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单个场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 技术 配置 增益 电压 - 测试 电流额定值(安培) 噪声系数 电流 - 测试 频率 功率 - 输出 额定电压 等级 供应商设备封装 认证 安装类型

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 配置 增益 电压 - 测试 电流额定值(安培) 噪声系数 电流 - 测试 频率 功率 - 输出 额定电压 等级 供应商设备封装 认证 安装类型
BCF240T

BCF240T

RF MOSFET MESFET 8V DIE

BeRex Inc

2,300 -
BCF240T

数据表

- Die Tray Active MESFET - 7.7dB 8 V 960mA - 480 mA 26.5GHz 30.4dBm 12 V - Die - -
MHT1004GNR3

MHT1004GNR3

RF MOSFET LDMOS 32V OM780-2

Freescale Semiconductor

46 -
MHT1004GNR3

数据表

- OM-780-2G Bulk Obsolete LDMOS - 15.2dB 32 V 10µA - 100 mA 2.45GHz 280W 65 V - OM-780-2 Gull - Chassis Mount
MRF8S9170NR3

MRF8S9170NR3

RF MOSFET

NXP USA Inc.

944 -
MRF8S9170NR3

数据表

* - Bulk Active - - - - - - - - - - - - - -
CLF1G0060-30

CLF1G0060-30

RF MOSFET GAN HEMT 50V CDFM2

Ampleon USA Inc.

381 -
CLF1G0060-30

数据表

- SOT-1227A Tray Active GaN HEMT - 13dB 50 V - - 70 mA 3GHz ~ 3.5GHz 30W 150 V - CDFM2 - -
AFT21S140W02SR3

AFT21S140W02SR3

RF MOSFET LDMOS 28V NI780

NXP Semiconductors

500 -
AFT21S140W02SR3

数据表

- NI-780S Bulk Obsolete LDMOS N-Channel 19.3dB 28 V - - 800 mA 2.11GHz ~ 2.17GHz 32W 65 V - NI-780S - Surface Mount
A2T18H455W23NR6

A2T18H455W23NR6

RF MOSFET LDMOS 31.5V OM1230-42

NXP Semiconductors

153 -
A2T18H455W23NR6

数据表

- OM-1230-4L2S Bulk Obsolete LDMOS N-Channel 14.5dB 31.5 V 10µA - 1.08 A 1.805GHz ~ 1.88GHz 87W 65 V - OM-1230-4L2S - Surface Mount
MMRF1306HR5

MMRF1306HR5

RF MOSFET LDMOS 50V NI1230

Freescale Semiconductor

30 -
MMRF1306HR5

数据表

- SOT-979A Bulk Active LDMOS Dual 24dB 50 V - - 100 mA 230MHz 1250W 133 V - NI-1230-4H - Chassis Mount
AFT21H350W03SR6

AFT21H350W03SR6

RF MOSFET LDMOS 28V NI1230

NXP Semiconductors

300 -
AFT21H350W03SR6

数据表

- NI-1230-4S Bulk Obsolete LDMOS N-Channel 16.4dB 28 V 10µA - 763 mA 2.11GHz ~ 2.17GHz 63W 65 V - NI-1230-4S - Surface Mount
AFT21S230SR3

AFT21S230SR3

RF MOSFET LDMOS 28V NI780

NXP Semiconductors

2,231 -
AFT21S230SR3

数据表

- NI-780S-6 Bulk Obsolete LDMOS N-Channel 16.7dB 28 V - - 1.5 A 2.11GHz ~ 2.17GHz 50W 65 V - NI-780S-6 - Surface Mount
A2T21H360-24SR6

A2T21H360-24SR6

RF MOSFET LDMOS

NXP USA Inc.

2,550 -
A2T21H360-24SR6

数据表

* - Bulk Active - - - - - - - - - - - - - -
SA2T18H450W19SR6

SA2T18H450W19SR6

RF MOSFET LDMOS 30V NI1230

NXP Semiconductors

22,050 -
SA2T18H450W19SR6

数据表

- NI-1230S-4S4S Bulk Obsolete LDMOS Dual 16.6dB 30 V 10µA - 800 mA 1.805GHz ~ 1.88GHz 89W 65 V - NI-1230S-4S4S - Chassis Mount
A2T21H450W19SR6

A2T21H450W19SR6

RF MOSFET LDMOS 30V NI1230

NXP Semiconductors

277 -
A2T21H450W19SR6

数据表

- NI-1230S-4S4S Bulk Obsolete LDMOS - 15.7dB 30 V 10µA - 800 mA 2.11GHz ~ 2.2GHz 89W 65 V - NI-1230S-4S4S - Chassis Mount
AFT18HW355SR5

AFT18HW355SR5

RF MOSFET

NXP USA Inc.

50 -
AFT18HW355SR5

数据表

* - Bulk Active - - - - - - - - - - - - - -
MRF6VP11KGSR5

MRF6VP11KGSR5

RF MOSFET LDMOS 50V NI1230

NXP Semiconductors

1,750 -
MRF6VP11KGSR5

数据表

- NI-1230-4S GW Bulk Obsolete LDMOS (Dual) 2 N-Channel 26dB 50 V 100µA - 150 mA 1.8MHz ~ 150MHz 1000W 110 V - NI-1230-4S GULL - Surface Mount
MRFE6VP8600HR5

MRFE6VP8600HR5

RF MOSFET LDMOS 50V NI1230

NXP Semiconductors

890 -
MRFE6VP8600HR5

数据表

- NI-1230 Bulk Obsolete LDMOS Dual, Common Source 19.3dB 50 V 20µA - 1.4 A 470MHz ~ 860MHz 600W 130 V - NI-1230 - Chassis Mount
MMRF1006HR5

MMRF1006HR5

RF MOSFET LDMOS 50V NI1230

Freescale Semiconductor

35 -
MMRF1006HR5

数据表

- SOT-979A Bulk Active LDMOS - 20dB 50 V - - 150 mA 450MHz 1000W 120 V - NI-1230-4H - Chassis Mount
BLC6G27LS-100,118

BLC6G27LS-100,118

RF MOSFET

NXP Semiconductors

100 -
BLC6G27LS-100,118

数据表

* - Bulk Active - - - - - - - - - - - - - -
PD55015TR-E

PD55015TR-E

RF MOSFET LDMOS 12.5V PWRSO-10RF

STMicroelectronics

48 -
PD55015TR-E

数据表

- PowerSO-10RF Exposed Bottom Pad (2 Formed Leads) Tape & Reel (TR) Active LDMOS - 14dB 12.5 V 5A - 150 mA 500MHz 15W 40 V - PowerSO-10RF (Formed Lead) - -
CGH60008D-GP4

CGH60008D-GP4

RF MOSFET HEMT 28V DIE

MACOM Technology Solutions

60 -
CGH60008D-GP4

数据表

GaN Die Tray Active HEMT - 15dB 28 V - - 100 mA 6GHz 8W 84 V - Die - -
MRF136

MRF136

RF MOSFET 28V 211-07

MACOM Technology Solutions

87 -
MRF136

数据表

- 211-07 Tray Active MOSFET (Metal Oxide) N-Channel 16dB 28 V 2.5A 1dB 25 mA 400MHz 15W 65 V - 211-07, Style 2 - -
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