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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
IXKP20N60C5M

IXKP20N60C5M

MOSFET N-CH 600V 7.6A TO220ABFP

IXYS

6,484 -
IXKP20N60C5M

数据表

CoolMOS™ TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 7.6A (Tc) 10V 200mOhm @ 10A, 10V Through Hole 3.5V @ 1.1mA 30 nC @ 10 V 600 V ±20V 1520 pF @ 100 V - - TO-220ABFP - - -55°C ~ 150°C (TJ)
IXTV110N25TS

IXTV110N25TS

MOSFET N-CH 250V 110A PLUS220SMD

IXYS

9,800 -
IXTV110N25TS

数据表

- PLUS-220SMD Tube Obsolete N-Channel MOSFET (Metal Oxide) 110A (Tc) 10V 24mOhm @ 55A, 10V Surface Mount 4.5V @ 1mA 157 nC @ 10 V 250 V ±20V 9400 pF @ 25 V - - PLUS-220SMD - 694W (Tc) -55°C ~ 150°C (TJ)
IXTP32N20T

IXTP32N20T

MOSFET N-CH 200V 32A TO220AB

IXYS

3,549 -
IXTP32N20T

数据表

Trench TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 32A (Tc) 10V 72mOhm @ 16A, 10V Through Hole 4.5V @ 250µA 38 nC @ 10 V 200 V ±20V 1760 pF @ 25 V - - TO-220-3 - 200W (Tc) -55°C ~ 175°C (TJ)
IXTA460P2

IXTA460P2

MOSFET N-CH 500V 24A TO263

IXYS

36 -
IXTA460P2

数据表

PolarP2™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 24A (Tc) 10V 270mOhm @ 12A, 10V Surface Mount 4.5V @ 250µA 48 nC @ 10 V 500 V ±30V 2890 pF @ 25 V - - TO-263AA - 480W (Tc) -55°C ~ 150°C (TJ)
IXFH12N100Q

IXFH12N100Q

MOSFET N-CH 1000V 12A TO247AD

IXYS

54 -
IXFH12N100Q

数据表

HiPerFET™, Q Class TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 12A (Tc) 10V 1.05Ohm @ 6A, 10V Through Hole 5.5V @ 4mA 90 nC @ 10 V 1000 V ±20V 2900 pF @ 25 V - - TO-247AD (IXFH) - 300W (Tc) -55°C ~ 150°C (TJ)
IXFX64N60Q3

IXFX64N60Q3

MOSFET N-CH 600V 64A PLUS247-3

IXYS

17 -
IXFX64N60Q3

数据表

HiPerFET™ TO-247-3 Variant Tube Obsolete N-Channel MOSFET (Metal Oxide) 64A (Tc) 10V 95mOhm @ 32A, 10V Through Hole 6.5V @ 4mA 190 nC @ 10 V 600 V ±30V 9930 pF @ 25 V - - PLUS247™-3 - 1250W (Tc) -55°C ~ 150°C (TJ)
IXFZ520N075T2

IXFZ520N075T2

MOSFET N-CH 75V 465A DE475

IXYS

60 -
IXFZ520N075T2

数据表

HiPerFET™, TrenchT2™ 6-SMD, Flat Leads Tube Obsolete N-Channel MOSFET (Metal Oxide) 465A (Tc) 10V 1.3mOhm @ 100A, 10V Surface Mount 4V @ 8mA 545 nC @ 10 V 75 V ±20V 41000 pF @ 25 V - - DE475 - 600W (Tc) -55°C ~ 175°C (TJ)
VMO650-01F

VMO650-01F

MOSFET N-CH 100V 690A Y3-DCB

IXYS

2 -
VMO650-01F

数据表

HiPerFET™ Y3-DCB Bulk Obsolete N-Channel MOSFET (Metal Oxide) 690A (Tc) 10V 1.8mOhm @ 500mA, 10V Chassis Mount 6V @ 130mA 2300 nC @ 10 V 100 V ±20V 59000 pF @ 25 V - - Y3-DCB - 2500W (Tc) -40°C ~ 150°C (TJ)
MMIX1F520N075T2

MMIX1F520N075T2

MOSFET N-CH 75V 500A 24SMPD

IXYS

8,760 -
MMIX1F520N075T2

数据表

GigaMOS™, TrenchT2™ 24-PowerSMD, 21 Leads Tube Active N-Channel MOSFET (Metal Oxide) 500A (Tc) 10V 1.6mOhm @ 100A, 10V Surface Mount 5V @ 8mA 545 nC @ 10 V 75 V ±20V 41000 pF @ 25 V - - 24-SMPD - 830W (Tc) -55°C ~ 175°C (TJ)
IXTK17N120L

IXTK17N120L

MOSFET N-CH 1200V 17A TO264

IXYS

4,512 -
IXTK17N120L

数据表

Linear TO-264-3, TO-264AA Tube Active N-Channel MOSFET (Metal Oxide) 17A (Tc) 20V 900mOhm @ 8.5A, 20V Through Hole 5V @ 250µA 155 nC @ 15 V 1200 V ±30V 8300 pF @ 25 V - - TO-264 (IXTK) - 700W (Tc) -55°C ~ 150°C (TJ)
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