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单个 IGBTs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | IGBT 类型 | 电压 - 集电极发射极击穿（最大值） | 电流 - 集电极脉冲 (Icm) | 导通电压 (Vce(on)）（最大值）@ Vge, Ic | 功率 - 最大值 | 安装类型 | 开关能量 | 输入类型 | 电流 - 集电极 (Ic)（最大值） | 栅极电荷 | 导通/关断时间 (Td) @ 25°C | 认证 | 测试条件 | 供应商设备封装 | 等级 | 反向恢复时间 (trr) | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
APT102GA60LIGBT PT 600V 183A TO264 Microchip Technology |
8,325 | - |
|
数据表 |
- | TO-264-3, TO-264AA | Tube | Active | PT | 600 V | 307 A | 2.5V @ 15V, 62A | 780 W | Through Hole | 1.354mJ (on), 1.614mJ (off) | Standard | 183 A | 294 nC | 28ns/212ns | - | 400V, 62A, 4.7Ohm, 15V | TO-264 [L] | - | - | -55°C ~ 150°C (TJ) |
|
APT102GA60B2IGBT 600V 183A 780W TO247 Microchip Technology |
2,847 | - |
|
数据表 |
POWER MOS 8™ | TO-247-3 Variant | Tube | Obsolete | PT | 600 V | 307 A | 2.5V @ 15V, 62A | 780 W | Through Hole | 1.354mJ (on), 1.614mJ (off) | Standard | 183 A | 294 nC | 28ns/212ns | - | 400V, 62A, 4.7Ohm, 15V | - | - | - | -55°C ~ 150°C (TJ) |
|
|
APT80GA90LD40IGBT PT 900V 145A TO264 Microchip Technology |
3,262 | - |
|
数据表 |
POWER MOS 8™ | TO-264-3, TO-264AA | Tube | Active | PT | 900 V | 239 A | 3.1V @ 15V, 47A | 625 W | Through Hole | 1652µJ (on), 1389µJ (off) | Standard | 145 A | 200 nC | 18ns/149ns | - | 600V, 47A, 4.7Ohm, 15V | TO-264 | - | 25 ns | - |
|
|
APT85GR120LIGBT NPT 1200V 170A TO264 Microchip Technology |
4,533 | - |
|
数据表 |
- | TO-264-3, TO-264AA | Tube | Active | NPT | 1200 V | 340 A | 3.2V @ 15V, 85A | 962 W | Through Hole | 6mJ (on), 3.8mJ (off) | Standard | 170 A | 660 nC | 43ns/300ns | - | 600V, 85A, 4.3Ohm, 15V | TO-264 | - | - | -55°C ~ 150°C (TJ) |
|
APT35GP120BGIGBT PT 1200V 96A TO247 Microchip Technology |
8,854 | - |
|
数据表 |
POWER MOS 7® | TO-247-3 | Tube | Active | PT | 1200 V | 140 A | 3.9V @ 15V, 35A | 543 W | Through Hole | 750µJ (on), 680µJ (off) | Standard | 96 A | 150 nC | 16ns/94ns | - | 600V, 35A, 5Ohm, 15V | TO-247 [B] | - | - | -55°C ~ 150°C (TJ) |
|
|
APT75GN120B2GIGBT TRENCH FIELD STP 1200V 200A Microchip Technology |
3,991 | - |
|
数据表 |
- | TO-247-3 Variant | Tube | Active | Trench Field Stop | 1200 V | 225 A | 2.1V @ 15V, 75A | 833 W | Through Hole | 8045µJ (on), 7640µJ (off) | Standard | 200 A | 425 nC | 60ns/620ns | - | 800V, 75A, 1Ohm, 15V | - | - | - | -55°C ~ 150°C (TJ) |
|
|
APT50GT120B2RDQ2GIGBT NPT 1200V 94A TO247 Microchip Technology |
4,803 | - |
|
数据表 |
Thunderbolt IGBT® | TO-247-3 | Tube | Active | NPT | 1200 V | 150 A | 3.7V @ 15V, 50A | 625 W | Through Hole | 2330µJ (off) | Standard | 94 A | 340 nC | 24ns/230ns | - | 800V, 50A, 4.7Ohm, 15V | - | - | - | -55°C ~ 150°C (TJ) |
|
|
APT45GP120BGIGBT PT 1200V 100A TO247 Microchip Technology |
2,961 | - |
|
数据表 |
POWER MOS 7® | TO-247-3 | Tube | Active | PT | 1200 V | 170 A | 3.9V @ 15V, 45A | 625 W | Through Hole | 900µJ (on), 904µJ (off) | Standard | 100 A | 185 nC | 18ns/102ns | - | 600V, 45A, 5Ohm, 15V | TO-247 [B] | - | - | -55°C ~ 150°C (TJ) |
|
|
APT40GP90B2DQ2GIGBT PT 900V 101A Microchip Technology |
5,125 | - |
|
数据表 |
POWER MOS 7® | TO-247-3 Variant | Tube | Active | PT | 900 V | 160 A | 3.9V @ 15V, 40A | 543 W | Through Hole | 795µJ (off) | Standard | 101 A | 145 nC | 14ns/90ns | - | 600V, 40A, 4.3Ohm, 15V | - | - | - | -55°C ~ 150°C (TJ) |
|
|
APT50GT120LRDQ2GIGBT NPT 1200V 106A TO264 Microchip Technology |
7,239 | - |
|
数据表 |
Thunderbolt IGBT® | TO-264-3, TO-264AA | Tube | Active | NPT | 1200 V | 150 A | 3.7V @ 15V, 50A | 694 W | Through Hole | 2585µJ (on), 1910µJ (off) | Standard | 106 A | 240 nC | 23ns/215ns | - | 800V, 50A, 1Ohm, 15V | TO-264 [L] | - | - | -55°C ~ 150°C (TJ) |
