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单个二极管

制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
JANS1N5802US/TR

JANS1N5802US/TR

DIODE GEN PURP 50V 1A A AXIAL

Microchip Technology

7,236 -
JANS1N5802US/TR

数据表

- A, Axial Tape & Reel (TR) Active Standard 50 V 975 mV @ 2.5 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns - 25pF @ 10V, 1MHz 1A Military MIL-PRF-19500/477 Through Hole A, Axial -65°C ~ 175°C
JANS1N5804US/TR

JANS1N5804US/TR

DIODE GEN PURP 100V 1A A AXIAL

Microchip Technology

3,825 -
JANS1N5804US/TR

数据表

- A, Axial Tape & Reel (TR) Active Standard 100 V 975 mV @ 2.5 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 150 V 25pF @ 10V, 1MHz 1A Military MIL-PRF-19500/477 Through Hole A, Axial -65°C ~ 175°C
JANS1N5804US

JANS1N5804US

DIODE GEN PURP 100V 1A A AXIAL

Microchip Technology

3,420 -
JANS1N5804US

数据表

- A, Axial Bulk Active Standard 100 V 975 mV @ 2.5 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 150 V 25pF @ 10V, 1MHz 1A Military MIL-PRF-19500/477 Through Hole A, Axial -65°C ~ 175°C
JANS1N5802US

JANS1N5802US

DIODE GEN PURP 50V 1A A AXIAL

Microchip Technology

3,624 -
JANS1N5802US

数据表

- A, Axial Bulk Active Standard 50 V 975 mV @ 2.5 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns - 25pF @ 10V, 1MHz 1A Military MIL-PRF-19500/477 Through Hole A, Axial -65°C ~ 175°C
JANTXV1N6627US

JANTXV1N6627US

DIODE GEN PURP 440V 1.75A D-5B

Microchip Technology

5,861 -
JANTXV1N6627US

数据表

- SQ-MELF, E Bulk Active Standard 440 V 1.35 V @ 2 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 2 µA @ 440 V 40pF @ 10V, 1MHz 1.75A Military MIL-PRF-19500/590 Surface Mount D-5B -65°C ~ 150°C
JANTXV1N6627U

JANTXV1N6627U

DIODE GEN PURP 400V 1.75A D-5B

Microchip Technology

8,433 -
JANTXV1N6627U

数据表

- SQ-MELF, E Bulk Active Standard 400 V 1.35 V @ 2 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 2 µA @ 400 V - 1.75A Military MIL-PRF-19500/590 Surface Mount D-5B -65°C ~ 150°C
UES1301SM

UES1301SM

DIODE GEN PURP 50V 8A D-5B

Microchip Technology

6,583 -
UES1301SM

数据表

- SQ-MELF, E Bulk Active Standard 50 V 925 mV @ 6 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns - - 8A - - Surface Mount D-5B -
UES1302SM

UES1302SM

DIODE GEN PURP 100V 8A D-5B

Microchip Technology

5,617 -
UES1302SM

数据表

- SQ-MELF, E Bulk Active Standard 100 V 925 mV @ 6 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns - - 8A - - Surface Mount D-5B -
JANTXV1N6627US/TR

JANTXV1N6627US/TR

DIODE GEN PURP 440V 1.75A D-5B

Microchip Technology

4,824 -
JANTXV1N6627US/TR

数据表

- SQ-MELF, E Tape & Reel (TR) Active Standard 440 V 1.35 V @ 2 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 2 µA @ 440 V 40pF @ 10V, 1MHz 1.75A Military MIL-PRF-19500/590 Surface Mount D-5B -65°C ~ 150°C
JANTXV1N6627U/TR

JANTXV1N6627U/TR

DIODE GEN PURP 400V 1.75A D-5B

Microchip Technology

3,118 -
JANTXV1N6627U/TR

数据表

- SQ-MELF, E Tape & Reel (TR) Active Standard 400 V 1.35 V @ 2 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 2 µA @ 400 V - 1.75A Military MIL-PRF-19500/590 Surface Mount D-5B -65°C ~ 150°C
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