SMC Diode Solutions|场效应晶体管（FETs）、MOSFETs - 页 1

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
S2M0080120D MOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions	211	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	41A (Tc)	20V	100mOhm @ 20A, 20V	Through Hole	4V @ 10mA	54 nC @ 20 V	1200 V	+25V, -10V	1324 pF @ 1000 V	-	-	TO-247AD	-	231W (Tc)	-55°C ~ 175°C (TJ)
S2M0080120K MOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions	260	-	询价单	数据表	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	41A (Tc)	20V	100mOhm @ 20A, 20V	Through Hole	4V @ 10mA	54 nC @ 20 V	1200 V	+25V, -10V	1324 pF @ 1000 V	-	-	TO-247-4	-	231W (Tc)	-55°C ~ 175°C (TJ)
S2M0040120D MOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions	221	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	-	-	-	Through Hole	-	-	1200 V	-	-	-	-	TO-247-3	-	-	-
S2M0040120K MOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions	103	-	询价单	数据表	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	-	-	-	Through Hole	-	-	1200 V	-	-	-	-	TO-247-4	-	-	-
S2M0025120D MOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions	300	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	63A (Tj)	20V	34mOhm @ 50A, 20V	Through Hole	4V @ 15mA	130 nC @ 20 V	1200 V	+25V, -10V	4402 pF @ 1000 V	-	-	TO-247AD	-	446W (Tc)	-55°C ~ 175°C (TJ)
S2M0025120K MOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions	270	-	询价单	数据表	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	63A (Tc)	20V	34mOhm @ 50A, 20V	Through Hole	4V @ 15mA	130 nC @ 20 V	1200 V	+25V, -10V	4402 pF @ 1000 V	-	-	TO-247-4	-	446W (Tc)	-55°C ~ 175°C (TJ)
S1M1000170D MOSFET SILICON CARBIDE SIC 1700V SMC Diode Solutions	290	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	5.2A (Tc)	20V	1.3Ohm @ 2A, 20V	Through Hole	4V @ 500µA	10 nC @ 20 V	1700 V	+25V, -10V	160 pF @ 1000 V	-	-	TO-247AD	-	81W (Tc)	-55°C ~ 175°C (TJ)
S1M1000170K MOSFET SILICON CARBIDE SIC 1700V SMC Diode Solutions	300	-	询价单	数据表	-	TO-247-4	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	5.2A (Tc)	20V	1.3Ohm @ 2A, 20V	Through Hole	4V @ 500µA	10 nC @ 20 V	1700 V	+25V, -10V	160 pF @ 1000 V	-	-	TO-247-4	-	81W (Tc)	-55°C ~ 175°C (TJ)
S2M0160120D MOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions	285	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	17A (Tc)	20V	196mOhm @ 10A, 20V	Through Hole	4V @ 2.5mA	26.5 nC @ 20 V	1200 V	+20V, -5V	513 pF @ 1000 V	-	-	TO-247AD	-	130W (Tc)	-55°C ~ 175°C (TJ)
S2M0160120K MOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions	294	-	询价单	数据表	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	17A (Tc)	20V	196mOhm @ 10A, 20V	Through Hole	4V @ 2.5mA	26.5 nC @ 20 V	1200 V	+20V, -5V	513 pF @ 1000 V	-	-	TO-247-4	-	130W (Tc)	-55°C ~ 175°C (TJ)

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