Taiwan Semiconductor Corporation|场效应晶体管（FETs）、MOSFETs - 页 39

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
TSM048NB06LCR RLG MOSFET N-CH 60V 16A/107A 8PDFN Taiwan Semiconductor Corporation	7,118	-	询价单	数据表	-	8-PowerLDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	16A (Ta), 107A (Tc)	4.5V, 10V	4.8mOhm @ 16A, 10V	Surface Mount	2.5V @ 250µA	105 nC @ 10 V	60 V	±20V	6253 pF @ 30 V	-	-	8-PDFN (5.2x5.75)	-	3.1W (Ta), 136W (Tc)	-55°C ~ 175°C (TJ)
TSM80N1R2CP ROG MOSFET N-CH 800V 5.5A TO252 Taiwan Semiconductor Corporation	6,253	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	5.5A (Tc)	10V	1.2Ohm @ 2.75A, 10V	Surface Mount	4V @ 250µA	19.4 nC @ 10 V	800 V	±30V	685 pF @ 100 V	-	-	TO-252 (DPAK)	-	110W (Tc)	-55°C ~ 150°C (TJ)
TSM60NB099CZ C0G MOSFET N-CHANNEL 600V 38A TO220 Taiwan Semiconductor Corporation	7,073	-	询价单	数据表	-	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	38A (Tc)	10V	99mOhm @ 11.3A, 10V	Through Hole	4V @ 250µA	62 nC @ 10 V	600 V	±30V	2587 pF @ 100 V	-	-	TO-220	-	298W (Tc)	-55°C ~ 150°C (TJ)
TSM301K12CQ RFG MOSFET P-CH 20V 4.5A 6TDFN Taiwan Semiconductor Corporation	5,627	-	询价单	数据表	-	6-VDFN Exposed Pad	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	4.5A (Ta)	1.8V, 4.5V	94mOhm @ 2.8A, 4.5V	Surface Mount	500mV @ 250µA (Min)	10 nC @ 5 V	20 V	±12V	5.2 pF @ 6 V	-	-	6-TDFN (2x2)	-	6.5W (Tc)	-55°C ~ 150°C (TJ)
TSM60NB190CZ 600V, 18A, SINGLE N-CHANNEL POWE Taiwan Semiconductor Corporation	9,432	-	询价单	数据表	-	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	18A (Tc)	10V	190mOhm @ 6A, 10V	Through Hole	4V @ 250µA	31 nC @ 10 V	600 V	±30V	1273 pF @ 100 V	-	-	TO-220	-	150.6W (Tc)	-55°C ~ 150°C (TJ)
TSM230N06PQ56 RLG MOSFET N-CH 60V 44A 8PDFN Taiwan Semiconductor Corporation	5,680	-	询价单	数据表	-	8-PowerTDFN	Tape & Reel (TR)	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	44A (Tc)	4.5V, 10V	23mOhm @ 20A, 10V	Surface Mount	2.5V @ 250µA	28 nC @ 10 V	60 V	±20V	1680 pF @ 20 V	-	-	8-PDFN (5x6)	-	83W (Tc)	-55°C ~ 150°C (TJ)
TSM80N950CP ROG MOSFET N-CHANNEL 800V 6A TO252 Taiwan Semiconductor Corporation	2,482	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	6A (Tc)	10V	950mOhm @ 3A, 10V	Surface Mount	4V @ 250µA	19.6 nC @ 10 V	800 V	±30V	691 pF @ 100 V	-	-	TO-252 (DPAK)	-	110W (Tc)	-55°C ~ 150°C (TJ)
TSM60NB260CI 600V, 13A, SINGLE N-CHANNEL POWE Taiwan Semiconductor Corporation	7,565	-	询价单	数据表	-	TO-220-3 Full Pack, Isolated Tab	Tube	Active	N-Channel	MOSFET (Metal Oxide)	13A (Tc)	10V	260mOhm @ 3.9A, 10V	Through Hole	4V @ 250µA	30 nC @ 10 V	600 V	±30V	1273 pF @ 100 V	-	-	ITO-220	-	32.1W (Tc)	-55°C ~ 150°C (TJ)
TSM60NC196CI 600V, 20A, SINGLE N-CHANNEL POWE Taiwan Semiconductor Corporation	4,336	-	询价单	数据表	-	TO-220-3 Full Pack, Isolated Tab	Tube	Active	N-Channel	MOSFET (Metal Oxide)	20A (Tc)	10V	196mOhm @ 9.5A, 10V	Through Hole	5V @ 1mA	39 nC @ 10 V	600 V	±30V	1535 pF @ 300 V	-	-	ITO-220	-	70W (Tc)	-55°C ~ 150°C (TJ)
TSM60NB190CM2 600V, 18A, SINGLE N-CHANNEL POWE Taiwan Semiconductor Corporation	8,292	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	18A (Tc)	10V	190mOhm @ 6A, 10V	Surface Mount	4V @ 250µA	31 nC @ 10 V	600 V	±30V	1273 pF @ 100 V	-	-	TO-263 (D2PAK)	-	150.6W (Tc)	-55°C ~ 150°C (TJ)

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