Taiwan Semiconductor Corporation|场效应晶体管（FETs）、MOSFETs - 页 40

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
TSM60NB190CI 600V, 18A, SINGLE N-CHANNEL POWE Taiwan Semiconductor Corporation	6,884	-	询价单	数据表	-	TO-220-3 Full Pack, Isolated Tab	Tube	Active	N-Channel	MOSFET (Metal Oxide)	18A (Tc)	10V	190mOhm @ 6A, 10V	Through Hole	4V @ 250µA	31 nC @ 10 V	600 V	±30V	1273 pF @ 100 V	-	-	ITO-220	-	33.8W (Tc)	-55°C ~ 150°C (TJ)
TSM60N380CP ROG MOSFET N-CHANNEL 600V 11A TO252 Taiwan Semiconductor Corporation	7,546	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	11A (Tc)	10V	380mOhm @ 5.5A, 10V	Surface Mount	4V @ 250µA	20.5 nC @ 10 V	600 V	±30V	1040 pF @ 100 V	-	-	TO-252 (DPAK)	-	125W (Tc)	-55°C ~ 150°C (TJ)
TSM60NB190CM2 RNG MOSFET N-CH 600V 18A TO263 Taiwan Semiconductor Corporation	8,767	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	18A (Tc)	10V	190mOhm @ 6A, 10V	Surface Mount	4V @ 250µA	31 nC @ 10 V	600 V	±30V	1273 pF @ 100 V	-	-	TO-263 (D2PAK)	-	150.6W (Tc)	-55°C ~ 150°C (TJ)
TSM60NC165CI 600V, 24A, SINGLE N-CHANNEL POWE Taiwan Semiconductor Corporation	9,955	-	询价单	数据表	-	TO-220-3 Full Pack, Isolated Tab	Tube	Active	N-Channel	MOSFET (Metal Oxide)	24A (Tc)	10V	165mOhm @ 11.3A, 10V	Through Hole	5V @ 1mA	44 nC @ 10 V	600 V	±30V	1857 pF @ 300 V	-	-	ITO-220	-	89W (Tc)	-55°C ~ 150°C (TJ)
TSM190N08CZ 75V, 190A, SINGLE N-CHANNEL POWE Taiwan Semiconductor Corporation	3,726	-	询价单	数据表	-	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	17A (Ta), 190A (Tc)	10V	4.2mOhm @ 90A, 10V	Through Hole	4V @ 250µA	160 nC @ 10 V	75 V	±20V	8600 pF @ 30 V	-	-	TO-220	-	2W (Ta), 250W (Tc)	-55°C ~ 150°C (TJ)
TSM80N400CF 800V, 12A, SINGLE N-CHANNEL POWE Taiwan Semiconductor Corporation	2,663	-	询价单	数据表	-	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	12A (Tc)	10V	400mOhm @ 2.7A, 10V	Through Hole	4V @ 250µA	51 nC @ 10 V	800 V	±30V	1848 pF @ 100 V	-	-	ITO-220S	-	69W (Tc)	-55°C ~ 150°C (TJ)
TSM60NB150CF 600V, 24A, SINGLE N-CHANNEL POWE Taiwan Semiconductor Corporation	8,105	-	询价单	数据表	-	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	24A (Tc)	10V	150mOhm @ 4.3A, 10V	Through Hole	4V @ 250µA	43 nC @ 10 V	600 V	±30V	1765 pF @ 100 V	-	-	ITO-220S	-	62.5W (Tc)	-55°C ~ 150°C (TJ)
TSM60NB190CI C0G MOSFET N-CH 600V 18A ITO220AB Taiwan Semiconductor Corporation	4,806	-	询价单	数据表	-	TO-220-3 Full Pack, Isolated Tab	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	18A (Tc)	10V	190mOhm @ 6A, 10V	Through Hole	4V @ 250µA	31 nC @ 10 V	600 V	±30V	1273 pF @ 100 V	-	-	ITO-220AB	-	33.8W (Tc)	-55°C ~ 150°C (TJ)
TSM60NB150CF C0G MOSFET N-CH 600V 24A ITO220S Taiwan Semiconductor Corporation	15	-	询价单	数据表	-	TO-220-3 Full Pack	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	24A (Tc)	10V	150mOhm @ 4.3A, 10V	Through Hole	4V @ 250µA	43 nC @ 10 V	600 V	±30V	1765 pF @ 100 V	-	-	ITO-220S	-	62.5W (Tc)	-55°C ~ 150°C (TJ)
TSM043NH04CR RLG 40V, 54A, SINGLE N-CHANNEL POWER Taiwan Semiconductor Corporation	5,000	-	询价单	数据表	PerFET™	8-PowerTDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	20A (Ta), 54A (Tc)	7V, 10V	4.3mOhm @ 27A, 10V	Surface Mount, Wettable Flank	3.6V @ 250µA	37 nC @ 10 V	40 V	±20V	2531 pF @ 25 V	-	-	8-PDFNU (5x6)	-	100W (Tc)	-55°C ~ 175°C (TJ)

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