GeneSiC Semiconductor|单个二极管 - 页 3

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	技术	电压 - 直流反向 (Vr)（最大值）	电压 - 正向 (Vf)（最大值）@ If	速度	反向恢复时间 (trr)	电流 - 反向漏电 @ Vr	电容 @ Vr, F	电流 - 平均整流（Io）	等级	认证	安装类型	供应商设备封装	工作温度 - 结点
S6K DIODE GEN PURP 800V 6A DO4 GeneSiC Semiconductor	3,452	-	询价单	数据表	-	DO-203AA, DO-4, Stud	Bulk	Active	Standard	800 V	1.1 V @ 6 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 100 V	-	6A	-	-	Chassis, Stud Mount	DO-4	-65°C ~ 175°C
S6KR DIODE GEN PURP REV 800V 6A DO4 GeneSiC Semiconductor	3,912	-	询价单	数据表	-	DO-203AA, DO-4, Stud	Bulk	Active	Standard, Reverse Polarity	800 V	1.1 V @ 6 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 100 V	-	6A	-	-	Chassis, Stud Mount	DO-4	-65°C ~ 175°C
S6M DIODE GEN PURP 1KV 6A DO4 GeneSiC Semiconductor	7,205	-	询价单	数据表	-	DO-203AA, DO-4, Stud	Bulk	Active	Standard	1000 V	1.1 V @ 6 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 100 V	-	6A	-	-	Chassis, Stud Mount	DO-4	-65°C ~ 175°C
S6MR DIODE GEN PURP REV 1KV 6A DO4 GeneSiC Semiconductor	6,290	-	询价单	数据表	-	DO-203AA, DO-4, Stud	Bulk	Active	Standard, Reverse Polarity	1000 V	1.1 V @ 6 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 100 V	-	6A	-	-	Chassis, Stud Mount	DO-4	-65°C ~ 175°C
S6Q DIODE GEN PURP 1.2KV 6A DO4 GeneSiC Semiconductor	7,837	-	询价单	数据表	-	DO-203AA, DO-4, Stud	Bulk	Active	Standard	1200 V	1.1 V @ 6 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 100 V	-	6A	-	-	Chassis, Stud Mount	DO-4	-65°C ~ 175°C
S6QR DIODE GEN PURP REV 1.2KV 6A DO4 GeneSiC Semiconductor	2,316	-	询价单	数据表	-	DO-203AA, DO-4, Stud	Bulk	Active	Standard, Reverse Polarity	1200 V	1.1 V @ 6 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 100 V	-	6A	-	-	Chassis, Stud Mount	DO-4	-65°C ~ 175°C
GC05MPS12-220 DIODE SIL CARB 1.2KV 29A TO220-2 GeneSiC Semiconductor	3,581	-	询价单	数据表	-	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	1200 V	1.8 V @ 5 A	No Recovery Time > 500mA (Io)	0 ns	4 µA @ 1200 V	359pF @ 1V, 1MHz	29A	-	-	Through Hole	TO-220-2	-55°C ~ 175°C
GC10MPS12-220 DIODE SIL CARB 1.2KV 54A TO220-2 GeneSiC Semiconductor	3,074	-	询价单	数据表	SiC Schottky MPS™	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	1200 V	1.8 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	10 µA @ 1200 V	660pF @ 1V, 1MHz	54A	-	-	Through Hole	TO-220-2	-55°C ~ 175°C
1N1199AR DIODE GEN PURP REV 50V 12A DO4 GeneSiC Semiconductor	6,055	-	询价单	数据表	-	DO-203AA, DO-4, Stud	Bulk	Active	Standard, Reverse Polarity	50 V	1.1 V @ 12 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 50 V	-	12A	-	-	Chassis, Stud Mount	DO-4	-65°C ~ 200°C
1N1206A DIODE GEN PURP 600V 12A DO4 GeneSiC Semiconductor	3,028	-	询价单	数据表	-	DO-203AA, DO-4, Stud	Bulk	Active	Standard	600 V	1.1 V @ 12 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 50 V	-	12A	-	-	Chassis, Stud Mount	DO-4	-65°C ~ 200°C

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