富聪科技订单满¥1000免运费
关注我们:

场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

全部重置
全部应用
结果
图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
RS3E135BNGZETB

RS3E135BNGZETB

MOSFET N-CHANNEL 30V 9.5A 8SOP

Rohm Semiconductor

4,961 -
RS3E135BNGZETB

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 9.5A (Ta) 10V 14.6mOhm @ 9.5A, 10V Surface Mount 2.5V @ 1mA 8.3 nC @ 4.5 V 30 V ±20V 680 pF @ 15 V - - 8-SOP - 2W (Tc) -55°C ~ 150°C (TJ)
RQ6L020SPTCR

RQ6L020SPTCR

MOSFET P-CH 60V 2A TSMT6

Rohm Semiconductor

15,100 -
RQ6L020SPTCR

数据表

- SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 2A (Ta) 4V, 10V 210mOhm @ 2A, 10V Surface Mount 3V @ 1mA 7.2 nC @ 5 V 60 V ±20V 750 pF @ 10 V - - TSMT6 (SC-95) - 1.25W (Ta) 150°C (TJ)
RQ7G080BGTCR

RQ7G080BGTCR

NCH 40V 8A, TSMT8, POWER MOSFET

Rohm Semiconductor

5,756 -
RQ7G080BGTCR

数据表

- 8-SMD, Flat Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 8A (Ta) 4.5V, 10V 16.5mOhm @ 8A, 10V Surface Mount 2.5V @ 1mA 10.6 nC @ 10 V 40 V ±20V 530 pF @ 20 V - - TSMT8 - 1.1W (Ta) 150°C (TJ)
RW4E045AJTCL1

RW4E045AJTCL1

NCH 30V 4.5A POWER MOSFET: RW4E0

Rohm Semiconductor

1,919 -
RW4E045AJTCL1

数据表

- 6-PowerUFDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 4.5A (Ta) 2.5V, 4.5V 40mOhm @ 4.5A, 4.5V Surface Mount 1.5V @ 1mA 4 nC @ 4.5 V 30 V ±12V 450 pF @ 15 V - - DFN1616-7T - 1.5W (Ta) 150°C (TJ)
RD3L080SNTL1

RD3L080SNTL1

MOSFET N-CH 60V 8A TO252

Rohm Semiconductor

3,719 -
RD3L080SNTL1

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 8A (Ta) 4V, 10V 80mOhm @ 8A, 10V Surface Mount 2.5V @ 1mA 9.4 nC @ 10 V 60 V ±20V 380 pF @ 10 V - - TO-252 - 15W (Tc) -55°C ~ 150°C (TJ)
R6002END3TL1

R6002END3TL1

MOSFET N-CH 600V 1.7A TO252

Rohm Semiconductor

2,063 -
R6002END3TL1

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 1.7A (Tc) 10V 3.4Ohm @ 500mA, 10V Surface Mount 4V @ 1mA 6.5 nC @ 10 V 600 V ±20V 65 pF @ 25 V - - TO-252 - 26W (Tc) -55°C ~ 150°C (TJ)
RCX081N20

RCX081N20

MOSFET N-CH 200V 8A TO220FM

Rohm Semiconductor

463 -
RCX081N20

数据表

- TO-220-3 Full Pack Bulk Active N-Channel MOSFET (Metal Oxide) 8A (Tc) 10V 770mOhm @ 4A, 10V Through Hole 5.25V @ 1mA 8.5 nC @ 10 V 200 V ±30V 330 pF @ 25 V - - TO-220FM - 2.23W (Ta), 40W (Tc) 150°C (TJ)
RW4E075AJTCL1

RW4E075AJTCL1

NCH 30V 7.5A POWER MOSFET: RW4E0

Rohm Semiconductor

11,168 -
RW4E075AJTCL1

数据表

- 6-PowerUFDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 7.5A (Ta) 2.5V, 4.5V 26mOhm @ 7.5A, 4.5V Surface Mount 1.5V @ 2mA 6.3 nC @ 4.5 V 30 V ±12V 720 pF @ 15 V - - DFN1616-7T - 1.5W (Ta) 150°C (TJ)
RD3H045SPTL1

RD3H045SPTL1

MOSFET P-CH 45V 4.5A TO252

Rohm Semiconductor

3,879 -
RD3H045SPTL1

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 4.5A (Ta) 4V, 10V 155mOhm @ 4.5A, 10V Surface Mount 3V @ 1mA 12 nC @ 5 V 45 V ±20V 550 pF @ 10 V - - TO-252 - 15W (Tc) -55°C ~ 150°C (TJ)
R6002ENHTB1

R6002ENHTB1

600V 1.7A SOP8, LOW-NOISE POWER

Rohm Semiconductor

1,870 -
R6002ENHTB1

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 1.7A (Ta) 10V 3.4Ohm @ 500mA, 10V Surface Mount 4V @ 1mA 6.5 nC @ 10 V 600 V ±20V 65 pF @ 25 V - - 8-SOP - 2W (Ta) 150°C (TJ)
共 1014 条记录«上一页1... 4243444546474849...102下一页»
富聪科技

搜索

富聪科技

产品

富聪科技

电话

富聪科技

用户