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单个二极管

制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
R4220

R4220

DIODE GEN PURP 200V 125A DO205AA

Microchip Technology

7,610 -
R4220

数据表

- DO-205AA, DO-8, Stud Tray Active Standard, Reverse Polarity 200 V 1.2 V @ 200 A Standard Recovery >500ns, > 200mA (Io) - 50 µA @ 200 V - 125A - - Chassis, Stud Mount DO-205AA (DO-8) -65°C ~ 200°C
R43120

R43120

DIODE GP 1.2KV 150A DO205AA

Microchip Technology

4,473 -
R43120

数据表

- DO-205AA, DO-8, Stud Tray Active Standard, Reverse Polarity 1200 V 1.1 V @ 200 A Standard Recovery >500ns, > 200mA (Io) - 50 µA @ 1200 V - 150A - - Chassis, Stud Mount DO-205AA (DO-8) -65°C ~ 200°C
R43120TS

R43120TS

DIODE GP 1.2KV 150A DO205AA

Microchip Technology

5,538 -
R43120TS

数据表

- DO-205AA, DO-8, Stud Tray Active Standard, Reverse Polarity 1200 V 1.1 V @ 200 A Standard Recovery >500ns, > 200mA (Io) - 50 µA @ 1200 V - 150A - - Chassis, Stud Mount DO-205AA (DO-8) -65°C ~ 200°C
UES1105HR2/TR

UES1105HR2/TR

DIODE GEN PURP 300V 2A A AXIAL

Microchip Technology

4,269 -
UES1105HR2/TR

数据表

- A, Axial Tape & Reel (TR) Active Standard 300 V 1.25 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns - - 2A - - Through Hole A, Axial -
1N5820

1N5820

DIODE SCHOTTKY 20V 3A B AXIAL

Microchip Technology

2,731 -
1N5820

数据表

- B, Axial Bulk Active Schottky 20 V 500 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 20 V - 3A - - Through Hole B, Axial -65°C ~ 125°C
JANS1N5615US/TR

JANS1N5615US/TR

DIODE GEN PURP 200V 1A A SQ-MELF

Microchip Technology

6,319 -
JANS1N5615US/TR

数据表

- SQ-MELF, A Tape & Reel (TR) Active Standard 200 V 1.6 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns - - 1A Military MIL-PRF-19500/429 Surface Mount A, SQ-MELF -65°C ~ 175°C
UES1106HR2/TR

UES1106HR2/TR

DIODE GEN PURP 400V 2A A AXIAL

Microchip Technology

5,650 -
UES1106HR2/TR

数据表

- A, Axial Tape & Reel (TR) Active Standard 400 V 1.25 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns - - 2A - - Through Hole A, Axial -
1N6081US/TR

1N6081US/TR

DIODE GP 150V 2A G SQ-MELF

Microchip Technology

8,685 -
1N6081US/TR

数据表

- SQ-MELF, A Tape & Reel (TR) Active Standard 150 V 1.5 V @ 37.7 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 10 µA @ 150 V - 2A - - Surface Mount G, SQ-MELF -65°C ~ 155°C
JANS1N5420

JANS1N5420

DIODE GEN PURP 600V 3A B AXIAL

Microchip Technology

8,478 -
JANS1N5420

数据表

- B, Axial Bulk Active Standard 600 V 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 400 ns - - 3A Military MIL-PRF-19500/411 Through Hole B, Axial -65°C ~ 175°C
JANTX1N1614R

JANTX1N1614R

DIODE GP REV 200V 15A DO203AA

Microchip Technology

6,335 -
JANTX1N1614R

数据表

- DO-203AA, DO-4, Stud Bulk Active Standard, Reverse Polarity 200 V 1.5 V @ 15 A Standard Recovery >500ns, > 200mA (Io) - 50 µA @ 200 V - 15A Military MIL-PRF-19500/162 Chassis, Stud Mount DO-203AA (DO-4) -65°C ~ 175°C
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