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单个二极管

制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
JANTX1N1615

JANTX1N1615

DIODE GEN PURP 400V 15A DO203AA

Microchip Technology

4,241 -
JANTX1N1615

数据表

- DO-203AA, DO-4, Stud Bulk Active Standard 400 V 1.5 V @ 15 A Standard Recovery >500ns, > 200mA (Io) - 50 µA @ 400 V - 15A Military MIL-PRF-19500/162 Chassis, Stud Mount DO-203AA (DO-4) -65°C ~ 175°C
JANTX1N1615R

JANTX1N1615R

DIODE GP REV 400V 15A DO203AA

Microchip Technology

8,200 -
JANTX1N1615R

数据表

- DO-203AA, DO-4, Stud Bulk Active Standard, Reverse Polarity 400 V 1.5 V @ 15 A Standard Recovery >500ns, > 200mA (Io) - 50 µA @ 400 V - 15A Military MIL-PRF-19500/162 Chassis, Stud Mount DO-203AA (DO-4) -65°C ~ 175°C
JANTX1N1616R

JANTX1N1616R

DIODE GP REV 600V 15A DO203AA

Microchip Technology

2,279 -
JANTX1N1616R

数据表

- DO-203AA, DO-4, Stud Bulk Active Standard, Reverse Polarity 600 V 1.5 V @ 15 A Standard Recovery >500ns, > 200mA (Io) - 50 µA @ 600 V - 15A Military MIL-PRF-19500/162 Chassis, Stud Mount DO-203AA (DO-4) -65°C ~ 175°C
1N5820/TR

1N5820/TR

DIODE SCHOTTKY 20V 3A B AXIAL

Microchip Technology

3,133 -
1N5820/TR

数据表

- B, Axial Tape & Reel (TR) Active Schottky, Reverse Polarity 20 V 500 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 20 V - 3A - - Through Hole B, Axial -65°C ~ 125°C
JANTXV1N5712UR-1/TR

JANTXV1N5712UR-1/TR

DIODE SCHOTTKY 16V 75MA DO213AA

Microchip Technology

3,283 -
JANTXV1N5712UR-1/TR

数据表

- DO-213AA Tape & Reel (TR) Active Schottky 16 V 1 V @ 35 mA Small Signal =< 200mA (Io), Any Speed - 150 nA @ 16 V 2pF @ 0V, 1MHz 75mA Military MIL-PRF-19500/444 Surface Mount DO-213AA -65°C ~ 150°C
JANS1N5415

JANS1N5415

DIODE GEN PURP 50V 3A B AXIAL

Microchip Technology

5,019 -
JANS1N5415

数据表

- B, Axial Bulk Active Standard 50 V 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 1 µA @ 150 V - 3A Military MIL-PRF-19500/411 Through Hole B, Axial -65°C ~ 175°C
JANS1N5416

JANS1N5416

DIODE GEN PURP 100V 3A B AXIAL

Microchip Technology

5,247 -
JANS1N5416

数据表

- B, Axial Bulk Active Standard 100 V 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns - - 3A Military MIL-PRF-19500/411 Through Hole B, Axial -65°C ~ 175°C
JANS1N5417

JANS1N5417

DIODE GEN PURP 200V 3A B AXIAL

Microchip Technology

9,176 -
JANS1N5417

数据表

- B, Axial Bulk Active Standard 200 V 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns - - 3A Military MIL-PRF-19500/411 Through Hole B, Axial -65°C ~ 175°C
JANS1N5419

JANS1N5419

DIODE GEN PURP 500V 3A B AXIAL

Microchip Technology

4,141 -
JANS1N5419

数据表

- B, Axial Bulk Active Standard 500 V 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 250 ns - - 3A Military MIL-PRF-19500/411 Through Hole B, Axial -65°C ~ 175°C
JANS1N5420/TR

JANS1N5420/TR

DIODE GEN PURP 600V 3A B AXIAL

Microchip Technology

7,178 -
JANS1N5420/TR

数据表

- B, Axial Tape & Reel (TR) Active Standard 600 V 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 400 ns - - 3A Military MIL-PRF-19500/411 Through Hole B, Axial -65°C ~ 175°C
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