| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)(最大值) | 电压 - 正向 (Vf)(最大值)@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流(Io) | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
JANS1N5802US/TRDIODE GEN PURP 50V 1A A AXIAL Microchip Technology |
7,236 | - |
|
数据表 |
- | A, Axial | Tape & Reel (TR) | Active | Standard | 50 V | 975 mV @ 2.5 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | - | 25pF @ 10V, 1MHz | 1A | Military | MIL-PRF-19500/477 | Through Hole | A, Axial | -65°C ~ 175°C |
|
JANS1N5804US/TRDIODE GEN PURP 100V 1A A AXIAL Microchip Technology |
3,825 | - |
|
数据表 |
- | A, Axial | Tape & Reel (TR) | Active | Standard | 100 V | 975 mV @ 2.5 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 1 µA @ 150 V | 25pF @ 10V, 1MHz | 1A | Military | MIL-PRF-19500/477 | Through Hole | A, Axial | -65°C ~ 175°C |
|
JANS1N5804USDIODE GEN PURP 100V 1A A AXIAL Microchip Technology |
3,420 | - |
|
数据表 |
- | A, Axial | Bulk | Active | Standard | 100 V | 975 mV @ 2.5 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 1 µA @ 150 V | 25pF @ 10V, 1MHz | 1A | Military | MIL-PRF-19500/477 | Through Hole | A, Axial | -65°C ~ 175°C |
|
JANS1N5802USDIODE GEN PURP 50V 1A A AXIAL Microchip Technology |
3,624 | - |
|
数据表 |
- | A, Axial | Bulk | Active | Standard | 50 V | 975 mV @ 2.5 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | - | 25pF @ 10V, 1MHz | 1A | Military | MIL-PRF-19500/477 | Through Hole | A, Axial | -65°C ~ 175°C |
|
JANTXV1N6627USDIODE GEN PURP 440V 1.75A D-5B Microchip Technology |
5,861 | - |
|
数据表 |
- | SQ-MELF, E | Bulk | Active | Standard | 440 V | 1.35 V @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 2 µA @ 440 V | 40pF @ 10V, 1MHz | 1.75A | Military | MIL-PRF-19500/590 | Surface Mount | D-5B | -65°C ~ 150°C |
|
JANTXV1N6627UDIODE GEN PURP 400V 1.75A D-5B Microchip Technology |
8,433 | - |
|
数据表 |
- | SQ-MELF, E | Bulk | Active | Standard | 400 V | 1.35 V @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 2 µA @ 400 V | - | 1.75A | Military | MIL-PRF-19500/590 | Surface Mount | D-5B | -65°C ~ 150°C |
|
UES1301SMDIODE GEN PURP 50V 8A D-5B Microchip Technology |
6,583 | - |
|
数据表 |
- | SQ-MELF, E | Bulk | Active | Standard | 50 V | 925 mV @ 6 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | - | - | 8A | - | - | Surface Mount | D-5B | - |
|
UES1302SMDIODE GEN PURP 100V 8A D-5B Microchip Technology |
5,617 | - |
|
数据表 |
- | SQ-MELF, E | Bulk | Active | Standard | 100 V | 925 mV @ 6 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | - | - | 8A | - | - | Surface Mount | D-5B | - |
|
JANTXV1N6627US/TRDIODE GEN PURP 440V 1.75A D-5B Microchip Technology |
4,824 | - |
|
数据表 |
- | SQ-MELF, E | Tape & Reel (TR) | Active | Standard | 440 V | 1.35 V @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 2 µA @ 440 V | 40pF @ 10V, 1MHz | 1.75A | Military | MIL-PRF-19500/590 | Surface Mount | D-5B | -65°C ~ 150°C |
|
JANTXV1N6627U/TRDIODE GEN PURP 400V 1.75A D-5B Microchip Technology |
3,118 | - |
|
数据表 |
- | SQ-MELF, E | Tape & Reel (TR) | Active | Standard | 400 V | 1.35 V @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 2 µA @ 400 V | - | 1.75A | Military | MIL-PRF-19500/590 | Surface Mount | D-5B | -65°C ~ 150°C |