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单个二极管

制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
UES2601

UES2601

DIODE GEN PURP 50V 30A TO204AD

Microchip Technology

7,996 -
UES2601

数据表

- TO-204AA, TO-3 Bulk Active Standard 50 V 930 mV @ 15 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 20 µA @ 50 V - 30A - - Through Hole TO-204AA (TO-3) -55°C ~ 175°C
UES2604

UES2604

DIODE GEN PURP 200V 30A TO204AD

Microchip Technology

6,238 -
UES2604

数据表

- TO-204AA, TO-3 Bulk Active Standard 200 V 1.25 V @ 15 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 50 µA @ 200 V - 30A - - Through Hole TO-204AA (TO-3) -55°C ~ 150°C
UES2603

UES2603

DIODE GEN PURP 150V 30A TO204AD

Microchip Technology

5,294 -
UES2603

数据表

- TO-204AA, TO-3 Bulk Active Standard 150 V 930 mV @ 15 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 20 µA @ 150 V - 30A - - Through Hole TO-204AA (TO-3) -55°C ~ 175°C
1N5811U4

1N5811U4

DIODE GEN PURP 150V 6A U4

Microchip Technology

2,453 -
1N5811U4

数据表

- 3-SMD, No Lead Bulk Active Standard 150 V 925 mV @ 6 A Standard Recovery >500ns, > 200mA (Io) 525 µs 5 µA @ 150 V - 6A - - Surface Mount U4 -65°C ~ 175°C
JANS1N6639

JANS1N6639

DIODE GEN PURP 75V 300MA DO35

Microchip Technology

7,666 -
JANS1N6639

数据表

- DO-204AH, DO-35, Axial Bulk Active Standard 75 V 1.2 V @ 500 mA Fast Recovery =< 500ns, > 200mA (Io) 4 ns 100 nA @ 75 V - 300mA Military MIL-PRF-19500/609 Through Hole DO-204AH (DO-35) -65°C ~ 175°C
JANS1N6641

JANS1N6641

DIODE GEN PURP 100V 300MA DO35

Microchip Technology

4,971 -
JANS1N6641

数据表

- DO-204AH, DO-35, Axial Bulk Active Standard 100 V 1.1 V @ 200 mA Fast Recovery =< 500ns, > 200mA (Io) 5 ns 100 nA @ 50 V - 300mA Military MIL-PRF-19500/609 Through Hole DO-204AH (DO-35) -65°C ~ 175°C
JANS1N6640/TR

JANS1N6640/TR

DIODE GEN PURP 50V 300MA

Microchip Technology

7,857 -
JANS1N6640/TR

数据表

- DO-204AH, DO-35, Axial Tape & Reel (TR) Active Standard 50 V 1 V @ 200 mA Fast Recovery =< 500ns, > 200mA (Io) 4 ns 100 nA @ 50 V - 300mA Military MIL-PRF-19500/609 Through Hole DO-204AH (DO-35) -65°C ~ 175°C
JANS1N6638/TR

JANS1N6638/TR

DIODE GP REV 150V 300MA DO35

Microchip Technology

6,374 -
JANS1N6638/TR

数据表

- DO-204AH, DO-35, Axial Tape & Reel (TR) Active Standard, Reverse Polarity 150 V 1.1 V @ 200 mA Fast Recovery =< 500ns, > 200mA (Io) 4.5 ns 500 nA @ 125 V 2pF @ 0V, 1MHz 300mA Military MIL-PRF-19500/578 Through Hole DO-204AH (DO-35) -65°C ~ 200°C
JANTXV1N1202AR

JANTXV1N1202AR

DIODE GP REV 200V 12A DO203AA

Microchip Technology

6,298 -
JANTXV1N1202AR

数据表

- DO-203AA, DO-4, Stud Bulk Active Standard, Reverse Polarity 200 V 1.35 V @ 38 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 200 V - 12A Military MIL-PRF-19500/260 Chassis, Stud Mount DO-203AA (DO-4) -65°C ~ 150°C
UES1306HR2

UES1306HR2

RECTIFIER

Microchip Technology

9,681 -
UES1306HR2

数据表

* - Bulk Active - - - - - - - - - - - - -
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