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| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)（最大值） | 电压 - 正向 (Vf)（最大值）@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流（Io） | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
JANS1N5417US/TRDIODE GEN PURP 200V 3A B SQ-MELF Microchip Technology |
4,776 | - |
|
数据表 |
- | SQ-MELF, B | Tape & Reel (TR) | Active | Standard | 200 V | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 1 µA @ 150 V | - | 3A | Military | MIL-PRF-19500/411 | Surface Mount | B, SQ-MELF | -65°C ~ 175°C |
|
|
JANS1N5415US/TRDIODE GEN PURP 50V 3A B SQ-MELF Microchip Technology |
6,242 | - |
|
数据表 |
- | SQ-MELF, B | Tape & Reel (TR) | Active | Standard | 50 V | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | - | - | 3A | Military | MIL-PRF-19500/411 | Surface Mount | B, SQ-MELF | -65°C ~ 175°C |
|
UES806DIODE GEN PURP 400V 50A DO5 Microchip Technology |
6,885 | - |
|
数据表 |
- | DO-203AB, DO-5, Stud | Bulk | Active | Standard | 400 V | 1.25 V @ 50 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 70 µA @ 400 V | - | 50A | - | - | Stud Mount | DO-5 (DO-203AB) | -55°C ~ 150°C |
|
|
JANTX1N3768RDIODE GEN PURP REV 1KV 35A DO5 Microchip Technology |
5,698 | - |
|
数据表 |
- | DO-203AB, DO-5, Stud | Bulk | Active | Standard, Reverse Polarity | 1000 V | 2.3 V @ 500 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 1000 V | - | 35A | Military | MIL-PRF-19500/297 | Chassis, Stud Mount | DO-5 | -65°C ~ 175°C |
|
|
JANTX1N3766DIODE GEN PURP 800V 35A DO5 Microchip Technology |
5,834 | - |
|
数据表 |
- | DO-203AB, DO-5, Stud | Bulk | Discontinued at Digi-Key | Standard | 800 V | 2.3 V @ 500 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 800 V | - | 35A | Military | MIL-PRF-19500/297 | Chassis, Stud Mount | DO-5 | -65°C ~ 175°C |
|
|
JANS1N5416USDIODE GEN PURP 100V 3A B SQ-MELF Microchip Technology |
2,183 | - |
|
数据表 |
- | SQ-MELF, B | Bulk | Active | Standard | 100 V | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | - | - | 3A | Military | MIL-PRF-19500/411 | Surface Mount | B, SQ-MELF | -65°C ~ 175°C |
|
|
JANS1N5417USDIODE GEN PURP 200V 3A B SQ-MELF Microchip Technology |
4,789 | - |
|
数据表 |
- | SQ-MELF, B | Bulk | Active | Standard | 200 V | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 1 µA @ 150 V | - | 3A | Military | MIL-PRF-19500/411 | Surface Mount | B, SQ-MELF | -65°C ~ 175°C |
|
|
JANTXV1N3766DIODE GEN PURP 800V 35A DO5 Microchip Technology |
5,281 | - |
|
数据表 |
- | DO-203AB, DO-5, Stud | Bulk | Active | Standard | 800 V | 1.4 V @ 110 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 800 V | - | 35A | Military | MIL-PRF-19500/297 | Chassis, Stud Mount | DO-5 | -65°C ~ 175°C |
|
|
JANTXV1N3768DIODE GEN PURP 1KV 35A DO5 Microchip Technology |
8,385 | - |
|
数据表 |
- | DO-203AB, DO-5, Stud | Bulk | Active | Standard | 1000 V | 1.4 V @ 110 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 1000 V | - | 35A | Military | MIL-PRF-19500/297 | Chassis, Stud Mount | DO-5 | -65°C ~ 175°C |
|
UES2602DIODE GEN PURP 100V 30A TO204AA Microchip Technology |
5,247 | - |
|
数据表 |
- | TO-204AA, TO-3 | Bulk | Discontinued at Digi-Key | Standard | 100 V | 930 mV @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 20 µA @ 100 V | - | 30A | - | - | Through Hole | TO-204AA (TO-3) | -55°C ~ 175°C |
