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单个二极管

制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
SBR6045

SBR6045

DIODE SCHOTTKY 60A 45V DO5

Microchip Technology

4,375 -
SBR6045

数据表

- DO-203AB, DO-5, Stud Bulk Active Schottky 45 V 600 mV @ 60 A Fast Recovery =< 500ns, > 200mA (Io) - 2 mA @ 45 V - 60A - - Chassis, Stud Mount - -
SBR6035R

SBR6035R

DIODE SCHOTTKY 35V 60A DO5

Microchip Technology

3,798 -
SBR6035R

数据表

- DO-203AB, DO-5, Stud Bulk Active Schottky, Reverse Polarity 35 V 600 mV @ 60 A Fast Recovery =< 500ns, > 200mA (Io) - - - 60A - - Stud Mount DO-5 (DO-203AB) -65°C ~ 150°C
SBR6040

SBR6040

DIODE SCHOTTKY 40V 60A DO5

Microchip Technology

3,863 -
SBR6040

数据表

- DO-203AB, DO-5, Stud Bulk Active Schottky 40 V 600 mV @ 60 A Fast Recovery =< 500ns, > 200mA (Io) - 2 mA @ 45 V - 60A - - Stud Mount DO-5 (DO-203AB) -55°C ~ 150°C
SBR6045E3

SBR6045E3

DIODE SCHOTTKY 45V 60A DO203AB

Microchip Technology

5,925 -
SBR6045E3

数据表

- DO-203AB, DO-5, Stud Bulk Discontinued at Digi-Key Schottky 45 V 600 mV @ 60 A Fast Recovery =< 500ns, > 200mA (Io) - 2 mA @ 45 V - 60A - - Chassis, Stud Mount DO-203AB -65°C ~ 150°C
JANS1N5802URS

JANS1N5802URS

DIODE GEN PURP 50V 2A A AXIAL

Microchip Technology

7,809 -
JANS1N5802URS

数据表

- A, Axial Bulk Active Standard 50 V 975 mV @ 2.5 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns - 25pF @ 10V, 1MHz 2A Military MIL-PRF-19500/477 Through Hole A, Axial -65°C ~ 175°C
JANS1N5804URS

JANS1N5804URS

DIODE GEN PURP 100V 2A A AXIAL

Microchip Technology

8,138 -
JANS1N5804URS

数据表

- A, Axial Bulk Active Standard 100 V 975 mV @ 2.5 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns - 25pF @ 10V, 1MHz 2A Military MIL-PRF-19500/477 Through Hole A, Axial -65°C ~ 175°C
JANS1N5806URS

JANS1N5806URS

DIODE GEN PURP 150V 2A A AXIAL

Microchip Technology

7,265 -
JANS1N5806URS

数据表

- A, Axial Bulk Active Standard 150 V 975 mV @ 2.5 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns - 25pF @ 10V, 1MHz 2A Military MIL-PRF-19500/477 Through Hole A, Axial -65°C ~ 175°C
JANS1N5806URS/TR

JANS1N5806URS/TR

DIODE GP 160V 1A A SQ-MELF

Microchip Technology

9,912 -
JANS1N5806URS/TR

数据表

- SQ-MELF, A Tape & Reel (TR) Active Standard 160 V 875 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 150 V 25pF @ 10V, 1MHz 1A Military MIL-PRF-19500/477 Surface Mount A, SQ-MELF -65°C ~ 175°C
JANS1N5802URS/TR

JANS1N5802URS/TR

DIODE GP 60V 1A A SQ-MELF

Microchip Technology

9,765 -
JANS1N5802URS/TR

数据表

- SQ-MELF, A Tape & Reel (TR) Active Standard 60 V 875 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 50 V 25pF @ 10V, 1MHz 1A Military MIL-PRF-19500/477 Surface Mount A, SQ-MELF -65°C ~ 175°C
JANS1N5804URS/TR

JANS1N5804URS/TR

UFR,FRR

Microchip Technology

9,090 -
JANS1N5804URS/TR

数据表

- SQ-MELF, A Tape & Reel (TR) Active Standard 100 V 875 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 100 V 25pF @ 10V, 1MHz 1A Military MIL-PRF-19500/477 Surface Mount D-5A -65°C ~ 175°C
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