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单个 IGBTs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | IGBT 类型 | 电压 - 集电极发射极击穿（最大值） | 电流 - 集电极脉冲 (Icm) | 导通电压 (Vce(on)）（最大值）@ Vge, Ic | 功率 - 最大值 | 安装类型 | 开关能量 | 输入类型 | 电流 - 集电极 (Ic)（最大值） | 栅极电荷 | 导通/关断时间 (Td) @ 25°C | 认证 | 测试条件 | 供应商设备封装 | 等级 | 反向恢复时间 (trr) | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
APT25GP120BDQ1GIGBT PT 1200V 69A TO247 Microchip Technology |
9,067 | - |
|
数据表 |
POWER MOS 7® | TO-247-3 | Tube | Active | PT | 1200 V | 90 A | 3.9V @ 15V, 25A | 417 W | Through Hole | 500µJ (on), 440µJ (off) | Standard | 69 A | 110 nC | 12ns/70ns | - | 600V, 25A, 5Ohm, 15V | TO-247 [B] | - | - | -55°C ~ 150°C (TJ) |
|
APT64GA90LD30IGBT PT 900V 117A TO264 Microchip Technology |
2,569 | - |
|
数据表 |
POWER MOS 8™ | TO-264-3, TO-264AA | Tube | Active | PT | 900 V | 193 A | 3.1V @ 15V, 38A | 500 W | Through Hole | 1192µJ (on), 1088µJ (off) | Standard | 117 A | 162 nC | 18ns/131ns | - | 600V, 38A, 4.7Ohm, 15V | TO-264 [L] | - | - | -55°C ~ 150°C (TJ) |
|
|
APT33GF120LRDQ2GIGBT 1200V 64A 357W TO264 Microchip Technology |
5,752 | - |
|
数据表 |
- | TO-264-3, TO-264AA | Tube | Obsolete | NPT | 1200 V | 75 A | 3V @ 15V, 25A | 357 W | Through Hole | 1.315mJ (on), 1.515mJ (off) | Standard | 64 A | 170 nC | 14ns/185ns | - | 800V, 25A, 4.3Ohm, 15V | TO-264 [L] | - | - | -55°C ~ 150°C (TJ) |
|
|
APT50GP60BGIGBT PT 600V 100A TO247 Microchip Technology |
2,244 | - |
|
数据表 |
POWER MOS 7® | TO-247-3 | Tube | Active | PT | 600 V | 190 A | 2.7V @ 15V, 50A | 625 W | Through Hole | 465µJ (on), 637µJ (off) | Standard | 100 A | 165 nC | 19ns/83ns | - | 400V, 50A, 5Ohm, 15V | TO-247 [B] | - | - | -55°C ~ 150°C (TJ) |
|
|
APT40GP60BGIGBT PT 600V 100A TO247 Microchip Technology |
9,603 | - |
|
数据表 |
POWER MOS 7® | TO-247-3 | Tube | Active | PT | 600 V | 160 A | 2.7V @ 15V, 40A | 543 W | Through Hole | 385µJ (on), 352µJ (off) | Standard | 100 A | 135 nC | 20ns/64ns | - | 400V, 40A, 5Ohm, 15V | TO-247 [B] | - | - | -55°C ~ 150°C (TJ) |
|
APT40GP60B2DQ2GIGBT PT 600V 100A Microchip Technology |
8,713 | - |
|
数据表 |
POWER MOS 7® | TO-247-3 Variant | Tube | Active | PT | 600 V | 160 A | 2.7V @ 15V, 40A | 543 W | Through Hole | 385µJ (on), 350µJ (off) | Standard | 100 A | 135 nC | 20ns/64ns | - | 400V, 40A, 5Ohm, 15V | - | - | - | -55°C ~ 150°C (TJ) |
|
|
APT70GR120LIGBT NPT 1200V 160A TO264 Microchip Technology |
4,755 | - |
|
数据表 |
- | TO-264-3, TO-264AA | Tube | Active | NPT | 1200 V | 280 A | 3.2V @ 15V, 70A | 961 W | Through Hole | 3.82mJ (on), 2.58mJ (off) | Standard | 160 A | 544 nC | 33ns/278ns | - | 600V, 70A, 4.3Ohm, 15V | TO-264 | - | - | -55°C ~ 150°C (TJ) |
|
|
APT70GR120B2IGBT NPT 1200V 160A TO247 Microchip Technology |
3,639 | - |
|
数据表 |
- | TO-247-3 | Tube | Active | NPT | 1200 V | 280 A | 3.2V @ 15V, 70A | 961 W | Through Hole | 3.82mJ (on), 2.58mJ (off) | Standard | 160 A | 544 nC | 33ns/278ns | - | 600V, 70A, 4.3Ohm, 15V | TO-247 | - | - | -55°C ~ 150°C (TJ) |
|
|
APT50GP60B2DQ2GIGBT PT 600V 150A Microchip Technology |
6,824 | - |
|
数据表 |
POWER MOS 7® | TO-247-3 Variant | Tube | Active | PT | 600 V | 190 A | 2.7V @ 15V, 50A | 625 W | Through Hole | 465µJ (on), 635µJ (off) | Standard | 150 A | 165 nC | 19ns/85ns | - | 400V, 50A, 4.3Ohm, 15V | - | - | - | -55°C ~ 150°C (TJ) |
|
|
APT50GS60BRDQ2GIGBT NPT 600V 93A TO247 Microchip Technology |
6,927 | - |
|
数据表 |
Thunderbolt IGBT® | TO-247-3 | Tube | Active | NPT | 600 V | 195 A | 3.15V @ 15V, 50A | 415 W | Through Hole | 755µJ (off) | Standard | 93 A | 235 nC | 16ns/225ns | - | 400V, 40A, 4.7Ohm, 15V | TO-247 [B] | - | 25 ns | -55°C ~ 150°C (TJ) |
