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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
TPH3205WSBQAGANFET N-CH 650V 35A TO247-3 Transphorm |
7,791 | - |
|
数据表 |
- | TO-247-3 | Tube | Obsolete | N-Channel | GaNFET (Gallium Nitride) | 35A (Tc) | 10V | 62mOhm @ 22A, 8V | Through Hole | 2.6V @ 700µA | 42 nC @ 8 V | 650 V | ±18V | 2200 pF @ 400 V | AEC-Q101 | - | TO-247-3 | Automotive | 125W (Tc) | -55°C ~ 150°C (TJ) |
|
TP65H050WSQAGANFET N-CH 650V 36A TO247-3 Transphorm |
21 | - |
|
数据表 |
- | TO-247-3 | Tube | Active | N-Channel | GaNFET (Cascode Gallium Nitride FET) | 36A (Tc) | 10V | 60mOhm @ 25A, 10V | Through Hole | 4.8V @ 700µA | 24 nC @ 10 V | 650 V | ±20V | 1000 pF @ 400 V | AEC-Q101 | - | TO-247-3 | Automotive | 150W (Tc) | -55°C ~ 175°C (TJ) |
|
TP65H035WSQAGANFET N-CH 650V 47.2A TO247-3 Transphorm |
60 | - |
|
数据表 |
- | TO-247-3 | Tube | Active | N-Channel | GaNFET (Cascode Gallium Nitride FET) | 47.2A (Tc) | 10V | 41mOhm @ 32A, 10V | Through Hole | 4.5V @ 1mA | 24 nC @ 10 V | 650 V | ±20V | 1500 pF @ 400 V | AEC-Q101 | - | TO-247-3 | Automotive | 187W (Tc) | -55°C ~ 175°C (TJ) |
|
TPH3208LDGGANFET N-CH 650V 20A 3PQFN Transphorm |
9 | - |
|
数据表 |
- | 3-PowerDFN | Tube | Obsolete | N-Channel | GaNFET (Gallium Nitride) | 20A (Tc) | 10V | 130mOhm @ 13A, 8V | Surface Mount | 2.6V @ 300µA | 14 nC @ 8 V | 650 V | ±18V | 760 pF @ 400 V | - | - | 3-PQFN (8x8) | - | 96W (Tc) | -55°C ~ 150°C (TJ) |
|
TPH3206PDGANFET N-CH 600V 17A TO220AB Transphorm |
16 | - |
|
数据表 |
- | TO-220-3 | Tube | Not For New Designs | N-Channel | GaNFET (Gallium Nitride) | 17A (Tc) | 10V | 180mOhm @ 11A, 8V | Through Hole | 2.6V @ 500µA | 9.3 nC @ 4.5 V | 600 V | ±18V | 760 pF @ 480 V | - | - | TO-220AB | - | 96W (Tc) | -55°C ~ 175°C (TJ) |
|
|
TPH3202PSGANFET N-CH 600V 9A TO220AB Transphorm |
4,635 | - |
|
数据表 |
- | TO-220-3 | Tube | Obsolete | N-Channel | GaNFET (Gallium Nitride) | 9A (Tc) | 10V | 350mOhm @ 5.5A, 8V | Through Hole | 2.5V @ 250µA | 9.3 nC @ 4.5 V | 600 V | ±18V | 760 pF @ 480 V | - | - | TO-220AB | - | 65W (Tc) | -55°C ~ 175°C (TJ) |
|
TPH3202LDGANFET N-CH 600V 9A 4PQFN Transphorm |
2,850 | - |
|
数据表 |
- | 4-PowerDFN | Tube | Obsolete | N-Channel | GaNFET (Gallium Nitride) | 9A (Tc) | 10V | 350mOhm @ 5.5A, 8V | Surface Mount | 2.5V @ 250µA | 9.3 nC @ 4.5 V | 600 V | ±18V | 760 pF @ 480 V | - | - | 4-PQFN (8x8) | - | 65W (Tc) | -55°C ~ 175°C (TJ) |
|
|
TPH3206LDGANFET N-CH 600V 17A PQFN Transphorm |
6,343 | - |
|
数据表 |
- | 4-PowerDFN | Tube | Obsolete | N-Channel | GaNFET (Gallium Nitride) | 17A (Tc) | 10V | 180mOhm @ 11A, 8V | Surface Mount | 2.6V @ 500µA | 9.3 nC @ 4.5 V | 600 V | ±18V | 760 pF @ 480 V | - | - | 4-PQFN (8x8) | - | 96W (Tc) | -55°C ~ 175°C (TJ) |
|
|
TPH3208PSGANFET N-CH 650V 20A TO220AB Transphorm |
5,167 | - |
|
数据表 |
- | TO-220-3 | Tube | Obsolete | N-Channel | GaNFET (Cascode Gallium Nitride FET) | 20A (Tc) | 10V | 130mOhm @ 13A, 8V | Through Hole | 2.6V @ 300µA | 14 nC @ 8 V | 650 V | ±18V | 760 pF @ 400 V | - | - | TO-220AB | - | 96W (Tc) | -55°C ~ 150°C (TJ) |
|
|
TPH3208LDGANFET N-CH 650V 20A 4PQFN Transphorm |
4,804 | - |
|
数据表 |
- | 4-PowerDFN | Tube | Obsolete | N-Channel | GaNFET (Gallium Nitride) | 20A (Tc) | 10V | 130mOhm @ 13A, 8V | Surface Mount | 2.6V @ 300µA | 14 nC @ 8 V | 650 V | ±18V | 760 pF @ 400 V | - | - | 4-PQFN (8x8) | - | 96W (Tc) | -55°C ~ 150°C (TJ) |
