| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)(最大值) | 电压 - 正向 (Vf)(最大值)@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流(Io) | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1N3659DIODE GEN PURP 50V 35A DO21 Microchip Technology |
3,607 | - |
|
数据表 |
- | DO-208AA | Bulk | Active | Standard | 50 V | 1.1 V @ 35 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 50 V | - | 35A | - | - | Press Fit | DO-21 | -65°C ~ 175°C |
|
1N3664RDIODE GEN PURP REV 500V 35A DO21 Microchip Technology |
6,131 | - |
|
数据表 |
- | DO-208AA | Bulk | Active | Standard, Reverse Polarity | 500 V | 1.1 V @ 35 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 500 V | - | 35A | - | - | Press Fit | DO-21 | -65°C ~ 175°C |
|
1N3661DIODE GEN PURP 200V 35A DO21 Microchip Technology |
9,835 | - |
|
数据表 |
- | DO-208AA | Bulk | Active | Standard | 200 V | 1.1 V @ 35 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 200 V | - | 35A | - | - | Press Fit | DO-21 | -65°C ~ 175°C |
|
1N3662DIODE GEN PURP 300V 35A DO21 Microchip Technology |
4,780 | - |
|
数据表 |
- | DO-208AA | Bulk | Active | Standard | 300 V | 1.1 V @ 35 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 300 V | - | 35A | - | - | Press Fit | DO-21 | -65°C ~ 175°C |
|
1N3661RDIODE GEN PURP REV 200V 35A DO21 Microchip Technology |
8,396 | - |
|
数据表 |
- | DO-208AA | Bulk | Active | Standard, Reverse Polarity | 200 V | 1.1 V @ 35 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 200 V | - | 35A | - | - | Press Fit | DO-21 | -65°C ~ 175°C |
|
1N3659RDIODE GEN PURP REV 50V 35A DO21 Microchip Technology |
9,643 | - |
|
数据表 |
- | DO-208AA | Bulk | Active | Standard, Reverse Polarity | 50 V | 1.1 V @ 35 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 50 V | - | 35A | - | - | Press Fit | DO-21 | -65°C ~ 175°C |
|
1N3664DIODE GEN PURP 500V 35A DO21 Microchip Technology |
5,025 | - |
|
数据表 |
- | DO-208AA | Bulk | Active | Standard | 500 V | 1.1 V @ 35 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 500 V | - | 35A | - | - | Press Fit | DO-21 | -65°C ~ 175°C |
|
1N3666DIODE GEN PURP 80V 500MA AXIAL Microchip Technology |
2,199 | - |
|
数据表 |
- | Axial | Bulk | Active | Standard | 80 V | 1 V @ 200 mA | Fast Recovery =< 500ns, > 200mA (Io) | 300 ns | 25 µA @ 50 V | - | 500mA | - | - | Through Hole | Axial | -65°C ~ 85°C |
|
R3540DIODE GEN PURP REV 400V 70A DO5 Microchip Technology |
9,005 | - |
|
数据表 |
- | DO-203AB, DO-5, Stud | Bulk | Active | Standard, Reverse Polarity | 400 V | 1.25 V @ 200 A | Standard Recovery >500ns, > 200mA (Io) | - | 25 µA @ 400 V | - | 70A | - | - | Stud Mount | DO-5 (DO-203AB) | -65°C ~ 200°C |
|
R3560DIODE GEN PURP REV 600V 70A DO5 Microchip Technology |
5,266 | - |
|
数据表 |
- | DO-203AB, DO-5, Stud | Bulk | Active | Standard, Reverse Polarity | 600 V | 1.25 V @ 200 A | Standard Recovery >500ns, > 200mA (Io) | - | 25 µA @ 600 V | - | 70A | - | - | Stud Mount | DO-5 (DO-203AB) | -65°C ~ 200°C |