Taiwan Semiconductor Corporation|场效应晶体管（FETs）、MOSFETs - 页 33

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
TSM70N600CP 700V, 8A, SINGLE N-CHANNEL POWER Taiwan Semiconductor Corporation	4,035	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	8A (Tc)	10V	600mOhm @ 2.4A, 10V	Surface Mount	4V @ 250µA	12.6 nC @ 10 V	700 V	±30V	743 pF @ 100 V	-	-	TO-252 (DPAK)	-	83W (Tc)	-55°C ~ 150°C (TJ)
TSM70N600CH 700V, 8A, SINGLE N-CHANNEL POWER Taiwan Semiconductor Corporation	6,971	-	询价单	数据表	-	TO-251-3 Short Leads, IPAK, TO-251AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	8A (Tc)	10V	600mOhm @ 2.4A, 10V	Through Hole	4V @ 250µA	12.6 nC @ 10 V	700 V	±30V	743 pF @ 100 V	-	-	TO-251 (IPAK)	-	83W (Tc)	-55°C ~ 150°C (TJ)
TSM080N03EPQ56 RLG MOSFET N-CH 30V 55A 8PDFN Taiwan Semiconductor Corporation	4,057	-	询价单	数据表	-	8-PowerTDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	55A (Tc)	4.5V, 10V	8mOhm @ 16A, 10V	Surface Mount	2.5V @ 250µA	7.5 nC @ 4.5 V	30 V	±20V	750 pF @ 25 V	-	-	8-PDFN (5x6)	-	54W (Tc)	-55°C ~ 150°C (TJ)
TSM60N900CP ROG MOSFET N-CH 600V 4.5A TO252 Taiwan Semiconductor Corporation	9,165	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	4.5A (Tc)	10V	900mOhm @ 2.3A, 10V	Surface Mount	4V @ 250µA	9.7 nC @ 10 V	600 V	±30V	480 pF @ 100 V	-	-	TO-252 (DPAK)	-	50W (Tc)	-55°C ~ 150°C (TJ)
TSM70N900CP ROG MOSFET N-CH 700V 4.5A TO252 Taiwan Semiconductor Corporation	7,670	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	4.5A (Tc)	10V	900mOhm @ 1.5A, 10V	Surface Mount	4V @ 250µA	9.7 nC @ 10 V	700 V	±30V	482 pF @ 100 V	-	-	TO-252 (DPAK)	-	50W (Tc)	-55°C ~ 150°C (TJ)
TSM80N1R2CP 800V, 5.5A, SINGLE N-CHANNEL POW Taiwan Semiconductor Corporation	6,857	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	5.5A (Tc)	10V	1.2Ohm @ 2.75A, 10V	Surface Mount	4V @ 250µA	19.4 nC @ 10 V	800 V	±30V	685 pF @ 100 V	-	-	TO-252 (DPAK)	-	110W (Tc)	-55°C ~ 150°C (TJ)
TSM80N1R2CH 800V, 5.5A, SINGLE N-CHANNEL POW Taiwan Semiconductor Corporation	4,923	-	询价单	数据表	-	TO-251-3 Short Leads, IPAK, TO-251AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	5.5A (Tc)	10V	1.2Ohm @ 2.75A, 10V	Through Hole	4V @ 250µA	19.4 nC @ 10 V	800 V	±30V	685 pF @ 100 V	-	-	TO-251 (IPAK)	-	110W (Tc)	-55°C ~ 150°C (TJ)
TSM80N400CF C0G MOSFET N-CH 800V 12A ITO220S Taiwan Semiconductor Corporation	6,240	-	询价单	数据表	-	TO-220-3 Full Pack	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	12A (Tc)	10V	400mOhm @ 2.7A, 10V	Through Hole	4V @ 250µA	51 nC @ 10 V	800 V	±30V	1848 pF @ 100 V	-	-	ITO-220S	-	69W (Tc)	-55°C ~ 150°C (TJ)
TSM80N950CP 800V, 6A, SINGLE N-CHANNEL POWER Taiwan Semiconductor Corporation	7,221	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	6A (Tc)	10V	950mOhm @ 3A, 10V	Surface Mount	4V @ 250µA	19.6 nC @ 10 V	800 V	±30V	691 pF @ 100 V	-	-	TO-252 (DPAK)	-	110W (Tc)	-55°C ~ 150°C (TJ)
TSM80N950CH 800V, 6A, SINGLE N-CHANNEL POWER Taiwan Semiconductor Corporation	4,807	-	询价单	数据表	-	TO-251-3 Short Leads, IPAK, TO-251AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	6A (Tc)	10V	950mOhm @ 3A, 10V	Through Hole	4V @ 250µA	19.6 nC @ 10 V	800 V	±30V	691 pF @ 100 V	-	-	TO-251 (IPAK)	-	110W (Tc)	-55°C ~ 150°C (TJ)

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