Transphorm|场效应晶体管（FETs）、MOSFETs - 页 3

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
TPH3207WS GANFET N-CH 650V 50A TO247-3 Transphorm	6,522	-	询价单	数据表	-	TO-247-3	Tube	Obsolete	N-Channel	GaNFET (Gallium Nitride)	50A (Tc)	10V	41mOhm @ 32A, 8V	Through Hole	2.65V @ 700µA	42 nC @ 8 V	650 V	±18V	2197 pF @ 400 V	-	-	TO-247-3	-	178W (Tc)	-55°C ~ 150°C (TJ)
TPH3202PD GANFET N-CH 600V 9A TO220AB Transphorm	8,196	-	询价单	数据表	-	TO-220-3	Tube	Obsolete	N-Channel	GaNFET (Gallium Nitride)	9A (Tc)	10V	350mOhm @ 5.5A, 8V	Through Hole	2.5V @ 250µA	9.3 nC @ 4.5 V	600 V	±18V	760 pF @ 480 V	-	-	TO-220AB	-	65W (Tc)	-55°C ~ 175°C (TJ)
TPH3202LS GANFET N-CH 600V 9A 3PQFN Transphorm	3,416	-	询价单	数据表	-	3-PowerDFN	Tube	Obsolete	N-Channel	GaNFET (Gallium Nitride)	9A (Tc)	10V	350mOhm @ 5.5A, 8V	Surface Mount	2.5V @ 250µA	9.3 nC @ 4.5 V	600 V	±18V	760 pF @ 480 V	-	-	3-PQFN (8x8)	-	65W (Tc)	-55°C ~ 175°C (TJ)
TPH3208PD GANFET N-CH 650V 20A TO220AB Transphorm	6,493	-	询价单	数据表	-	TO-220-3	Tube	Obsolete	N-Channel	GaNFET (Gallium Nitride)	20A (Tc)	10V	130mOhm @ 13A, 8V	Through Hole	2.6V @ 300µA	14 nC @ 8 V	650 V	±18V	760 pF @ 400 V	-	-	TO-220AB	-	96W (Tc)	-55°C ~ 150°C
TPH3208LS GANFET N-CH 650V 20A 3PQFN Transphorm	4,216	-	询价单	数据表	-	3-PowerDFN	Tube	Obsolete	N-Channel	GaNFET (Gallium Nitride)	20A (Tc)	10V	130mOhm @ 13A, 8V	Surface Mount	2.6V @ 300µA	14 nC @ 8 V	650 V	±18V	760 pF @ 400 V	-	-	3-PQFN (8x8)	-	96W (Tc)	-55°C ~ 150°C (TJ)
TPH3205WSB GANFET N-CH 650V 36A TO247-3 Transphorm	7,363	-	询价单	数据表	-	TO-247-3	Tube	Obsolete	N-Channel	GaNFET (Gallium Nitride)	36A (Tc)	10V	60mOhm @ 22A, 8V	Through Hole	2.6V @ 700µA	42 nC @ 8 V	650 V	±18V	2200 pF @ 400 V	-	-	TO-247-3	-	125W (Tc)	-55°C ~ 175°C (TJ)
TPH3206LDGB GANFET N-CH 650V 16A PQFN Transphorm	4,066	-	询价单	数据表	-	3-PowerDFN	Tube	Obsolete	N-Channel	GaNFET (Gallium Nitride)	16A (Tc)	10V	180mOhm @ 11A, 8V	Surface Mount	2.6V @ 500µA	9.3 nC @ 4.5 V	650 V	±18V	760 pF @ 480 V	-	-	3-PQFN (8x8)	-	81W (Tc)	-55°C ~ 150°C (TJ)
TPH3212PS GANFET N-CH 650V 27A TO220AB Transphorm	9,629	-	询价单	数据表	-	TO-220-3	Tube	Obsolete	N-Channel	GaNFET (Cascode Gallium Nitride FET)	27A (Tc)	10V	72mOhm @ 17A, 8V	Through Hole	2.6V @ 400uA	14 nC @ 8 V	650 V	±18V	1130 pF @ 400 V	-	-	TO-220AB	-	104W (Tc)	-55°C ~ 150°C (TJ)
TPH3206PSB GANFET N-CH 650V 16A TO220AB Transphorm	8,761	-	询价单	数据表	-	TO-220-3	Tube	Obsolete	N-Channel	GaNFET (Gallium Nitride)	16A (Tc)	10V	180mOhm @ 10A, 8V	Through Hole	2.6V @ 500µA	6.2 nC @ 4.5 V	650 V	±18V	720 pF @ 480 V	-	-	TO-220AB	-	81W (Tc)	-55°C ~ 150°C (TJ)
TPH3206LDB GANFET N-CH 650V 16A PQFN Transphorm	2,091	-	询价单	数据表	-	4-PowerDFN	Tube	Obsolete	N-Channel	GaNFET (Gallium Nitride)	16A (Tc)	10V	180mOhm @ 10A, 8V	Surface Mount	2.6V @ 500µA	6.2 nC @ 4.5 V	650 V	±18V	720 pF @ 480 V	-	-	4-PQFN (8x8)	-	81W (Tc)	-55°C ~ 150°C (TJ)

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