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单个二极管

制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
JANS1N5804

JANS1N5804

DIODE GEN PURP 100V 2A A AXIAL

Microchip Technology

6,773 -
JANS1N5804

数据表

- A, Axial Bulk Active Standard 100 V 975 mV @ 2.5 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns - - 2A Military MIL-PRF-19500/477 Through Hole A, Axial -65°C ~ 175°C
JANS1N6643US

JANS1N6643US

DIODE GP 50V 300MA B SQ-MELF

Microchip Technology

7,245 -
JANS1N6643US

数据表

- SQ-MELF, B Bulk Active Standard 50 V 1.2 V @ 100 mA Fast Recovery =< 500ns, > 200mA (Io) 6 ns - 5pF @ 0V, 1MHz 300mA Military MIL-PRF-19500/578 Surface Mount B, SQ-MELF -65°C ~ 175°C
JANS1N6643U

JANS1N6643U

DIODE GEN PURP 125V 300MA D-5B

Microchip Technology

5,904 -
JANS1N6643U

数据表

- SQ-MELF, E Bulk Active Standard 125 V 1.2 V @ 100 mA Fast Recovery =< 500ns, > 200mA (Io) 6 ns 500 nA @ 150 V 5pF @ 0V, 1MHz 300mA Military MIL-PRF-19500/578 Surface Mount D-5B -65°C ~ 175°C
JANS1N5804/TR

JANS1N5804/TR

DIODE GEN PURP 100V 2A A AXIAL

Microchip Technology

5,787 -
JANS1N5804/TR

数据表

- A, Axial Tape & Reel (TR) Active Standard 100 V 975 mV @ 2.5 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns - - 2A Military MIL-PRF-19500/477 Through Hole A, Axial -65°C ~ 175°C
JANS1N5802/TR

JANS1N5802/TR

DIODE GEN PURP 50V 2A A AXIAL

Microchip Technology

9,222 -
JANS1N5802/TR

数据表

- A, Axial Tape & Reel (TR) Active Standard 50 V 875 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns - - 2A Military MIL-PRF-19500/477 Through Hole A, Axial -65°C ~ 175°C
JANS1N5806/TR

JANS1N5806/TR

DIODE GEN PURP 150V 1A

Microchip Technology

2,751 -
JANS1N5806/TR

数据表

- A, Axial Tape & Reel (TR) Active Standard 150 V 875 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 150 V 25pF @ 10V, 1MHz 1A Military MIL-PRF-19500/477 Through Hole A, Axial -65°C ~ 175°C
1N6078US

1N6078US

DIODE GEN PURP 150V 6A D-5B

Microchip Technology

4,724 -
1N6078US

数据表

- SQ-MELF, E Bulk Active Standard 150 V 1.76 V @ 18.8 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 150 V - 6A - - Surface Mount D-5B -65°C ~ 155°C
1N6079US

1N6079US

DIODE GEN PURP 50V 2A G-MELF

Microchip Technology

3,024 -
1N6079US

数据表

- SQ-MELF, G Bulk Active Standard 50 V 1.5 V @ 37.7 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 10 µA @ 50 V - 2A - - Surface Mount G-MELF (D-5C) -65°C ~ 155°C
R3410

R3410

RECTIFIER

Microchip Technology

6,949 -
R3410

数据表

R34 DO-203AB, DO-5, Stud Bulk Active Standard, Reverse Polarity 100 V 1.15 V @ 90 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 100 V - 45A - - Stud Mount DO-203AB (DO-5) -65°C ~ 200°C
R34140

R34140

RECTIFIER

Microchip Technology

7,671 -
R34140

数据表

R34 DO-203AB, DO-5, Stud Bulk Active Standard, Reverse Polarity 1400 V 1.15 V @ 90 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 1400 V - 45A - - Stud Mount DO-203AB (DO-5) -65°C ~ 200°C
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