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制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
JANTXV1N1186

JANTXV1N1186

DIODE GEN PURP 200V 35A DO5

Microchip Technology

2,708 -
JANTXV1N1186

数据表

- DO-203AB, DO-5, Stud Bulk Active Standard 200 V 1.4 V @ 110 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 200 V - 35A Military MIL-PRF-19500/297 Chassis, Stud Mount DO-5 -65°C ~ 175°C
JANS1N5551US

JANS1N5551US

DIODE GEN PURP 400V 3A B SQ-MELF

Microchip Technology

6,074 -
JANS1N5551US

数据表

- SQ-MELF, B Bulk Active Standard 400 V 1.2 V @ 9 A Standard Recovery >500ns, > 200mA (Io) 2 µs - - 3A Military MIL-PRF-19500/420 Surface Mount B, SQ-MELF -65°C ~ 175°C
JANS1N5551US/TR

JANS1N5551US/TR

DIODE GEN PURP 400V 3A B SQ-MELF

Microchip Technology

6,345 -
JANS1N5551US/TR

数据表

- SQ-MELF, B Tape & Reel (TR) Active Standard 400 V 1.2 V @ 9 A Standard Recovery >500ns, > 200mA (Io) 2 µs - - 3A Military MIL-PRF-19500/420 Surface Mount B, SQ-MELF -65°C ~ 175°C
JANS1N5554US/TR

JANS1N5554US/TR

DIODE GEN PURP 3A B SQ-MELF

Microchip Technology

8,330 -
JANS1N5554US/TR

数据表

- SQ-MELF, B Tape & Reel (TR) Active Standard - 1.3 V @ 9 A Standard Recovery >500ns, > 200mA (Io) 2 µs 1 µA @ 150 V - 3A Military MIL-PRF-19500/420 Surface Mount B, SQ-MELF -65°C ~ 175°C
JANS1N3595A-1

JANS1N3595A-1

DIODE GEN PURP 125V 150MA DO35

Microchip Technology

7,630 -
JANS1N3595A-1

数据表

- DO-204AH, DO-35, Axial Bulk Active Standard 125 V 1 V @ 200 mA Small Signal =< 200mA (Io), Any Speed 3 µs 2 nA @ 125 V - 150mA Military MIL-S-19500-241 Through Hole DO-204AH (DO-35) -65°C ~ 175°C
JANS1N5554US

JANS1N5554US

DIODE GEN PURP 3A B SQ-MELF

Microchip Technology

6,913 -
JANS1N5554US

数据表

- SQ-MELF, B Bulk Active Standard - 1.3 V @ 9 A Standard Recovery >500ns, > 200mA (Io) 2 µs 1 µA @ 150 V - 3A Military MIL-PRF-19500/420 Surface Mount B, SQ-MELF -65°C ~ 175°C
60HFU-500

60HFU-500

DIODE GEN PURP 500V DO203AB

Microchip Technology

4,689 -
60HFU-500

数据表

- DO-203AB, DO-5, Stud Bulk Active Standard 500 V - Standard Recovery >500ns, > 200mA (Io) - - - - - - Stud Mount DO-203AB (DO-5) -65°C ~ 175°C
60HFU-400

60HFU-400

DIODE GEN PURP 400V DO203AB

Microchip Technology

8,188 -
60HFU-400

数据表

- DO-203AB, DO-5, Stud Bulk Active Standard 400 V - Standard Recovery >500ns, > 200mA (Io) - - - - - - Stud Mount DO-203AB (DO-5) -65°C ~ 175°C
60HFU-100

60HFU-100

DIODE GEN PURP 100V DO203AB

Microchip Technology

8,875 -
60HFU-100

数据表

- DO-203AB, DO-5, Stud Bulk Active Standard 100 V - Standard Recovery >500ns, > 200mA (Io) - - - - - - Stud Mount DO-203AB (DO-5) -65°C ~ 175°C
60HFU-200

60HFU-200

DIODE GEN PURP 200V DO203AB

Microchip Technology

9,811 -
60HFU-200

数据表

- DO-203AB, DO-5, Stud Bulk Active Standard 200 V - Standard Recovery >500ns, > 200mA (Io) - - - - - - Stud Mount DO-203AB (DO-5) -65°C ~ 175°C
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