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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
TSM9ND50CI

TSM9ND50CI

MOSFET N-CH 500V 9A ITO220

Taiwan Semiconductor Corporation

3,869 -
TSM9ND50CI

数据表

- TO-220-3 Full Pack, Isolated Tab Tube Obsolete N-Channel MOSFET (Metal Oxide) 9A (Tc) 10V 900mOhm @ 2.3A, 10V Through Hole 3.8V @ 250µA 24.5 nC @ 10 V 500 V ±30V 1116 pF @ 50 V - - ITO-220 - 50W (Tc) -55°C ~ 150°C (TJ)
TSM60NB260CI C0G

TSM60NB260CI C0G

MOSFET N-CH 600V 13A ITO220AB

Taiwan Semiconductor Corporation

8,014 -
TSM60NB260CI C0G

数据表

- TO-220-3 Full Pack, Isolated Tab Tube Obsolete N-Channel MOSFET (Metal Oxide) 13A (Tc) 10V 260mOhm @ 3.9A, 10V Through Hole 4V @ 250µA 30 nC @ 10 V 600 V ±30V 1273 pF @ 100 V - - ITO-220AB - 32.1W (Tc) -55°C ~ 150°C (TJ)
TSM60N600CP ROG

TSM60N600CP ROG

MOSFET N-CHANNEL 600V 8A TO252

Taiwan Semiconductor Corporation

4,474 -
TSM60N600CP ROG

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Cut Tape (CT) Obsolete N-Channel MOSFET (Metal Oxide) 8A (Tc) 10V 600mOhm @ 4A, 10V Surface Mount 4V @ 250µA 13 nC @ 10 V 600 V ±30V 743 pF @ 100 V - - TO-252 (DPAK) - 83W (Tc) -55°C ~ 150°C (TJ)
TSM35N10CP ROG

TSM35N10CP ROG

MOSFET N-CHANNEL 100V 32A TO252

Taiwan Semiconductor Corporation

5,677 -
TSM35N10CP ROG

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 32A (Tc) 4.5V, 10V 37mOhm @ 10A, 10V Surface Mount 3V @ 250µA 34 nC @ 10 V 100 V ±20V 1598 pF @ 30 V - - TO-252 (DPAK) - 83.3W (Tc) -55°C ~ 150°C (TJ)
TSM3N80CP ROG

TSM3N80CP ROG

MOSFET N-CHANNEL 800V 3A TO252

Taiwan Semiconductor Corporation

7,088 -
TSM3N80CP ROG

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 3A (Tc) 10V 4.2Ohm @ 1.5A, 10V Surface Mount 4V @ 250µA 19 nC @ 10 V 800 V ±30V 696 pF @ 25 V - - TO-252 (DPAK) - 94W (Tc) -55°C ~ 150°C (TJ)
TSM089N08LCR

TSM089N08LCR

80V, 67A, SINGLE N-CHANNEL POWER

Taiwan Semiconductor Corporation

3,470 -
TSM089N08LCR

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 12A (Ta), 67A (Tc) 4.5V, 10V 8.9mOhm @ 12A, 10V Surface Mount 2.5V @ 250µA 90 nC @ 10 V 80 V ±20V 6119 pF @ 40 V - - 8-PDFN (5x6) - 2.6W (Ta), 83W (Tc) -55°C ~ 150°C (TJ)
TSM10ND60CI

TSM10ND60CI

600V, 10A, SINGLE N-CHANNEL POW

Taiwan Semiconductor Corporation

9,234 -
TSM10ND60CI

数据表

- TO-220-3 Full Pack, Isolated Tab Tube Active N-Channel MOSFET (Metal Oxide) 10A (Tc) 10V 600mOhm @ 3A, 10V Through Hole 3.8V @ 250µA 38 nC @ 10 V 600 V ±30V 1928 pF @ 50 V - - ITO-220 - 56.8W (Tc) -55°C ~ 150°C (TJ)
TSM10ND65CI

TSM10ND65CI

650V, 10A, SINGLE N-CHANNEL POW

Taiwan Semiconductor Corporation

7,916 -
TSM10ND65CI

数据表

- TO-220-3 Full Pack, Isolated Tab Tube Active N-Channel MOSFET (Metal Oxide) 10A (Tc) 10V 800mOhm @ 3A, 10V Through Hole 3.8V @ 250µA 39.6 nC @ 10 V 650 V ±30V 1863 pF @ 50 V - - ITO-220 - 56.8W (Tc) -55°C ~ 150°C (TJ)
TSM70N750CH

TSM70N750CH

700V, 6A, SINGLE N-CHANNEL POWER

Taiwan Semiconductor Corporation

5,593 -
TSM70N750CH

数据表

- TO-251-3 Short Leads, IPAK, TO-251AA Tube Active N-Channel MOSFET (Metal Oxide) 6A (Tc) 10V 750mOhm @ 1.8A, 10V Through Hole 4V @ 250µA 10.7 nC @ 10 V 700 V ±30V 555 pF @ 100 V - - TO-251 (IPAK) - 62.5W (Tc) -55°C ~ 150°C (TJ)
TSM70N750CP

TSM70N750CP

700V, 6A, SINGLE N-CHANNEL POWER

Taiwan Semiconductor Corporation

9,978 -
TSM70N750CP

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 6A (Tc) 10V 750mOhm @ 1.8A, 10V Surface Mount 4V @ 250µA 10.7 nC @ 10 V 700 V ±30V 555 pF @ 100 V - - TO-252 (DPAK) - 62.5W (Tc) -55°C ~ 150°C (TJ)
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