| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)(最大值) | 电压 - 正向 (Vf)(最大值)@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流(Io) | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
GB05SLT12-252DIODE SIL CARBIDE 1.2KV 5A TO252 GeneSiC Semiconductor |
7,573 | - |
|
数据表 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 1.8 V @ 2 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 1200 V | 260pF @ 1V, 1MHz | 5A | - | - | Surface Mount | TO-252 | -55°C ~ 175°C |
|
GC05MPS12-252DIODE SIL CARB 1.2KV 27A TO252-2 GeneSiC Semiconductor |
6,730 | - |
|
数据表 |
SiC Schottky MPS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 1.8 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 4 µA @ 1200 V | 359pF @ 1V, 1MHz | 27A | - | - | Surface Mount | TO-252-2 | -55°C ~ 175°C |
|
S6BDIODE GEN PURP 100V 6A DO4 GeneSiC Semiconductor |
3,975 | - |
|
数据表 |
- | DO-203AA, DO-4, Stud | Bulk | Active | Standard | 100 V | 1.1 V @ 6 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 100 V | - | 6A | - | - | Chassis, Stud Mount | DO-4 | -65°C ~ 175°C |
|
S6BRDIODE GEN PURP REV 100V 6A DO4 GeneSiC Semiconductor |
5,296 | - |
|
数据表 |
- | DO-203AA, DO-4, Stud | Bulk | Active | Standard, Reverse Polarity | 100 V | 1.1 V @ 6 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 100 V | - | 6A | - | - | Chassis, Stud Mount | DO-4 | -65°C ~ 175°C |
|
S6DDIODE GEN PURP 200V 6A DO4 GeneSiC Semiconductor |
4,555 | - |
|
数据表 |
- | DO-203AA, DO-4, Stud | Bulk | Active | Standard | 200 V | 1.1 V @ 6 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 100 V | - | 6A | - | - | Chassis, Stud Mount | DO-4 | -65°C ~ 175°C |
|
S6DRDIODE GEN PURP REV 200V 6A DO4 GeneSiC Semiconductor |
4,886 | - |
|
数据表 |
- | DO-203AA, DO-4, Stud | Bulk | Active | Standard, Reverse Polarity | 200 V | 1.1 V @ 6 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 100 V | - | 6A | - | - | Chassis, Stud Mount | DO-4 | -65°C ~ 175°C |
|
S6GDIODE GEN PURP 400V 6A DO4 GeneSiC Semiconductor |
8,768 | - |
|
数据表 |
- | DO-203AA, DO-4, Stud | Bulk | Active | Standard | 400 V | 1.1 V @ 6 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 100 V | - | 6A | - | - | Chassis, Stud Mount | DO-4 | -65°C ~ 175°C |
|
S6GRDIODE GEN PURP REV 400V 6A DO4 GeneSiC Semiconductor |
3,180 | - |
|
数据表 |
- | DO-203AA, DO-4, Stud | Bulk | Active | Standard, Reverse Polarity | 400 V | 1.1 V @ 6 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 100 V | - | 6A | - | - | Chassis, Stud Mount | DO-4 | -65°C ~ 175°C |
|
S6JDIODE GEN PURP 600V 6A DO4 GeneSiC Semiconductor |
3,598 | - |
|
数据表 |
- | DO-203AA, DO-4, Stud | Bulk | Active | Standard | 600 V | 1.1 V @ 6 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 100 V | - | 6A | - | - | Chassis, Stud Mount | DO-4 | -65°C ~ 175°C |
|
S6JRDIODE GEN PURP REV 600V 6A DO4 GeneSiC Semiconductor |
6,449 | - |
|
数据表 |
- | DO-203AA, DO-4, Stud | Bulk | Active | Standard, Reverse Polarity | 600 V | 1.1 V @ 6 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 100 V | - | 6A | - | - | Chassis, Stud Mount | DO-4 | -65°C ~ 175°C |