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二极管阵列

制造商 系列 封装/外壳 包装 产品状态 二极管配置 技术 电流 - 平均整流 (Io)(每个二极管) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电压 - 直流反向 (Vr)(最大值) 工作温度 - 结点 等级 认证 安装类型 供应商设备封装

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 二极管配置 技术 电流 - 平均整流 (Io)(每个二极管) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电压 - 直流反向 (Vr)(最大值) 工作温度 - 结点 等级 认证 安装类型 供应商设备封装
MBR60020CTR

MBR60020CTR

DIODE MOD SCHOTT 20V 300A 2TOWER

GeneSiC Semiconductor

4,439 -
MBR60020CTR

数据表

- Twin Tower Bulk Active 1 Pair Common Anode Schottky 300A 750 mV @ 300 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 20 V 20 V -55°C ~ 150°C - - Chassis Mount Twin Tower
MBR60030CT

MBR60030CT

DIODE MOD SCHOTT 30V 300A 2TOWER

GeneSiC Semiconductor

3,621 -
MBR60030CT

数据表

- Twin Tower Bulk Active 1 Pair Common Cathode Schottky 300A 750 mV @ 300 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 20 V 30 V -55°C ~ 150°C - - Chassis Mount Twin Tower
MBR60030CTR

MBR60030CTR

DIODE MOD SCHOTT 30V 300A 2TOWER

GeneSiC Semiconductor

2,788 -
MBR60030CTR

数据表

- Twin Tower Bulk Active 1 Pair Common Anode Schottky 300A 750 mV @ 300 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 20 V 30 V -55°C ~ 150°C - - Chassis Mount Twin Tower
MBR60035CT

MBR60035CT

DIODE MOD SCHOTT 35V 300A 2TOWER

GeneSiC Semiconductor

9,077 -
MBR60035CT

数据表

- Twin Tower Bulk Active 1 Pair Common Cathode Schottky 300A 750 mV @ 300 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 20 V 35 V -55°C ~ 150°C - - Chassis Mount Twin Tower
MBR60035CTR

MBR60035CTR

DIODE MOD SCHOTT 35V 300A 2TOWER

GeneSiC Semiconductor

3,022 -
MBR60035CTR

数据表

- Twin Tower Bulk Active 1 Pair Common Anode Schottky 300A 750 mV @ 300 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 20 V 35 V -55°C ~ 150°C - - Chassis Mount Twin Tower
MBR60045CT

MBR60045CT

DIODE MOD SCHOTT 45V 300A 2TOWER

GeneSiC Semiconductor

9,881 -
MBR60045CT

数据表

- Twin Tower Bulk Active 1 Pair Common Cathode Schottky 300A 750 mV @ 300 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 20 V 45 V -55°C ~ 150°C - - Chassis Mount Twin Tower
MBR60045CTR

MBR60045CTR

DIODE MOD SCHOTT 45V 300A 2TOWER

GeneSiC Semiconductor

6,337 -
MBR60045CTR

数据表

- Twin Tower Bulk Active 1 Pair Common Anode Schottky 300A 750 mV @ 300 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 20 V 45 V -55°C ~ 150°C - - Chassis Mount Twin Tower
MBR60060CT

MBR60060CT

DIODE MOD SCHOTT 60V 300A 2TOWER

GeneSiC Semiconductor

8,045 -
MBR60060CT

数据表

- Twin Tower Bulk Active 1 Pair Common Cathode Schottky 300A 800 mV @ 300 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 20 V 60 V -50°C ~ 150°C - - Chassis Mount Twin Tower
MBR60060CTR

MBR60060CTR

DIODE MOD SCHOTT 60V 300A 2TOWER

GeneSiC Semiconductor

3,212 -
MBR60060CTR

数据表

- Twin Tower Bulk Active 1 Pair Common Anode Schottky 300A 800 mV @ 300 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 20 V 60 V -55°C ~ 150°C - - Chassis Mount Twin Tower
MBR60080CT

MBR60080CT

DIODE MOD SCHOTT 80V 300A 2TOWER

GeneSiC Semiconductor

5,925 -
MBR60080CT

数据表

- Twin Tower Bulk Active 1 Pair Common Cathode Schottky 300A 880 mV @ 300 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 20 V 80 V -55°C ~ 150°C - - Chassis Mount Twin Tower
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