SMC Diode Solutions|场效应晶体管（FETs）、MOSFETs - 页 2

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
S2M0120120D MOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions	264	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	21A (Tc)	20V	150mOhm @ 13.3A, 20V	Through Hole	4V @ 3.3mA	29.6 nC @ 20 V	1200 V	+20V, -5V	652 pF @ 1000 V	-	-	TO-247AD	-	156W (Tc)	-55°C ~ 175°C (TJ)
S2M0120120K MOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions	295	-	询价单	数据表	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	21A (Tc)	20V	150mOhm @ 13.3A, 20V	Through Hole	4V @ 3.3mA	29.6 nC @ 20 V	1200 V	+20V, -5V	652 pF @ 1000 V	-	-	TO-247-4	-	156W (Tc)	-55°C ~ 175°C (TJ)
S2M0160120J MOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions	300	-	询价单	数据表	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	16A (Tc)	20V	196mOhm @ 10A, 20V	Surface Mount	4V @ 2.5mA	26.5 nC @ 20 V	1200 V	+20V, -5V	513 pF @ 1000 V	-	-	TO-263-7	-	122W (Tc)	-55°C ~ 175°C (TJ)
S2M0120120J MOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions	327	-	询价单	数据表	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	21A (Tc)	20V	150mOhm @ 13.3A, 20V	Surface Mount	4V @ 3.3mA	29.6 nC @ 20 V	1200 V	+20V, -5V	652 pF @ 1000 V	-	-	TO-263-7	-	153W (Tc)	-55°C ~ 175°C (TJ)
S2M0080120J MOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions	230	-	询价单	数据表	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	37A (Tj)	20V	100mOhm @ 20A, 20V	Surface Mount	4V @ 10mA	54 nC @ 20 V	1200 V	+20V, -5V	1324 pF @ 1000 V	-	-	TO-263-7	-	234W (Tc)	-55°C ~ 175°C (TJ)
S2M0040120D-1 MOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions	299	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	55A (Tj)	20V	52mOhm @ 40A, 20V	Through Hole	4V @ 10mA	92.1 nC @ 20 V	1200 V	+20V, -5V	1904 pF @ 1000 V	-	-	TO-247AD	-	348W (Tc)	-55°C ~ 175°C (TJ)
S3M0040120D MOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions	300	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	65A (Tc)	18V	52mOhm @ 40A, 18V	Through Hole	4V @ 16mA	143 nC @ 18 V	1200 V	+20V, -8V	2844 pF @ 1000 V	-	-	TO-247AD	-	130W (Tc)	-55°C ~ 175°C (TJ)
S2M0040120K-1 MOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions	300	-	询价单	数据表	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	55A (Tj)	20V	52mOhm @ 40A, 20V	Through Hole	4V @ 10mA	92.1 nC @ 20 V	1200 V	+20V, -5V	1904 pF @ 1000 V	-	-	TO-247-4	-	348W (Tc)	-55°C ~ 175°C (TJ)
S3M0040120K MOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions	300	-	询价单	数据表	-	TO-247-4	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	65A (Tc)	18V	52mOhm @ 40A, 18V	Through Hole	4V @ 16mA	143 nC @ 18 V	1200 V	+22V, -8V	2844 pF @ 1000 V	-	-	TO-247-4	-	130W (Tc)	-55°C ~ 175°C (TJ)
S3M0040120J MOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions	300	-	询价单	数据表	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	76A (Tc)	18V	52mOhm @ 40A, 18V	Surface Mount	4V @ 16mA	143 nC @ 18 V	1200 V	+20V, -8V	2844 pF @ 1000 V	-	-	TO-263-7	-	600W (Tc)	-55°C ~ 175°C (TJ)

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