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单个二极管
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)（最大值） | 电压 - 正向 (Vf)（最大值）@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流（Io） | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
JANS1N6640US/TRDIODE GEN PURP 50V 300MA D-5D Microchip Technology |
3,908 | - |
|
数据表 |
- | SQ-MELF, D | Tape & Reel (TR) | Active | Standard | 50 V | 1 V @ 200 mA | Fast Recovery =< 500ns, > 200mA (Io) | 4 ns | 100 nA @ 50 V | - | 300mA | Military | MIL-PRF-19500/609 | Surface Mount | D-5D | -65°C ~ 175°C |
|
|
JANTX1N6080/TRDIODE GP REV 100V 2A G AXIAL Microchip Technology |
2,231 | - |
|
数据表 |
- | G, Axial | Tape & Reel (TR) | Active | Standard, Reverse Polarity | 100 V | 1.5 V @ 37.7 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 10 µA @ 100 V | - | 2A | Military | MIL-PRF-19500/503 | Through Hole | G, Axial | -65°C ~ 155°C |
|
|
JANTXV1N6080DIODE GEN PURP 100V 2A G AXIAL Microchip Technology |
5,983 | - |
|
数据表 |
- | G, Axial | Bulk | Active | Standard | 100 V | 1.5 V @ 37.7 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 10 µA @ 100 V | - | 2A | Military | MIL-PRF-19500/503 | Through Hole | G, Axial | -65°C ~ 155°C |
|
|
JANTXV1N6079DIODE GEN PURP 50V 2A G AXIAL Microchip Technology |
5,224 | - |
|
数据表 |
- | G, Axial | Bulk | Active | Standard | 50 V | 1.5 V @ 37.7 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 10 µA @ 50 V | - | 2A | Military | MIL-PRF-19500/503 | Through Hole | G, Axial | -65°C ~ 155°C |
|
|
1N3663RDIODE GEN PURP REV 400V 35A DO21 Microchip Technology |
6,169 | - |
|
数据表 |
- | DO-208AA | Bulk | Active | Standard, Reverse Polarity | 400 V | 1.1 V @ 35 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 400 V | - | 35A | - | - | Press Fit | DO-21 | -65°C ~ 175°C |
|
|
1N3663DIODE GEN PURP 400V 35A DO21 Microchip Technology |
5,176 | - |
|
数据表 |
- | DO-208AA | Bulk | Active | Standard | 400 V | 1.1 V @ 35 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 400 V | - | 35A | - | - | Press Fit | DO-21 | -65°C ~ 175°C |
|
|
1N3660RDIODE GEN PURP REV 100V 35A DO21 Microchip Technology |
5,371 | - |
|
数据表 |
- | DO-208AA | Bulk | Active | Standard, Reverse Polarity | 100 V | 1.1 V @ 35 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 100 V | - | 35A | - | - | Press Fit | DO-21 | -65°C ~ 175°C |
|
|
1N3665RDIODE GEN PURP REV 600V 35A DO21 Microchip Technology |
9,327 | - |
|
数据表 |
- | DO-208AA | Bulk | Active | Standard, Reverse Polarity | 600 V | 1.1 V @ 35 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 600 V | - | 35A | - | - | Press Fit | DO-21 | -65°C ~ 175°C |
|
|
1N3665DIODE GEN PURP 600V 35A DO21 Microchip Technology |
4,523 | - |
|
数据表 |
- | DO-208AA | Bulk | Active | Standard | 600 V | 1.1 V @ 35 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 600 V | - | 35A | - | - | Press Fit | DO-21 | -65°C ~ 175°C |
|
|
1N3662RDIODE GEN PURP REV 300V 35A DO21 Microchip Technology |
8,635 | - |
|
数据表 |
- | DO-208AA | Bulk | Active | Standard, Reverse Polarity | 300 V | 1.1 V @ 35 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 300 V | - | 35A | - | - | Press Fit | DO-21 | -65°C ~ 175°C |
