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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
TP65H480G4JSGB-TRGANFET N-CH 650V 3.6A QFN5X6 Transphorm |
3,886 | - |
|
数据表 |
SuperGaN® | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 3.6A (Tc) | 6V | 560mOhm @ 3A, 6V | Surface Mount | 2.8V @ 500µA | 5 nC @ 10 V | 650 V | ±10V | 414 pF @ 400 V | - | - | 8-PQFN (5x6) | - | 13.2W (Tc) | -55°C ~ 150°C (TJ) |
|
|
TP65H300G4LSGB-TRGANFET N-CH 650V 6.5A QFN8X8 Transphorm |
2,893 | - |
|
数据表 |
SuperGaN® | 8-VDFN Exposed Pad | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 6.5A (Tc) | 6V | 312mOhm @ 6.5A, 6V | Surface Mount | 2.8V @ 500µA | 8.8 nC @ 10 V | 650 V | ±12V | 730 pF @ 400 V | - | - | 8-PQFN (8x8) | - | 21W (Tc) | -55°C ~ 150°C (TJ) |
|
|
TP65H300G4JSGB-TRGANFET N-CH 650V 9.2A QFN5X6 Transphorm |
3,899 | - |
|
数据表 |
SuperGaN® | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 9.2A (Tc) | 6V | 312mOhm @ 6.5A, 6V | Surface Mount | 2.8V @ 500µA | 3.5 nC @ 10 V | 650 V | ±10V | 400 pF @ 400 V | - | - | 8-PQFN (5x6) | - | 41.6W (Tc) | -55°C ~ 150°C (TJ) |
|
|
TP65H150G4LSGGAN FET N-CH 650V PQFN Transphorm |
2,674 | - |
|
数据表 |
- | 3-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 13A (Tc) | 10V | 180mOhm @ 8.5A, 10V | Surface Mount | 4.8V @ 500µA | 8 nC @ 10 V | 650 V | ±20V | 598 pF @ 400 V | - | - | 3-PQFN (8x8) | - | 52W (Tc) | -55°C ~ 150°C (TJ) |
|
|
TP65H100G4LSGB-TRHi Volt FETs Transphorm |
2,960 | - |
|
数据表 |
SuperGaN® | 8-VDFN Exposed Pad | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 18.9A (Tc) | 10V | 110mOhm @ 12A, 10V | Surface Mount | 4.1V @ 1.8mA | 14.4 nC @ 10 V | 650 V | ±20V | 818 pF @ 400 V | - | - | 8-PQFN (8x8) | - | 65.8W (Tc) | -55°C ~ 150°C (TJ) |
|
|
TP65H480G4JSGMOSFET 650V, 480mOhm Transphorm |
5,477 | - |
|
数据表 |
SuperGaN® | 3-PowerTDFN | Bulk | Active | N-Channel | GaNFET (Gallium Nitride) | 3.6A (Tc) | 8V | 560mOhm @ 3.4A, 8V | Surface Mount | 2.8V @ 500µA | 9 nC @ 8 V | 650 V | ±18V | 760 pF @ 400 V | - | - | 3-PQFN (5x6) | - | 13.2W (Tc) | -55°C ~ 150°C (TJ) |
|
|
TP65H150G4LSG-TR650 V 13 A GAN FET Transphorm |
2,832 | - |
|
数据表 |
- | 3-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 13A (Tc) | 10V | 180mOhm @ 8.5A, 10V | Surface Mount | 4.8V @ 500µA | 8 nC @ 10 V | 650 V | ±20V | 598 pF @ 400 V | - | - | 3-PQFN (8x8) | - | 52W (Tc) | -55°C ~ 150°C (TJ) |
|
TP65H070LDG-TR650 V 25 A GAN FET Transphorm |
662 | - |
|
数据表 |
TP65H070L | 3-PowerDFN | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 25A (Tc) | 10V | 85mOhm @ 16A, 10V | Surface Mount | 4.8V @ 700µA | 9.3 nC @ 10 V | 650 V | ±20V | 600 pF @ 400 V | - | - | 3-PQFN (8x8) | - | 96W (Tc) | -55°C ~ 150°C (TJ) |
|
TPH3206LSGANFET N-CH 600V 17A PQFN Transphorm |
6,729 | - |
|
数据表 |
- | 3-PowerDFN | Tube | Obsolete | N-Channel | GaNFET (Gallium Nitride) | 17A (Tc) | 10V | 180mOhm @ 11A, 8V | Surface Mount | 2.6V @ 500µA | 9.3 nC @ 4.5 V | 600 V | ±18V | 760 pF @ 480 V | - | - | 3-PQFN (8x8) | - | 96W (Tc) | -55°C ~ 175°C (TJ) |
|
TP90H050WSGANFET N-CH 900V 34A TO247-3 Transphorm |
3,977 | - |
|
数据表 |
- | TO-247-3 | Tube | Obsolete | N-Channel | GaNFET (Cascode Gallium Nitride FET) | 34A (Tc) | 10V | 63mOhm @ 22A, 10V | Through Hole | 4.4V @ 700µA | 17.5 nC @ 10 V | 900 V | ±20V | 980 pF @ 600 V | - | - | TO-247-3 | - | 119W (Tc) | -55°C ~ 150°C |
