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二极管阵列
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 二极管配置 | 技术 | 电流 - 平均整流 (Io)（每个二极管） | 电压 - 正向 (Vf)（最大值）@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电压 - 直流反向 (Vr)（最大值） | 工作温度 - 结点 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
MUR40040CTDIODE MODULE GP 400V 200A 2TOWER GeneSiC Semiconductor |
9,872 | - |
|
数据表 |
- | Twin Tower | Bulk | Active | 1 Pair Common Cathode | Standard | 200A | 1.3 V @ 125 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 25 µA @ 50 V | 400 V | -55°C ~ 150°C | - | - | Chassis Mount | Twin Tower |
|
|
MUR40040CTRDIODE MODULE GP 400V 200A 2TOWER GeneSiC Semiconductor |
9,392 | - |
|
数据表 |
- | Twin Tower | Bulk | Active | 1 Pair Common Anode | Standard | 200A | 1.3 V @ 125 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 25 µA @ 50 V | 400 V | -55°C ~ 150°C | - | - | Chassis Mount | Twin Tower |
|
|
MUR40060CTDIODE MODULE GP 600V 200A 2TOWER GeneSiC Semiconductor |
7,346 | - |
|
数据表 |
- | Twin Tower | Bulk | Active | 1 Pair Common Cathode | Standard | 200A | 1.3 V @ 125 A | Fast Recovery =< 500ns, > 200mA (Io) | 180 ns | 25 µA @ 50 V | 600 V | -55°C ~ 150°C | - | - | Chassis Mount | Twin Tower |
|
|
MUR40060CTRDIODE MODULE GP 600V 200A 2TOWER GeneSiC Semiconductor |
6,552 | - |
|
数据表 |
- | Twin Tower | Bulk | Active | 1 Pair Common Anode | Standard | 200A | 1.3 V @ 125 A | Fast Recovery =< 500ns, > 200mA (Io) | 180 ns | 25 µA @ 50 V | 600 V | -55°C ~ 150°C | - | - | Chassis Mount | Twin Tower |
|
MURT40010DIODE MODULE GP 100V 200A 3TOWER GeneSiC Semiconductor |
8,723 | - |
|
数据表 |
- | Three Tower | Bulk | Active | 1 Pair Common Cathode | Standard | 200A | 1.3 V @ 200 A | Fast Recovery =< 500ns, > 200mA (Io) | 125 ns | 25 µA @ 50 V | 100 V | -55°C ~ 150°C | - | - | Chassis Mount | Three Tower |
|
|
MURT40010RDIODE MODULE GP 100V 200A 3TOWER GeneSiC Semiconductor |
5,958 | - |
|
数据表 |
- | Three Tower | Bulk | Active | 1 Pair Common Anode | Standard | 200A | 1.3 V @ 200 A | Fast Recovery =< 500ns, > 200mA (Io) | 125 ns | 25 µA @ 50 V | 100 V | -55°C ~ 150°C | - | - | Chassis Mount | Three Tower |
|
|
MURT40020DIODE MODULE GP 200V 200A 3TOWER GeneSiC Semiconductor |
9,622 | - |
|
数据表 |
- | Three Tower | Bulk | Active | 1 Pair Common Cathode | Standard | 200A | 1.3 V @ 200 A | Fast Recovery =< 500ns, > 200mA (Io) | 125 ns | 25 µA @ 50 V | 200 V | -55°C ~ 150°C | - | - | Chassis Mount | Three Tower |
|
|
MURT40020RDIODE MODULE GP 200V 200A 3TOWER GeneSiC Semiconductor |
4,236 | - |
|
数据表 |
- | Three Tower | Bulk | Active | 1 Pair Common Anode | Standard | 200A | 1.3 V @ 200 A | Fast Recovery =< 500ns, > 200mA (Io) | 125 ns | 25 µA @ 50 V | 200 V | -55°C ~ 150°C | - | - | Chassis Mount | Three Tower |
|
GB2X100MPS12-227DIODE MOD SIC 1200V 185A SOT-227 GeneSiC Semiconductor |
6,906 | - |
|
数据表 |
SiC Schottky MPS™ | SOT-227-4, miniBLOC | Tube | Obsolete | 2 Independent | SiC (Silicon Carbide) Schottky | 185A (DC) | 1.8 V @ 100 A | No Recovery Time > 500mA (Io) | 0 ns | 80 µA @ 1200 V | 1200 V | -55°C ~ 175°C | - | - | Chassis Mount | SOT-227 |
|
|
MBRT600100DIODE MOD SCHOT 100V 300A 3TOWER GeneSiC Semiconductor |
7,527 | - |
|
数据表 |
- | Three Tower | Bulk | Active | 1 Pair Common Cathode | Schottky | 300A | 880 mV @ 300 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1 mA @ 20 V | 100 V | -55°C ~ 150°C | - | - | Chassis Mount | Three Tower |
