BG

数据表

- TO-247-2 Tube Active Standard 400 V 1.5 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 32 ns 250 µA @ 400 V - 30A - - Through Hole TO-247 [B] -55°C ~ 175°C
STTH3006W

STTH3006W

DIODE GEN PURP 600V 30A DO247

STMicroelectronics

1,882 -
STTH3006W

数据表

- DO-247-2 (Straight Leads) Tube Active Standard 600 V 1.85 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 70 ns 25 µA @ 600 V - 30A - - Through Hole DO-247 175°C (Max)
STPS20M100ST

STPS20M100ST

DIODE SCHOTTKY 100V 20A TO220

STMicroelectronics

679 -
STPS20M100ST

数据表

- TO-220-3 Tube Active Schottky 100 V 850 mV @ 20 A Fast Recovery =< 500ns, > 200mA (Io) - 40 µA @ 100 V - 20A - - Through Hole TO-220 150°C (Max)
UPS840/TR13

UPS840/TR13

DIODE SCHOTTKY 40V 8A POWERMITE3

Microchip Technology

1,835 -
UPS840/TR13

数据表

- Powermite®3 Tape & Reel (TR) Active Schottky 40 V 450 mV @ 8 A Fast Recovery =< 500ns, > 200mA (Io) - 5 mA @ 40 V - 8A - - Surface Mount Powermite 3 -55°C ~ 125°C
S4D04120A

S4D04120A

DIODE SIL CARB 1.2KV 4A TO220AC

SMC Diode Solutions

547 -
S4D04120A

数据表

- TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 1.8 V @ 4 A No Recovery Time > 500mA (Io) 0 ns 20 µA @ 1200 V 302pF @ 0V, 1MHz 4A - - Through Hole TO-220AC (TO-220-2) -55°C ~ 175°C
FFSD0665B-F085

FFSD0665B-F085

DIODE SIL CARB 650V 9.1A DPAK

onsemi

1,948 -
FFSD0665B-F085

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 1.7 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 650 V 259pF @ 1V, 100kHz 9.1A - - Surface Mount TO-252 (DPAK) -55°C ~ 175°C
VS-8EWS08STRL-M3

VS-8EWS08STRL-M3

DIODE GEN PURP 800V 8A D-PAK

Vishay General Semiconductor - Diodes Division

5,527 -
VS-8EWS08STRL-M3

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active Standard 800 V 1.1 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) - 50 µA @ 800 V - 8A - - Surface Mount TO-252AA (DPAK) -55°C ~ 150°C
UCQ30A03-TE24L2

UCQ30A03-TE24L2

DIODE SCHOTTKY 30V 30A TO263LP

KYOCERA AVX

10,325 -
UCQ30A03-TE24L2

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Schottky 30 V 500 mV @ 15 A Fast Recovery =< 500ns, > 200mA (Io) - 1.5 mA @ 30 V - 30A - - Surface Mount TO-263LP -40°C ~ 150°C
VS-E5PW3006LHN3

VS-E5PW3006LHN3

DIODE GEN PURP 600V 30A TO247AD

Vishay General Semiconductor - Diodes Division

1,850 -
VS-E5PW3006LHN3

数据表

FRED Pt® Gen 5 TO-247-2 Tube Active Standard 600 V 2.5 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 39 ns 20 µA @ 600 V - 30A Automotive AEC-Q101 Through Hole TO-247AD -55°C ~ 175°C
VS-E4PH6006L-N3

VS-E4PH6006L-N3

DIODE GP 600V 60A TO247AC

Vishay General Semiconductor - Diodes Division

395 -
VS-E4PH6006L-N3

数据表

FRED Pt® TO-247-2 Tube Active Standard 600 V 2 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 68 ns 50 µA @ 600 V - 60A - - Through Hole TO-247AC Modified -55°C ~ 175°C
IDK02G120C5XTMA1

IDK02G120C5XTMA1

DIODE SIC 1.2KV 11.8A TO263-1

Infineon Technologies

688 -
IDK02G120C5XTMA1

数据表

CoolSiC™+ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 1200 V 1.65 V @ 2 A No Recovery Time > 500mA (Io) - 18 µA @ 1200 V 182pF @ 1V, 1MHz 11.8A - - Surface Mount PG-TO263-2-1 -55°C ~ 175°C
VS-8EWS08STR-M3

VS-8EWS08STR-M3

DIODE GEN PURP 800V 8A D-PAK

Vishay General Semiconductor - Diodes Division

1,532 -
VS-8EWS08STR-M3

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active Standard 800 V 1.1 V @ 8 A Standard Recovery >500ns, > 200mA (Io) - 50 µA @ 800 V - 8A - - Surface Mount TO-252AA (DPAK) -55°C ~ 150°C
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