SMC Diode Solutions|场效应晶体管（FETs）、MOSFETs - 页 3

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
S3M0025120K MOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions	240	-	询价单	数据表	-	TO-247-4	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	77A (Tc)	18V	32mOhm @ 48A, 18V	Through Hole	4V @ 20mA	175 nC @ 18 V	1200 V	+22V, -8V	3519 pF @ 1000 V	-	-	TO-247-4	-	517W (Tc)	-55°C ~ 175°C (TJ)
S2M0016120D-1 MOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions	300	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	140A (Tc)	18V, 20V	23mOhm @ 75A, 20V	Through Hole	3.6V @ 23mA	285 nC @ 20 V	1200 V	+20V, -5V	4540 pF @ 1000 V	-	-	TO-247AD	-	517W (Tc)	-55°C ~ 175°C (TJ)
S2M0016120K-1 MOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions	147	-	询价单	数据表	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	140A (Tc)	18V, 20V	23mOhm @ 75A, 20V	Through Hole	3.6V @ 23mA	285 nC @ 20 V	1200 V	+20V, -5V	4540 pF @ 1000 V	-	-	TO-247-4	-	517W (Tc)	-55°C ~ 175°C (TJ)
S3M0016120B MOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions	300	-	询价单	数据表	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	106A (Tc)	18V	23mOhm @ 75A, 18V	Surface Mount	4V @ 30mA	287 nC @ 18 V	1200 V	+22V, -8V	5251 pF @ 1000 V	-	-	TO-263-7	-	576W (Tc)	-55°C ~ 175°C (TJ)
S2M0160120T MOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions	300	-	询价单	数据表	-	-	Tape & Reel (TR)	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
S2M0120120T MOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions	300	-	询价单	数据表	-	-	Tape & Reel (TR)	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
S2M0080120T MOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions	300	-	询价单	数据表	-	-	Tape & Reel (TR)	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
S3M0040120T MOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions	250	-	询价单	数据表	-	8-PowerSFN	Tape & Reel (TR)	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	65A (Tc)	18V	52mOhm @ 40A, 18V	Surface Mount	4V @ 16mA	143 nC @ 18 V	1200 V	+20V, -8V	2844 pF @ 1000 V	-	-	TOLL	-	130W (Tc)	-55°C ~ 175°C (TJ)
S2M0040120J-1 MOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions	510	-	询价单	数据表	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	55A (Tj)	20V	52mOhm @ 40A, 20V	Surface Mount	4V @ 10mA	92.1 nC @ 20 V	1200 V	+20V, -5V	1904 pF @ 1000 V	-	-	TO-263-7	-	348W (Tc)	-55°C ~ 175°C (TJ)
S3M0025120T MOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions	200	-	询价单	数据表	-	8-PowerSFN	Tape & Reel (TR)	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	77A (Tc)	18V	32mOhm @ 48A, 18V	Surface Mount	4V @ 20mA	175 nC @ 18 V	1200 V	+22V, -8V	3519 pF @ 1000 V	-	-	TOLL	-	517W (Tc)	-55°C ~ 175°C (TJ)

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