| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 二极管配置 | 技术 | 电流 - 平均整流 (Io)(每个二极管) | 电压 - 正向 (Vf)(最大值)@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电压 - 直流反向 (Vr)(最大值) | 工作温度 - 结点 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
MURT40040RDIODE MODULE GP 400V 200A 3TOWER GeneSiC Semiconductor |
39 | - |
|
数据表 |
- | Three Tower | Bulk | Active | 1 Pair Common Anode | Standard, Reverse Polarity | 200A | 1.35 V @ 200 A | Fast Recovery =< 500ns, > 200mA (Io) | 180 ns | 25 µA @ 50 V | 400 V | -55°C ~ 150°C | - | - | Chassis Mount | Three Tower |
|
GB2X50MPS12-227DIODE MOD SIC 1200V 93A SOT-227 GeneSiC Semiconductor |
248 | - |
|
数据表 |
SiC Schottky MPS™ | SOT-227-4, miniBLOC | Tube | Obsolete | 2 Independent | SiC (Silicon Carbide) Schottky | 93A (DC) | 1.8 V @ 50 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 1200 V | 1200 V | -55°C ~ 175°C | - | - | Chassis Mount | SOT-227 |
|
GB2X50MPS17-227DIODE MOD SIC 1700V 136A SOT-227 GeneSiC Semiconductor |
79 | - |
|
数据表 |
SiC Schottky MPS™ | SOT-227-4, miniBLOC | Tube | Obsolete | 2 Independent | SiC (Silicon Carbide) Schottky | 136A (DC) | 1.8 V @ 50 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 1700 V | 1700 V | -55°C ~ 175°C | - | - | Chassis Mount | SOT-227 |
|
MBRT20060RDIODE MOD SCHOTT 60V 100A 3TOWER GeneSiC Semiconductor |
67 | - |
|
数据表 |
- | Three Tower | Bulk | Active | 1 Pair Common Anode | Schottky | 100A | 800 mV @ 100 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1 mA @ 20 V | 60 V | -55°C ~ 150°C | - | - | Chassis Mount | Three Tower |
|
MUR20020CTDIODE MODULE GP 200V 100A 2TOWER GeneSiC Semiconductor |
48 | - |
|
数据表 |
- | Twin Tower | Bulk | Active | 1 Pair Common Cathode | Standard | 100A | 1.3 V @ 100 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 25 µA @ 50 V | 200 V | -55°C ~ 150°C | - | - | Chassis Mount | Twin Tower |
|
MBR2X030A045DIODE MOD SCHOTT 45V 60A SOT-227 GeneSiC Semiconductor |
39 | - |
|
数据表 |
- | SOT-227-4, miniBLOC | Bulk | Active | 2 Independent | Schottky | 60A | 700 mV @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1 mA @ 45 V | 45 V | -40°C ~ 150°C | - | - | Chassis Mount | SOT-227 |
|
MUR2X060A02DIODE MODULE GP 200V 60A SOT-227 GeneSiC Semiconductor |
60 | - |
|
数据表 |
- | SOT-227-4, miniBLOC | Bulk | Active | 2 Independent | Standard | 60A | 1 V @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 25 µA @ 200 V | 200 V | -55°C ~ 175°C | - | - | Chassis Mount | SOT-227 |
|
MUR2X100A04DIODE MODULE GP 400V 100A SOT227 GeneSiC Semiconductor |
12 | - |
|
数据表 |
- | SOT-227-4, miniBLOC | Bulk | Active | 2 Independent | Standard | 100A | 1.3 V @ 100 A | Fast Recovery =< 500ns, > 200mA (Io) | 90 ns | 25 µA @ 400 V | 400 V | -55°C ~ 175°C | - | - | Chassis Mount | SOT-227 |
|
GE2X8MPS06DDIODE ARRAY SIC 650V 19A TO247-3 GeneSiC Semiconductor |
38 | - |
|
数据表 |
SiC Schottky MPS™ | TO-247-3 | Tube | Discontinued at Digi-Key | 1 Pair Common Cathode | SiC (Silicon Carbide) Schottky | 19A (DC) | - | No Recovery Time > 500mA (Io) | - | - | 650 V | -55°C ~ 175°C | - | - | Through Hole | TO-247-3 |