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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
IXFT80N08

IXFT80N08

MOSFET N-CH 80V 80A TO268

IXYS

6,640 -
IXFT80N08

数据表

HiPerFET™ TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 80A (Tc) 10V 9mOhm @ 40A, 10V Surface Mount 4V @ 4mA 180 nC @ 10 V 80 V ±20V 4800 pF @ 25 V - - TO-268AA - 300W (Tc) -55°C ~ 150°C (TJ)
IXTH52N65X

IXTH52N65X

MOSFET N-CH 650V 52A TO247

IXYS

9,881 -
IXTH52N65X

数据表

Ultra X TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 52A (Tc) 10V 68mOhm @ 26A, 10V Through Hole 5V @ 250µA 113 nC @ 10 V 650 V ±30V 4350 pF @ 25 V - - TO-247 (IXTH) - 660W (Tc) -55°C ~ 150°C (TJ)
IXTH12N90

IXTH12N90

MOSFET N-CH 900V 12A TO247

IXYS

2,360 -
IXTH12N90

数据表

MegaMOS™ TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 12A (Tc) 10V 900mOhm @ 6A, 10V Through Hole 4.5V @ 250µA 170 nC @ 10 V 900 V ±20V 4500 pF @ 25 V - - TO-247 (IXTH) - 300W (Tc) -55°C ~ 150°C (TJ)
IXFH17N80Q

IXFH17N80Q

MOSFET N-CH 800V 17A TO247AD

IXYS

4,178 -
IXFH17N80Q

数据表

HiPerFET™, Q Class TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 17A (Tc) 10V 600mOhm @ 500mA, 10V Through Hole 4.5V @ 4mA 95 nC @ 10 V 800 V ±20V 3600 pF @ 25 V - - TO-247AD (IXFH) - 400W (Tc) -55°C ~ 150°C (TJ)
IXTT88N15

IXTT88N15

MOSFET N-CH 150V 88A TO268

IXYS

5,144 -
IXTT88N15

数据表

- TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Box Obsolete N-Channel MOSFET (Metal Oxide) 88A (Tc) 10V 22mOhm @ 44A, 10V Surface Mount 4V @ 250µA 170 nC @ 10 V 150 V ±20V 4000 pF @ 25 V - - TO-268AA - 400W (Tc) -55°C ~ 150°C (TJ)
LSIC1MO120T0120-TU

LSIC1MO120T0120-TU

1200V/120MOHM SIC MOSFET TO-263-

IXYS

3,188 -
LSIC1MO120T0120-TU

数据表

- TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tube Active N-Channel SiCFET (Silicon Carbide) 27A (Tc) - - Surface Mount - - 1200 V - - - - TO-263-7 - - -
IXTA02N450HV

IXTA02N450HV

MOSFET N-CH 4500V 200MA TO263

IXYS

6,510 -
IXTA02N450HV

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 200mA (Tc) 10V 750Ohm @ 10mA, 10V Surface Mount 6.5V @ 250µA 10.4 nC @ 10 V 4500 V ±20V 256 pF @ 25 V - - TO-263AA - 113W (Tc) -55°C ~ 150°C (TJ)
IXFH12N90

IXFH12N90

MOSFET N-CH 900V 12A TO247AD

IXYS

4,983 -
IXFH12N90

数据表

HiPerFET™ TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 12A (Tc) 10V 900mOhm @ 6A, 10V Through Hole 4.5V @ 4mA 155 nC @ 10 V 900 V ±20V 4200 pF @ 25 V - - TO-247AD (IXFH) - 300W (Tc) -55°C ~ 150°C (TJ)
IXTH12N100

IXTH12N100

MOSFET N-CH 1000V 12A TO247

IXYS

3,793 -
IXTH12N100

数据表

MegaMOS™ TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 12A (Tc) 10V 1.05Ohm @ 6A, 10V Through Hole 4.5V @ 250µA 170 nC @ 10 V 1000 V ±20V 4000 pF @ 25 V - - TO-247 (IXTH) - 300W (Tc) -55°C ~ 150°C (TJ)
IXFH50N60X

IXFH50N60X

MOSFET N-CH 600V 50A TO247

IXYS

8,992 -
IXFH50N60X

数据表

HiPerFET™, Ultra X TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 50A (Tc) 10V 73mOhm @ 25A, 10V Through Hole 4.5V @ 4mA 116 nC @ 10 V 600 V ±30V 4660 pF @ 25 V - - TO-247 (IXTH) - 660W (Tc) -55°C ~ 150°C (TJ)
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